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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, ED, LQE 2022-11-25
14:50		 Aichi Winc Aichi (Aichi Industry & Labor Center)
(Primary: On-site, Secondary: Online)		 Development of Semiconductor Incoherent Light Source for Forward Raman Amplifier
Junji Yoshida (Furukawa Electric), Naoya Hojo (FFOD), Yasuto Tatamida, Tomohiro Ohisi, Shigehiro Takasaka, Takuya Kokawa, Satoru Ichihara, Ryuichi Sugisaki, Toshio Kimura (Furukawa Electric) ED2022-48 CPM2022-73 LQE2022-81		 A semiconductor incoherent light source (iPump) for a forward Raman amplifier with 250 mW fiber output is developed. Fo... [more] ED2022-48 CPM2022-73 LQE2022-81
pp.107-110
MW, ED 2011-01-14
11:00		 Tokyo Kikai-Shinko-Kaikan Bldg. AlGaN/GaN HFETs using highly C-doped layers on Si substrate
Takuya Kokawa, Syusuke Kaya, Nariaki Ikeda, Sadahiro Kato (APD) ED2010-185 MW2010-145		 In this paper, AlGaN/GaN/HFET devices on Si substrates were fabricated, and the device characteristics were examined. In... [more] ED2010-185 MW2010-145
pp.55-59
ED 2008-10-23
13:50		 Fukuoka Kyushu Institute of Technology High-power AlGaN/GaN HFETs on 4-inch Si substrates
Nariaki Ikeda, Syuusuke Kaya, Jiang Li, Takuya Kokawa, Yoshihiro Sato, Sadahiro Kato (Furukawa Electric) ED2008-148		  [more] ED2008-148
pp.139-142
LQE, ED, CPM 2005-10-14
13:00		 Shiga Ritsumeikan Univ. Liquid sensor using gateless AlGaN/GaN HEMT structure
Takuya Kokawa, Takeshi Kimura, Taketomo Sato, Seiya Kasai, Hideki Hasegawa, Tamotsu Hashizume (Hokkaido Univ.) 		 [more] ED2005-147 CPM2005-134 LQE2005-74
pp.39-42
 Results 1 - 4 of 4  /   
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