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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, LQE, ED 2016-12-13
10:55		 Kyoto Kyoto University Development of Highly Effective Deep-Ultraviolet Light-Emitting Diode by using Transparent p-AlGaN Contact Layer
Takuya Mino (Panasonic), Hideki Hirayama (RIKEN), Takayoshi Takano, Koji Goto, Mitsuhiko Ueda, Kenji Tsubaki (Panasonic) ED2016-72 CPM2016-105 LQE2016-88		 AlGaN-based deep-ultraviolet (DUV) light emitting diodes (LEDs) with emission wavelength of 270 - 280 nm have been attra... [more] ED2016-72 CPM2016-105 LQE2016-88
pp.75-78
CPM, LQE, ED 2013-11-29
13:30		 Osaka   Development of Highly-Uniform 270-nm Deep-Ultraviolet Light-Emitting Diodes
Takuya Mino (Riken/Panasonic), Hideki Hirayama (Riken), Norimichi Noguchi, Takayoshi Takano, Kenji Tsubaki (Riken/Panasonic) ED2013-82 CPM2013-141 LQE2013-117		 High-quality AlN templates were successfully fabricated on sapphire substrates by using a 2-inchx3 metallorganic vapor p... [more] ED2013-82 CPM2013-141 LQE2013-117
pp.83-86
LQE, ED, CPM 2011-11-18
12:45		 Kyoto Katsura Hall，Kyoto Univ. Development of 260-nm AlGaN-based deep-ultraviolet light-emitting diodes using 2inchx3 MOVPE system
Takuya Mino (RIKEN/PEW), Hideki Hirayama (RIKEN), Takayoshi Takano, Norimichi Noguchi, Kenji Tsubaki (RIKEN/PEW) ED2011-93 CPM2011-142 LQE2011-116		 We have developed highly-uniform 260-nm-band AlGaN-based DUV LEDs fabricated on AlN templates on (0001) sapphire using a... [more] ED2011-93 CPM2011-142 LQE2011-116
pp.103-106
LQE, ED, CPM 2011-11-18
13:35		 Kyoto Katsura Hall，Kyoto Univ. Realization of 256 nm AlGaN-based deep-ultraviolet light-emitting diodes on Si substrates using epitaxial lateral overgrowth AlN templates
Takuya Mino (RIKEN/PEW), Hideki Hirayama (RIKEN), Takayoshi Takano, Kenji Tsubaki (RIKEN/PEW), Masakazu Sugiyama (Tokyo Univ.) ED2011-95 CPM2011-144 LQE2011-118		 We demonstrated 256-278 nm AlGaN-based deep-ultraviolet (DUV) light-emitting diodes (LEDs) on Si substrates by using epi... [more] ED2011-95 CPM2011-144 LQE2011-118
pp.113-116
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