| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| SDM, ICD, ITE-IST [detail] |
2023-08-02
13:15 |
Hokkaido |
Hokkaido Univ. Multimedia Education Bldg. 3F
(Primary: On-site, Secondary: Online) |
[Invited Talk]
A Nanosheet Oxide Semiconductor FET Using ALD InGaOx Channel and InSnOx Electrode for 3D Integrated Devices
Masaharu Kobayashi, Kaito Hikake, Zhuo Li, Junxiang Hao, Chitra Pandy, Takuya Saraya, Toshiro Hiramoto (Univ. Tokyo), Takanori Takahashi, Mutsunori Uenuma, Yukiharu Uraoka (NAIST)  SDM2023-45 ICD2023-24 |
(To be available after the conference date) [more] |
SDM2023-45 ICD2023-24
pp.45-49 |
| SDM |
2021-11-11
10:00 |
Online |
Online |
[Invited Talk]
New Development of Silicon IGBT
-- Scaling IGBT and Double-Gate IGBT --
Toshiro Hiramoto, Takuya Saraya (UTokyo) SDM2021-53 |
A silicon IGBT (Insulated Gate Bipolar Transistors) still remains the main stream power transistor and is widely used in... [more] |
SDM2021-53
pp.1-6 |
| SDM |
2021-11-11
14:00 |
Online |
Online |
[Invited Talk]
Study on the efficient erase opeartion in ferroelectric HfO2 FeFET toward 3D vertical structure
Masaharu Kobayashi, Fei Mo, Jiawen Xiang, Xiaoran Mei, Yoshiki Sawabe, Takuya Saraya, Toshiro Hiramoto (Univ. Tokyo), Chun-Jung Su (TSRI), Vita Pi-Ho Hu (NTU) SDM2021-56 |
(To be available after the conference date) [more] |
SDM2021-56
pp.19-22 |
| SDM |
2021-11-11
16:15 |
Online |
Online |
A threshold voltage definition based on a standardized charge vs. voltage relationship
Kiyoshi Takeuchi, Tomoko Mizutani, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. Tokyo) SDM2021-58 |
Threshold voltage defined by a band bending of twice the substrate intrinsic-to-Fermi level difference has been widely a... [more] |
SDM2021-58
pp.29-32 |
| SDM |
2020-11-20
11:30 |
Online |
Online |
[Invited Talk]
Three-dimensional device simulation of Si IGBTs
-- Investigation of physical models and comparisons with measurements --
Naoyuki Shigyo, Masahiro Watanabe, Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa (Tokyo Tech), Akira Nakajima (AIST), Katsumi Satoh (Mitsubishi Electric), Tomoko Matsudai (Toshiba), Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (The Univ. of Tokyo), Hitoshi Wakabayashi, Iriya Muneta (Tokyo Tech), Shin-ichi Nishizawa (Kyushu Univ.), Kazuo Tsutsui (Tokyo Tech), Toshiro Hiramoto (The Univ. of Tokyo), Hiromichi Ohashi, Hiroshi Iwai (Tokyo Tech) SDM2020-30 |
[more] |
SDM2020-30
pp.36-40 |
| ICD, SDM, ITE-IST [detail] |
2020-08-07
11:25 |
Online |
Online |
Gate-all-around p-type poly-Si junctionless nanowire transistor with steep subthreshold slope
Min-Ju Ahn, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (IIS, Tokyo Univ.) SDM2020-9 ICD2020-9 |
In this work, GAA p-type junctionless nanowire transistor with BF2+ implanted poly-Si channel have been fabricated and e... [more] |
SDM2020-9 ICD2020-9
pp.41-46 |
VLD, DC, CPSY, RECONF, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC
(Joint) [detail] |
2019-11-15
14:15 |
Ehime |
Ehime Prefecture Gender Equality Center |
Triple-Layered Ring Oscillators and Image Sensors Developed by Direct Bonding of SOI Wafers
Masahide Goto (NHK), Yuki Honda (NHK-ES), Toshihisa Watabe, Kei Hagiwara, Masakazu Nanba, Yoshinori Iguchi (NHK), Takuya Saraya, Masaharu Kobayashi (Univ. of Tokyo), Eiji Higurashi (AIST), Hiroshi Toshiyoshi, Toshiro Hiramoto (Univ. of Tokyo) ICD2019-38 IE2019-44 |
We have studied on pixel-parallel three-dimensional (3D) integrated CMOS image sensors. We previously reported double-la... [more] |
ICD2019-38 IE2019-44
pp.45-49 |
| SDM |
2019-11-07
11:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Study on the scalability of ferroelectric HfO2 tunnel junction memory
Masaharu Kobayashi, Fei Mo, Yusaku Tagawa, Takuya Saraya, Toshiro Hiramoto (Univ. Tokyo) SDM2019-69 |
[more] |
SDM2019-69
pp.5-8 |
| SDM |
2019-11-08
13:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Three-dimensional accurate TCAD simulation of trench-gate Si-IGBTs
Masahiro Watanabe, Naoyuki Shigyo, Takuya Hoshii, Kazuyoshi Furukawa, Kuniyuki Kakushima (Tokyo Tech.), Katsumi Satoh (Mitsubishi Electric Corp.), Tomoko Matsudai (Toshiba Electronic Devices & Storage Corp.), Takuya Saraya, Toshihiko Takakura, Kazuo Itou, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (The University of Tokyo), Iriya Muneta, Hitoshi Wakabayashi (Tokyo Tech.), Akira Nakajima (AIST), Shin-ichi Nishizawa (Kyushu University, Kasuga), Kazuo Tsutsui (Tokyo Tech.), Toshiro Hiramoto (The University of Tokyo), Hiromichi Ohashi, Hiroshi Iwai (Tokyo Tech.) SDM2019-77 |
In this work, excellent agreement between 3D TCAD simulations and experimental current-voltage characteristics were obta... [more] |
SDM2019-77
pp.45-48 |
| SDM, ICD, ITE-IST [detail] |
2019-08-08
10:00 |
Hokkaido |
Hokkaido Univ., Graduate School /Faculty of Information Science and |
Application of Extreme Value Theory to Statistical Analyses of Worst Case SRAM Data Retention Voltage
Tomoko Mizutani, Kiyoshi Takeuchi, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) SDM2019-41 ICD2019-6 |
The extreme value theory was applied to the estimation of the maximum SRAM data retention voltage (DRV). It was found th... [more] |
SDM2019-41 ICD2019-6
pp.27-30 |
| SDM, ICD, ITE-IST [detail] |
2019-08-08
10:25 |
Hokkaido |
Hokkaido Univ., Graduate School /Faculty of Information Science and |
[Invited Lecture]
3300V Scaled IGBT Switched by 5V Gate Drive
Toshiro Hiramoto, Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (Univ. of Tokyo), Masanori Tsukuda (Green Electronics Research Inst.), Yohichiroh Numasawa (Meiji Univ,), Katsumi Satoh (Mitsubishi Electric Corp), Tomoko Matsudai (Toshiba Electronic Devices & Storage Corp.), Wataru Saito (Kyushu Univ.), Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Hitoshi Wakabayashi, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Inst. of Technology), Atsushi Ogura (Meiji Univ.), Shin-ichi Nishizawa (Kyushu Univ.), Ichiro Omura (Kyushu Inst. of Tech.), Hiromichi Ohashi (Tokyo Inst. of Tech.) SDM2019-42 ICD2019-7 |
[more] |
SDM2019-42 ICD2019-7
pp.31-34 |
| SDM, ICD, ITE-IST [detail] |
2019-08-09
09:30 |
Hokkaido |
Hokkaido Univ., Graduate School /Faculty of Information Science and |
[Invited Talk]
A study on a ferroelectric transistor memory with ultrathin IGZO channel
Masaharu Kobayashi, Fei Mo, Yusaku Tagawa, Chengji Jin, MinJu Ahn, Takuya Saraya, Toshiro Hiramoto (Univ. Tokyo) SDM2019-45 ICD2019-10 |
(To be available after the conference date) [more] |
SDM2019-45 ICD2019-10
pp.59-62 |
| SDM |
2019-01-29
11:00 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
The Relationship between Polarization Switching and Subthreshold Behavior in HfO2-based Ferroelectric and Anti-ferroelectric FET: An Experimental Study
Chengji Jin, Kyungmin Jang, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi (Univ. of Tokyo) SDM2018-84 |
We have experimentally studied and revealed the direct relationship between polarization switching and subthreshold char... [more] |
SDM2018-84
pp.13-16 |
| SDM |
2019-01-29
11:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Simulation study on Ferroelectric-HfO2 Tunnel Junction Memory Based on Non-equilibrium Green Function Method with Self-consistent Potential
Fei Mo, Yusaku Tagawa, Takuya Saraya, Toshiro Hiramoto, Masaharu Kobayashi (Univ. of Tokyo) SDM2018-85 |
[more] |
SDM2018-85
pp.17-20 |
| SDM |
2019-01-29
15:40 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
Demonstration of 1200V Scaled IGBTs Driven by 5V Gate Voltage with Superiorly Low Switching Loss
Takuya Saraya, Kazuo Itou, Toshihiko Takakura, Munetoshi Fukui, Shinichi Suzuki, Kiyoshi Takeuchi (Univ. of Tokyo), Masanori Tsukuda (GRIK), Yohichiroh Numasawa (Meiji Univ.), Katsumi Satoh (Mitsubishi Electric), Tomoko Matsudai, Wataru Saito (Toshiba Electronic Devices & Storage), Kuniyuki Kakushima, Takuya Hoshii, Kazuyoshi Furukawa, Masahiro Watanabe, Naoyuki Shigyo, Kazuo Tsutsui, Hiroshi Iwai (Tokyo Tech), Atsushi Ogura (Meiji Univ.), Shin-ichi Nishizawa (Kyushu Univ.), Ichiro Omura (Kyushu Inst. of Tech.), Hiromichi Ohashi (Tokyo Tech), Toshiro Hiramoto (Univ. of Tokyo) SDM2018-90 |
Functional trench-gated 1200V-10A class Si-IGBTs, designed based on the scaling concept, were fabricated, and 5V gate vo... [more] |
SDM2018-90
pp.39-44 |
VLD, DC, CPSY, RECONF, CPM, ICD, IE, IPSJ-SLDM, IPSJ-EMB, IPSJ-ARC
(Joint) [detail] |
2018-12-07
15:15 |
Hiroshima |
Satellite Campus Hiroshima |
Quarter Video Graphics Array Image Sensor with Linear and Wide-Dynamic-Range Output Developed by Pixel-Wise 3D Integration
Masahide Goto, Yuki Honda, Toshihisa Watabe, Kei Hagiwara, Masakazu Nanba, Yoshinori Iguchi (NHK), Takuya Saraya, Masaharu Kobayashi, Eiji Higurashi, Hiroshi Toshiyoshi, Toshiro Hiramoto (Univ. of Tokyo) CPM2018-97 ICD2018-58 IE2018-76 |
We report on pixel-parallel three-dimensional (3D) integrated CMOS image sensors. Photodiodes (PDs), pulse generation ci... [more] |
CPM2018-97 ICD2018-58 IE2018-76
pp.43-48 |
| SDM, ICD, ITE-IST [detail] |
2018-08-09
13:45 |
Hokkaido |
Hokkaido Univ., Graduate School of IST M Bldg., M151 |
Effect of multiple stress application in post-fabrication cell stability self-improvement in SRAM cell array
Tomoko Mizutani, Kiyoshi Takeuchi, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) SDM2018-49 ICD2018-36 |
A new version applying multiple stress of the post fabrication SRAM self-improvement technique, which improves SRAM cell... [more] |
SDM2018-49 ICD2018-36
pp.121-126 |
| SDM, ICD, ITE-IST [detail] |
2017-08-01
09:45 |
Hokkaido |
Hokkaido-Univ. Multimedia Education Bldg. |
Parallel Programming of Non-volatile Power-up States of SRAM
Tomoko Mizutani, Kiyoshi Takeuchi, Takuya Saraya (Univ. of Tokyo), Hirofumi Shinohara (Waseda Univ.), Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) SDM2017-38 ICD2017-26 |
A technique for using an ordinary SRAM array for programmable and readable non-volatile (NV) memory is proposed. Paralle... [more] |
SDM2017-38 ICD2017-26
pp.49-54 |
VLD, DC, CPSY, RECONF, CPM, ICD, IE
(Joint) [detail] |
2016-11-29
10:30 |
Osaka |
Ritsumeikan University, Osaka Ibaraki Campus |
[Invited Talk]
Development of Three-Dimensional Integrated CMOS Image Sensors with Pixel-Parallel Signal Processors by Using Direct Bonding of SOI Layers
Masahide Goto, Yuki Honda, Toshihisa Watabe, Kei Hagiwara, Masakazu Nanba, Yoshinori Iguchi (NHK), Takuya Saraya, Masaharu Kobayashi, Eiji Higurasgi, Hiroshi Toshiyoshi, Toshiro Hiramoto (Univ. Tokyo) CPM2016-79 ICD2016-40 IE2016-74 |
[more] |
CPM2016-79 ICD2016-40 IE2016-74
pp.17-21 |
| ICD, SDM, ITE-IST [detail] |
2016-08-03
15:05 |
Osaka |
Central Electric Club |
Increased Drain-Induced Variability and Within-Device Variability in Extremely Narrow Silicon Nanowire MOSFETs with Width down to 2nm
Tomoko Mizutani, Kiyoshi Takeuchi, Ryota Suzuki, Takuya Saraya, Masaharu Kobayashi, Toshiro Hiramoto (Univ. of Tokyo) SDM2016-67 ICD2016-35 |
The effects of drain voltage in threshold voltage variability in extremely narrow silicon nanowire (NW) channel FETs are... [more] |
SDM2016-67 ICD2016-35
pp.123-126 |
|