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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW, ED | 2021-01-29 13:00 |
Online | Online (Online) | DC Characteristics and MOS Interface properties of HfSiOx-gate AlGaN/GaN HEMTs Ryota Ochi (Hokkaido Univ.), Erika Maeda (SIT/NIMS), Toshihide Nabatame (NIMS), Koji Shiozaki (IMaSS), Tamotsu Hashizume (Hokkaido Univ/IMaSS)  ED2020-31 MW2020-84 |
GaN high-electron-mobility transistors (HEMTs) are very attractive for the fifth generation communication system. To bui... [more] | ED2020-31 MW2020-84 pp.22-25 |
| ED, MW | 2018-01-25 16:10 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Tokyo) | Improvement of Current Linearity in Inslated Gate AlGaN/GaN HEMT Shota Kaneki, Kenya Nishiguchi (Hokkaido Univ.), Siro Ozaki (Fujitsu Lab.), Tamotsu Hashizume (Hokkaido Univ.) ED2017-95 MW2017-164 |
[more] | ED2017-95 MW2017-164 pp.11-14 |
| SDM | 2017-11-09 15:40 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Tokyo) | [Invited Talk]
GaN MOS capacitance simulation considering deep traps Koichi Fukuda, Hidehiro Asai, Junichi Hattori, Mitsuaki Shimizu (AIST), Tamotsu Hashizume (Hokkaido Univ.) SDM2017-66 |
Transient mode device simulation is applied to obtain capacitances of GaN MOS capacitors including deep level traps, and... [more] | SDM2017-66 pp.27-32 |
| SDM | 2015-06-19 09:30 |
Aichi | VBL, Nagoya Univ. (Aichi) | [Invited Lecture]
Interface states characterization of Al2O3/AlGaN/GaN structures Zenji Yatabe, Tamotsu Hashizume (Hokkaido Univ.) SDM2015-38 |
To characterize interface properties of Al2O3-insulated gates on AlGaN/GaN structures with and without (w/o) ICP etching... [more] | SDM2015-38 pp.1-4 |
| LQE, ED, CPM | 2014-11-28 14:05 |
Osaka | (Osaka) | Surface charging effects in AlGaN/GaN HEMTs induced by off-stress bias Kenya Nishiguchi, Tamotsu Hashizume (Hokkaido Univ.) ED2014-92 CPM2014-149 LQE2014-120 |
[more] | ED2014-92 CPM2014-149 LQE2014-120 pp.91-95 |
| LQE, ED, CPM | 2014-11-28 16:00 |
Osaka | (Osaka) | Effects of thermal cleaning on surface of bulk GaN substrates Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Reina Miyagawa, Osamu Eryu (Nagoya Inst. Tech.), Tamotsu Hashizume (Hokkaido Univ.) ED2014-96 CPM2014-153 LQE2014-124 |
Thermal cleaning at high temperature from 800 oC to 1100 oC of free-standing polar (0001) plane and non-polar (10-10) (2... [more] | ED2014-96 CPM2014-153 LQE2014-124 pp.111-115 |
| ED, LQE, CPM | 2012-11-29 15:25 |
Osaka | Osaka City University (Osaka) | Effects of process conditions on AlGaN/GaN hetero-MOS structures Yujin Hori, Zenji Yatabe, Wan-Cheng Ma, Tamotsu Hashizume (Hokkaido Univ.) ED2012-74 CPM2012-131 LQE2012-102 |
We have characterized effects of process conditions on Al2O3/AlGaN/GaN hetero-MOS structures prepared by atomic layer de... [more] | ED2012-74 CPM2012-131 LQE2012-102 pp.37-40 |
| ED | 2012-07-26 15:00 |
Fukui | Fukui University (Fukui) | Interface characterization of AlInN/GaN heterostructures Tamotsu Hashizume, Yujin Hori, Masamichi Akazawa (Hokkaido Univ.) ED2012-44 |
[more] | ED2012-44 pp.17-20 |
| SDM, ED (Workshop) |
2012-06-29 11:00 |
Okinawa | Okinawa Seinen-kaikan (Okinawa) | Improved current stability in multi-mesa-channel AlGaN/GaN HEMTs Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) |
We have proposed and characterized a multi-mesa-channel (MMC) AlGaN/GaN HEMT. By forming a periodic trench only under th... [more] | |
| ED, SDM, CPM | 2012-05-18 09:25 |
Aichi | VBL, Toyohashi Univ. of Technol. (Aichi) | Interface characterization of GaN-based MOS heterostructures employing ICP-etched AlGaN surfaces Zenji Yatabe, Yujin Hori, Sungsik Kim, Tamotsu Hashizume (Hokkaido Univ.) ED2012-27 CPM2012-11 SDM2012-29 |
Our aim is to investigate the effects of dry etching of AlGaN surface on interface properties of GaN-based MOS structure... [more] | ED2012-27 CPM2012-11 SDM2012-29 pp.49-52 |
| ED, MW | 2012-01-12 14:05 |
Tokyo | Kikai-Shinko-Kaikan Bldg (Tokyo) | Effect of surface treatments on insulated gates fabricated on GaN and AlGaN/GaN structures Yujin Hori, Sungsik Kim (Hokkaido Univ.), Tamotsu Hashizume (Hokkaido Univ./JST) ED2011-136 MW2011-159 |
[more] | ED2011-136 MW2011-159 pp.97-100 |
| LQE, ED, CPM | 2011-11-17 13:20 |
Kyoto | Katsura Hall，Kyoto Univ. (Kyoto) | Interface characterization of MOS structures fabricated on dry-etched GaN and AlGaN Sungsik Kim, Yujin Hori, Zenji Yatabe, Tamotsu Hashizume (Hokkaido Univ.) ED2011-78 CPM2011-127 LQE2011-101 |
We have investigated impacts of dry etching of GaN and AlGaN surfaces on interface properties of GaN-based MOS structure... [more] | ED2011-78 CPM2011-127 LQE2011-101 pp.25-28 |
| ED | 2011-07-29 14:45 |
Niigata | Multimedia system center, Nagaoka Univ. of Tech. (Niigata) | Characterization of MOS interfaces and current collapse in AlGaN/GaN HEMTs Tamotsu Hashizume, Chihoko Mizue, Yujin Hori, Masafumi Tajima, Kota Ohi (Hokkaido Univ.) ED2011-40 |
[more] | ED2011-40 pp.17-20 |
| MW, ED | 2011-01-14 09:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Tokyo) | Current collapse characterization of AlGaN/GaN HEMTs using by dual-gate structure Masafumi Tajima, Tamotsu Hashizume (Hokkaido Univ.) ED2010-182 MW2010-142 |
By using a dual-gate structure, we have investigated impact of gate-stress position on the current collapse behavior of ... [more] | ED2010-182 MW2010-142 pp.41-44 |
| CPM, LQE, ED | 2010-11-11 16:25 |
Osaka | (Osaka) | Current control of AlGaN/GaN HEMT with multi-mesa nanochannels Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) ED2010-152 CPM2010-118 LQE2010-108 |
We proposed and characterized a multi-mesa-channel (MMC) AlGaN/GaN HEMT. By forming a periodic trench, the MMC HEMT has ... [more] | ED2010-152 CPM2010-118 LQE2010-108 pp.47-50 |
| CPM, LQE, ED | 2010-11-12 10:00 |
Osaka | (Osaka) | Characterization of insulated gates on GaN and AlGaN/GaN structures Yujin Hori, Naohisa Harada, Chihoko Mizue, Tamotsu Hashizume (Hokkaido Univ.) ED2010-154 CPM2010-120 LQE2010-110 |
We investigated the interface and electrical properties of insulated gates fabricated on GaN and AlGaN/GaN structures us... [more] | ED2010-154 CPM2010-120 LQE2010-110 pp.55-58 |
| ED, SDM | 2010-06-30 16:00 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus (Tokyo) | Electrochemical formation of InP porous structures for their application to photoelectric conversion devices Hiroyuki Okazaki, Taketomo Sato, Naoki Yoshizawa, Tamotsu Hashizume (Hokkaido Univ) ED2010-71 SDM2010-72 |
[more] | ED2010-71 SDM2010-72 pp.85-89 |
| ED, SDM | 2010-07-02 10:50 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus (Tokyo) | Characterization of deep electron levels of AlGaN grown by MOVPE Kimihito Ooyama (Hokkaido Univ./SMM), Katsuya Sugawara (Hokkaido Univ.), Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Tamotsu Hashizume (Hokkaido Univ./JST) ED2010-107 SDM2010-108 |
Deep electronic levels of Al_xGa_{1-x}N (0.25 <x < 0.60) were investigated by using deep level transient spectroscopy (D... [more] | ED2010-107 SDM2010-108 pp.249-252 |
| ED, SDM | 2010-07-02 11:05 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus (Tokyo) | Characteristics of GaN p-n diode with damage layer induced by ICP plasma process Tsutomu Uesugi, Tetsu Kachi (Toyota Central R&D Labs.), Tamotsu Hashizume (Hokkaido Univ.) ED2010-108 SDM2010-109 |
[more] | ED2010-108 SDM2010-109 pp.253-256 |
| ED | 2010-06-17 13:50 |
Ishikawa | JAIST (Ishikawa) | Electrochemical Formation of InP Porous Structures and Their Application to High-Sensitive Chemical Sensors Taketomo Sato, Naoki Yoshizawa, Hiroyuki Okazaki, Tamotsu Hashizume (Hokkaido Univ.) ED2010-35 |
(To be available after the conference date) [more] | ED2010-35 pp.11-15 |
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