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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 56  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2021-01-29
Online Online DC Characteristics and MOS Interface properties of HfSiOx-gate AlGaN/GaN HEMTs
Ryota Ochi (Hokkaido Univ.), Erika Maeda (SIT/NIMS), Toshihide Nabatame (NIMS), Koji Shiozaki (IMaSS), Tamotsu Hashizume (Hokkaido Univ/IMaSS) ED2020-31 MW2020-84
GaN high-electron-mobility transistors (HEMTs) are very attractive for the fifth generation communication system. To bui... [more] ED2020-31 MW2020-84
ED, MW 2018-01-25
Tokyo Kikai-Shinko-Kaikan Bldg. Improvement of Current Linearity in Inslated Gate AlGaN/GaN HEMT
Shota Kaneki, Kenya Nishiguchi (Hokkaido Univ.), Siro Ozaki (Fujitsu Lab.), Tamotsu Hashizume (Hokkaido Univ.) ED2017-95 MW2017-164
 [more] ED2017-95 MW2017-164
SDM 2017-11-09
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] GaN MOS capacitance simulation considering deep traps
Koichi Fukuda, Hidehiro Asai, Junichi Hattori, Mitsuaki Shimizu (AIST), Tamotsu Hashizume (Hokkaido Univ.) SDM2017-66
Transient mode device simulation is applied to obtain capacitances of GaN MOS capacitors including deep level traps, and... [more] SDM2017-66
SDM 2015-06-19
Aichi VBL, Nagoya Univ. [Invited Lecture] Interface states characterization of Al2O3/AlGaN/GaN structures
Zenji Yatabe, Tamotsu Hashizume (Hokkaido Univ.) SDM2015-38
To characterize interface properties of Al2O3-insulated gates on AlGaN/GaN structures with and without (w/o) ICP etching... [more] SDM2015-38
LQE, ED, CPM 2014-11-28
Osaka   Surface charging effects in AlGaN/GaN HEMTs induced by off-stress bias
Kenya Nishiguchi, Tamotsu Hashizume (Hokkaido Univ.) ED2014-92 CPM2014-149 LQE2014-120
 [more] ED2014-92 CPM2014-149 LQE2014-120
LQE, ED, CPM 2014-11-28
Osaka   Effects of thermal cleaning on surface of bulk GaN substrates
Shunsuke Okada, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Reina Miyagawa, Osamu Eryu (Nagoya Inst. Tech.), Tamotsu Hashizume (Hokkaido Univ.) ED2014-96 CPM2014-153 LQE2014-124
Thermal cleaning at high temperature from 800 oC to 1100 oC of free-standing polar (0001) plane and non-polar (10-10) (2... [more] ED2014-96 CPM2014-153 LQE2014-124
ED, LQE, CPM 2012-11-29
Osaka Osaka City University Effects of process conditions on AlGaN/GaN hetero-MOS structures
Yujin Hori, Zenji Yatabe, Wan-Cheng Ma, Tamotsu Hashizume (Hokkaido Univ.) ED2012-74 CPM2012-131 LQE2012-102
We have characterized effects of process conditions on Al2O3/AlGaN/GaN hetero-MOS structures prepared by atomic layer de... [more] ED2012-74 CPM2012-131 LQE2012-102
ED 2012-07-26
Fukui Fukui University Interface characterization of AlInN/GaN heterostructures
Tamotsu Hashizume, Yujin Hori, Masamichi Akazawa (Hokkaido Univ.) ED2012-44
 [more] ED2012-44
Okinawa Okinawa Seinen-kaikan Improved current stability in multi-mesa-channel AlGaN/GaN HEMTs
Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.)
We have proposed and characterized a multi-mesa-channel (MMC) AlGaN/GaN HEMT. By forming a periodic trench only under th... [more]
ED, SDM, CPM 2012-05-18
Aichi VBL, Toyohashi Univ. of Technol. Interface characterization of GaN-based MOS heterostructures employing ICP-etched AlGaN surfaces
Zenji Yatabe, Yujin Hori, Sungsik Kim, Tamotsu Hashizume (Hokkaido Univ.) ED2012-27 CPM2012-11 SDM2012-29
Our aim is to investigate the effects of dry etching of AlGaN surface on interface properties of GaN-based MOS structure... [more] ED2012-27 CPM2012-11 SDM2012-29
ED, MW 2012-01-12
Tokyo Kikai-Shinko-Kaikan Bldg Effect of surface treatments on insulated gates fabricated on GaN and AlGaN/GaN structures
Yujin Hori, Sungsik Kim (Hokkaido Univ.), Tamotsu Hashizume (Hokkaido Univ./JST) ED2011-136 MW2011-159
 [more] ED2011-136 MW2011-159
LQE, ED, CPM 2011-11-17
Kyoto Katsura Hall,Kyoto Univ. Interface characterization of MOS structures fabricated on dry-etched GaN and AlGaN
Sungsik Kim, Yujin Hori, Zenji Yatabe, Tamotsu Hashizume (Hokkaido Univ.) ED2011-78 CPM2011-127 LQE2011-101
We have investigated impacts of dry etching of GaN and AlGaN surfaces on interface properties of GaN-based MOS structure... [more] ED2011-78 CPM2011-127 LQE2011-101
ED 2011-07-29
Niigata Multimedia system center, Nagaoka Univ. of Tech. Characterization of MOS interfaces and current collapse in AlGaN/GaN HEMTs
Tamotsu Hashizume, Chihoko Mizue, Yujin Hori, Masafumi Tajima, Kota Ohi (Hokkaido Univ.) ED2011-40
 [more] ED2011-40
MW, ED 2011-01-14
Tokyo Kikai-Shinko-Kaikan Bldg. Current collapse characterization of AlGaN/GaN HEMTs using by dual-gate structure
Masafumi Tajima, Tamotsu Hashizume (Hokkaido Univ.) ED2010-182 MW2010-142
By using a dual-gate structure, we have investigated impact of gate-stress position on the current collapse behavior of ... [more] ED2010-182 MW2010-142
CPM, LQE, ED 2010-11-11
Osaka   Current control of AlGaN/GaN HEMT with multi-mesa nanochannels
Kota Ohi, Tamotsu Hashizume (Hokkaido Univ.) ED2010-152 CPM2010-118 LQE2010-108
We proposed and characterized a multi-mesa-channel (MMC) AlGaN/GaN HEMT. By forming a periodic trench, the MMC HEMT has ... [more] ED2010-152 CPM2010-118 LQE2010-108
CPM, LQE, ED 2010-11-12
Osaka   Characterization of insulated gates on GaN and AlGaN/GaN structures
Yujin Hori, Naohisa Harada, Chihoko Mizue, Tamotsu Hashizume (Hokkaido Univ.) ED2010-154 CPM2010-120 LQE2010-110
We investigated the interface and electrical properties of insulated gates fabricated on GaN and AlGaN/GaN structures us... [more] ED2010-154 CPM2010-120 LQE2010-110
ED, SDM 2010-06-30
Tokyo Tokyo Inst. of Tech. Ookayama Campus Electrochemical formation of InP porous structures for their application to photoelectric conversion devices
Hiroyuki Okazaki, Taketomo Sato, Naoki Yoshizawa, Tamotsu Hashizume (Hokkaido Univ) ED2010-71 SDM2010-72
 [more] ED2010-71 SDM2010-72
ED, SDM 2010-07-02
Tokyo Tokyo Inst. of Tech. Ookayama Campus Characterization of deep electron levels of AlGaN grown by MOVPE
Kimihito Ooyama (Hokkaido Univ./SMM), Katsuya Sugawara (Hokkaido Univ.), Hiroyuki Taketomi, Hideto Miyake, Kazumasa Hiramatsu (Mie Univ.), Tamotsu Hashizume (Hokkaido Univ./JST) ED2010-107 SDM2010-108
Deep electronic levels of Al_xGa_{1-x}N (0.25 <x < 0.60) were investigated by using deep level transient spectroscopy (D... [more] ED2010-107 SDM2010-108
ED, SDM 2010-07-02
Tokyo Tokyo Inst. of Tech. Ookayama Campus Characteristics of GaN p-n diode with damage layer induced by ICP plasma process
Tsutomu Uesugi, Tetsu Kachi (Toyota Central R&D Labs.), Tamotsu Hashizume (Hokkaido Univ.) ED2010-108 SDM2010-109
 [more] ED2010-108 SDM2010-109
ED 2010-06-17
Ishikawa JAIST Electrochemical Formation of InP Porous Structures and Their Application to High-Sensitive Chemical Sensors
Taketomo Sato, Naoki Yoshizawa, Hiroyuki Okazaki, Tamotsu Hashizume (Hokkaido Univ.) ED2010-35
(To be available after the conference date) [more] ED2010-35
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