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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
MW, OPE, EMT, MWP, EST, IEE-EMT [detail] |
2014-07-17 10:00 |
Hokkaido |
Muroran Inst. of Tech. |
C-Ku Band Ultra Broadband High Power Reactive Matching MMIC Amplifier using Broadband Interstage Matching Network Shuichi Sakata, Eigo Kuwata, Koji Yamanaka, Tasuku Kirikoshi, Hidetoshi Koyama, Yoshitaka Kamo, Hiroshi Fukumoto (Mitsubishi Electric) MW2014-53 OPE2014-22 EST2014-14 MWP2014-11 |
This paper reports on a Gallium Nitride High Electron Mobility Transistor (GaN HEMT) Monolithic Microwave Integrated Cir... [more] |
MW2014-53 OPE2014-22 EST2014-14 MWP2014-11 pp.1-5 |
OPE, MW, MWP, EMT, EST, IEE-EMT [detail] |
2011-07-22 11:25 |
Hokkaido |
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C-Ku band ultra broadband GaN MMIC amplifier with 20W output power Eigo Kuwata, Koji Yamanaka, Hidetoshi Koyama, Tasuku Kirikoshi, Masatoshi Nakayama, Yoshihito Hirano (Melco) MW2011-59 OPE2011-46 EST2011-45 MWP2011-27 |
[more] |
MW2011-59 OPE2011-46 EST2011-45 MWP2011-27 pp.119-123 |
MW |
2010-05-13 16:00 |
Hyogo |
University of Hyogo |
11W output power C-X band broadband high power balanced amplifier using GaN HEMT Eigo Kuwata, Koji Yamanaka, Tasuku Kirikoshi, Akira Inoue, Yoshihito Hirano (MELCO) MW2010-17 |
This paper reports on GaN HEMT (Gallium Nitride High Electron Mobility Transistor) HIC (Hybrid Integrated Circuit) high ... [more] |
MW2010-17 pp.17-22 |
SCE, MW |
2010-04-23 16:20 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
An L-band SiGe-BiCMOS Transmitter MMIC including Self Bias Controlled Amplifier with Power Detector Shintaro Shinjo, Miki Kagano, Tasuku Kirikoshi, Eiji Taniguchi, Mitsuhiro Shimozawa (Mitsubishi Electric Corp.) SCE2010-11 MW2010-11 |
[more] |
SCE2010-11 MW2010-11 pp.57-62 |
OPE, EMT, MW |
2009-07-31 09:50 |
Hokkaido |
Asahikawa Civic Culture Hall |
C-Ku band 120% relative bandwidth high efficiency high power amplifier using GaN HEMT Eigo Kuwata, Koji Yamanaka, Tasuku Kirikoshi, Akira Inoue, Yoshihito Hirano (Mitsubishi electric corp) MW2009-68 OPE2009-68 |
This paper reports on GaN HEMT (Gallium Nitride High Electron Mobility Transistor) HIC (Hybrid Integrated Circuit) high ... [more] |
MW2009-68 OPE2009-68 pp.205-209 |
MW, ED |
2009-01-14 14:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg |
design of broadband amplifier with consideration of output capacitance Eigo Kuwata, Koji Yamanaka, Tasuku Kirikoshi, Akira Inoue, Moriyasu Miyazaki (Mitsubishi Electric Co.) ED2008-200 MW2008-165 |
Recently, broadband amplifiers have become more important for ultra-wideband (UWB) radio communication systems and multi... [more] |
ED2008-200 MW2008-165 pp.11-15 |
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