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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 5 of 5  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2024-11-07
14:00		 Tokyo
(Primary: On-site, Secondary: Online)		 [Invited Talk] TCAD Simulation Modeling of Mold Epoxy Resin Applied for Encapsulation of Power Devices
Tomohiro Tamaki, Kohei Ebihara, Kazuya Konishi, Koki Kishimoto, Soneda Shinya, Tetsuo Takahashi, Tetsuya Nitta, Tatsuro Watahiki (Mitsubishi Electric), Keunsam Lee (Nihon Synopsys) SDM2024-57		  [more] SDM2024-57
pp.10-15
MW, ED 2023-01-27
13:40		 Tokyo Kikai-Shinko-Kaikan Bldg.
(Primary: On-site, Secondary: Online)		 Demonstration of high current and high voltage E-mode operation in EID AlGaN/GaN MOS-HEMT
Takuma Nanjo, Tomohiro Shinagawa, Tatsuro Watahiki, Naruhisa Miura, Masayuki Furuhashi, Kazuyasu Nishikawa (Mitsubishi Electric), Takashi Egawa (NITech) ED2022-93 MW2022-152		 (To be available after the conference date) [more] ED2022-93 MW2022-152
pp.36-39
ED, CPM, LQE 2021-11-26
16:50		 Online Online Demonstration of E-mode operation in planar type EID-MOS-HEMT with normally depleted AlGaN/GaN epitaxial layer
Takuma Nanjo, Takashi Imazawa, Akira Kiyoi, Tetsuro Hayashida, Tatsuro Watahiki, Naruhisa Miura (Mitsubishi Electric Corp.) ED2021-36 CPM2021-70 LQE2021-48		  [more] ED2021-36 CPM2021-70 LQE2021-48
pp.95-98
MW, ED 2019-01-17
15:25		 Tokyo Hitachi, Central Research Lab. ED2018-78 MW2018-145 (To be available after the conference date) [more] ED2018-78 MW2018-145
pp.55-58
MW, ED 2019-01-17
15:50		 Tokyo Hitachi, Central Research Lab. Reduction of dislocation density leading improvement of current collapse under high electric-field stress by using GaN-on-GaN structure
Akifumi Imai, Koji Yoshitsugu, Takuma Nanjo, Tatsuro Watahiki, Mikio Yamamuka (Mitsubishi Electric Co.) ED2018-79 MW2018-146		  [more] ED2018-79 MW2018-146
pp.59-62
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