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| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| EMCJ | 2024-01-19 14:45 |
Kumamoto | Comparison of laboratories with different reverberation chamber (RC) facilities and comparative analysis of RC and ALSE methods (Part 2)
-- Consideration of the effects of wire harness and ground plane -- Mitsuo Kaiyama (DENSO EMCES), Tatsuya Inoue (Panasonic Industry), Atsushi Arai (Tokin EMC Eng.), Ryo Nishikaji (KEC), akanori Unou (DENSO EMCES) |
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| EMCJ, IEE-EMC, IEE-SPC | 2022-12-07 13:25 |
Aichi | Comparison of laboratories with different reverberation chamber (RC) facilities and comparative analysis of RC and ALSE methods Mitsuo Kaiyama (DENSO EMCES), Tatsuya Inoue (Panasonic Industry), Atsushi Arai (Tokin EMC Eng.), Hironori Okamoto (KEC), Takanori Unou (DENSO EMCES)  EMCJ2022-67 |
The characteristics of equipment for the reverberation chamber (RC) method (ISO 11452-11) for EMC evaluation of in-vehic... [more] | EMCJ2022-67 pp.23-28 |
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| RECONF | 2012-09-18 11:35 |
Shiga | Epock Ritsumei 21, Ritsumeikan Univ. | An Implementation and Evaluation of SOC Estimation System for Lithium-ion Battery by PSoC Masashi Fujimoto, Tatsuya Inoue, Lei Lin, Masahiro Fukui (Ritsumeikan Univ.) RECONF2012-28 |
Aiming at exact residual quantity(SOC, state of charge) estimation of a lithium-ion storage battery, we have analyzed th... [more] | RECONF2012-28 pp.25-30 |
| SDM | 2009-11-13 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Atomic Scale Analysis of the Degradation Mechanism of the Integrity High-k/Metal-gate Interface Caused by the Interaction between Point-Defects and Residual Strain around the Interface Ken Suzuki, Yuta Itoh, Tatsuya Inoue, Hideo Miura (Tohoku Univ.), Hideki Yoshikawa, Keisuke Kobayashi (National Inst. for Materials Science), Seiji Samukawa (Tohoku Univ.) SDM2009-149 |
Control of the interfacial crystallographic structure between a dielectric film and a gate electrode is one of the most ... [more] | SDM2009-149 pp.79-84 |
| ED, SDM | 2008-01-30 15:55 |
Hokkaido | Nonlinear electron transport properties in InAs/AlGaSb three-terminal ballistic junctions Masatoshi Koyama, Tatsuya Inoue, Naoki Amano, Kenji Fujiwara, Toshihiko Maemoto, Shigehiko Sasa, Masataka Inoue (Osaka Inst. Tech.) ED2007-242 SDM2007-253 |
The nonlinear electron transport properties and rectification effects in InAs/AlGaSb ballistic devices are reported. We ... [more] | ED2007-242 SDM2007-253 pp.29-32 |
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| SDM, ED | 2007-02-02 11:05 |
Hokkaido | Ballistic electron transport properties and rectification effects in InAs/AlGaSb mesoscopic structures Masatoshi Koyama, Hiroshi Takahashi, Tatsuya Inoue, Toshihiko Maemoto, Shigehiko Sasa, Masataka Inoue (Osaka Inst. Tech.) |
[more] | ED2006-252 SDM2006-240 pp.67-71 |
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| ED | 2006-12-08 13:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Fabrication and characterization of Sb-based diode structures for detecting subterahertz waves Hiroshi Takahashi, Tatsuya Inoue, Toshihiko Maemoto, Shigehiko Sasa, Masataka Inoue (Osaka Inst. of Tech.) |
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