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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2007-06-08
10:30
Hiroshima Hiroshima Univ. ( Faculty Club) The Effect of Nitrogen Addition into HfSiON on Threshold Voltage Shift
Chihiro Tamura, Tatsuya Naito (Univ. of Tsukuba), Motoyuki Sato, Seiji Inumiya (Selete), Ryu Hasunuma, Kikuo Yamabe (Univ. of Tsukuba) SDM2007-42
The threshold voltage shift was analyzed for the FETs with HfSiOx or HfSiON films. It was found that the NBTI slope, B (... [more] SDM2007-42
pp.59-64
SDM 2006-06-22
14:40
Hiroshima Faculty Club, Hiroshima Univ. Electric characteristics of HfSiON gate dielectric film(tentative)
Ryu Hasunuma, Tatsuya Naito (Univ. of Tsukuba), Seiji Inumiya (Selete), Kikuo Yamabe (Univ. of Tsukuba)
 [more] SDM2006-62
pp.113-117
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