Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ICD |
2013-04-12 11:35 |
Ibaraki |
Advanced Industrial Science and Technology (AIST) |
[Invited Lecture]
Design of Vset/reset(3V), Vpgm(20V) generator system for 3D-ReRAM and NAND flash memory hybrid solid-state drives Teruyoshi Hatanaka (Chuo Univ./Univ. of Tokyo), Koh Johguchi, Shogo Hachiya, Ken Takeuchi (Chuo Univ.) ICD2013-16 |
[more] |
ICD2013-16 pp.79-84 |
ICD |
2012-12-17 15:55 |
Tokyo |
Tokyo Tech Front |
[Poster Presentation]
Single-Inductor, Dual-Output, Parallel-Boosting Architecture to Generate ReRAM and NAND Flash Memory Programming Voltages for 3D-Integrated Hybrid Solid-State Drives Shoto Nakajima (Chuo Univ.), Teruyoshi Hatanaka (Chuo Univ./Univ. of Tokyo), Ken Takeuchi (Chuo Univ.) ICD2012-93 |
[more] |
ICD2012-93 p.29 |
ICD |
2012-04-24 09:50 |
Iwate |
Seion-so, Tsunagi Hot Spring (Iwate) |
4-Times Faster Rising Vpass (10V), 15% Lower Power Vpgm (20V), Wide Output Voltage Range Voltage Generator System for 4-Times Faster 3D-integrated Solid-State Drives Teruyoshi Hatanaka, Ken Takeuchi (Univ. of Tokyo) ICD2012-8 |
[more] |
ICD2012-8 pp.37-42 |
ICD |
2011-12-15 16:10 |
Osaka |
|
[Poster Presentation]
4-Times Faster Rising Vpass (10V), 15% Lower Power Vpgm (20V), Wide Output Voltage Range Voltage Generator System for 4-Times Faster 3D-integrated Solid-State Drives Teruyoshi Hatanaka, Ken Takeuchi (Tokyo Univ.) ICD2011-117 |
A wide output voltage range from 10 V to 20 V voltage generator system is proposed for 3D-SSDs. The circuits are fabrica... [more] |
ICD2011-117 pp.81-86 |
ICD |
2011-04-19 14:25 |
Hyogo |
Kobe University Takigawa Memorial Hall |
Design of Program-voltage(20V) Booster and TSV for High Speed and Low Power 3-D Solid State Drive System Teruyoshi Hatanaka, Koh Johguchi, Koichi Ishida, Tadashi Yasufuku, Makoto Takamiya, Takayasu Sakurai, Ken Takeuchi (Univ. of Tokyo) ICD2011-16 |
A design of high speed and low power high-voltage generator system that includes a program-voltage (20V) booster and TSV... [more] |
ICD2011-16 pp.87-92 |
ICD |
2010-12-17 10:20 |
Tokyo |
RCAST, Univ. of Tokyo |
Low Power and Highly Reliable Ferroelectric (Fe)-NAND Flash Memory for Enterprise SSD Teruyoshi Hatanaka, Ryoji Yajima, Shinji Noda (Univ. of Tokyo), Mitsue Takahashi, Shigeki Sakai (AIST), Ken Takeuchi (Univ. of Tokyo) ICD2010-118 |
This paper proposes the techniques for highly reliable ferroelectric(Fe)-NAND flash memory. Fe-NAND has the low program/... [more] |
ICD2010-118 pp.113-118 |
ICD, SDM |
2010-08-27 09:25 |
Hokkaido |
Sapporo Center for Gender Equality |
A 1.0V Power Supply, 9.5GByte/sec Write Speed, Single-Cell Self-Boost Program Scheme for Ferroelectric NAND Flash SSD Kousuke Miyaji, Shinji Noda, Teruyoshi Hatanaka (Univ. of Tokyo), Mitsue Takahashi, Shigeki Sakai (AIST), Ken Takeuchi (Univ. of Tokyo) SDM2010-139 ICD2010-54 |
A Single-Cell Self-Boost (SCSB) program scheme is proposed to achieve a 1.0V power supply operation in Ferroelectric (Fe... [more] |
SDM2010-139 ICD2010-54 pp.83-88 |
ICD, SDM |
2010-08-27 09:50 |
Hokkaido |
Sapporo Center for Gender Equality |
A 60% Higher Write Speed, 4.2Gbps, 24-Channel 3D-Solid State Drive (SSD) with NAND Flash Channel Number Detector and Intelligent Program-Voltage Booster Teruyoshi Hatanaka, Koichi Ishida, Tadashi Yasufuku (Univ. of Tokyo), Shinji Miyamoto, Hiroto Nakai (Toshiba), Makoto Takamiya, Takayasu Sakurai, Ken Takeuchi (Univ. of Tokyo) SDM2010-140 ICD2010-55 |
[more] |
SDM2010-140 ICD2010-55 pp.89-94 |
ICD |
2010-04-22 11:40 |
Kanagawa |
Shonan Institute of Tech. |
32% Lower Active Power, 42% Lower Leakage Current Ferroelectric 6T-SRAM with VTH Self-Adjusting Function for 60% Larger Static Noise Margin (SNM) Shuhei Tanakamaru, Teruyoshi Hatanaka, Ryoji Yajima (Univ. of Tokyo), Mitsue Takahashi, Shigeki Sakai (AIST), Ken Takeuchi (Univ. of Tokyo) ICD2010-5 |
A 0.5V 6T-SRAM with ferroelectric (Fe-) FETs is proposed and experimentally demonstrated for the first time. The propose... [more] |
ICD2010-5 pp.23-28 |
ICD |
2010-04-23 09:30 |
Kanagawa |
Shonan Institute of Tech. |
Ferroelectric (Fe)-NAND Flash Memory with Non-volatile Page Buffer for Data Center Application Enterprise Solid-State Drives (SSD) Teruyoshi Hatanaka, Ryoji Yajima (Univ. of Tokyo), Takeshi Horiuchi, Shouyu Wang, Xizhen Zhang, Mitsue Takahashi, Shigeki Sakai (AIST), Ken Takeuchi (Univ. of Tokyo) ICD2010-11 |
A ferroelectric (Fe)-NAND flash memory with a non-volatile (NV) page buffer is proposed. The data fragmentation in a ran... [more] |
ICD2010-11 pp.59-64 |
ICD, SDM |
2009-07-16 14:25 |
Tokyo |
Tokyo Institute of Technology |
Ferroelectric(Fe)-NAND Flash Memory with Non-volatile Page Buffer for Data Center Application Enterprise Solid-State Drives (SSD) Ryoji Yajima, Teruyoshi Hatanaka (Univ. of Tokyo), Mitsue Takahashi, Shigeki Sakai (AIST), Ken Takeuchi (Univ. of Tokyo) SDM2009-104 ICD2009-20 |
A ferroelectric (Fe)-NAND flash memory with a non-volatile (NV) page buffer is proposed. The data fragmentation in a ran... [more] |
SDM2009-104 ICD2009-20 pp.39-44 |