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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 11 of 11  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2013-04-12
11:35
Ibaraki Advanced Industrial Science and Technology (AIST) [Invited Lecture] Design of Vset/reset(3V), Vpgm(20V) generator system for 3D-ReRAM and NAND flash memory hybrid solid-state drives
Teruyoshi Hatanaka (Chuo Univ./Univ. of Tokyo), Koh Johguchi, Shogo Hachiya, Ken Takeuchi (Chuo Univ.) ICD2013-16
 [more] ICD2013-16
pp.79-84
ICD 2012-12-17
15:55
Tokyo Tokyo Tech Front [Poster Presentation] Single-Inductor, Dual-Output, Parallel-Boosting Architecture to Generate ReRAM and NAND Flash Memory Programming Voltages for 3D-Integrated Hybrid Solid-State Drives
Shoto Nakajima (Chuo Univ.), Teruyoshi Hatanaka (Chuo Univ./Univ. of Tokyo), Ken Takeuchi (Chuo Univ.) ICD2012-93
 [more] ICD2012-93
p.29
ICD 2012-04-24
09:50
Iwate Seion-so, Tsunagi Hot Spring (Iwate) 4-Times Faster Rising Vpass (10V), 15% Lower Power Vpgm (20V), Wide Output Voltage Range Voltage Generator System for 4-Times Faster 3D-integrated Solid-State Drives
Teruyoshi Hatanaka, Ken Takeuchi (Univ. of Tokyo) ICD2012-8
 [more] ICD2012-8
pp.37-42
ICD 2011-12-15
16:10
Osaka   [Poster Presentation] 4-Times Faster Rising Vpass (10V), 15% Lower Power Vpgm (20V), Wide Output Voltage Range Voltage Generator System for 4-Times Faster 3D-integrated Solid-State Drives
Teruyoshi Hatanaka, Ken Takeuchi (Tokyo Univ.) ICD2011-117
A wide output voltage range from 10 V to 20 V voltage generator system is proposed for 3D-SSDs. The circuits are fabrica... [more] ICD2011-117
pp.81-86
ICD 2011-04-19
14:25
Hyogo Kobe University Takigawa Memorial Hall Design of Program-voltage(20V) Booster and TSV for High Speed and Low Power 3-D Solid State Drive System
Teruyoshi Hatanaka, Koh Johguchi, Koichi Ishida, Tadashi Yasufuku, Makoto Takamiya, Takayasu Sakurai, Ken Takeuchi (Univ. of Tokyo) ICD2011-16
A design of high speed and low power high-voltage generator system that includes a program-voltage (20V) booster and TSV... [more] ICD2011-16
pp.87-92
ICD 2010-12-17
10:20
Tokyo RCAST, Univ. of Tokyo Low Power and Highly Reliable Ferroelectric (Fe)-NAND Flash Memory for Enterprise SSD
Teruyoshi Hatanaka, Ryoji Yajima, Shinji Noda (Univ. of Tokyo), Mitsue Takahashi, Shigeki Sakai (AIST), Ken Takeuchi (Univ. of Tokyo) ICD2010-118
This paper proposes the techniques for highly reliable ferroelectric(Fe)-NAND flash memory. Fe-NAND has the low program/... [more] ICD2010-118
pp.113-118
ICD, SDM 2010-08-27
09:25
Hokkaido Sapporo Center for Gender Equality A 1.0V Power Supply, 9.5GByte/sec Write Speed, Single-Cell Self-Boost Program Scheme for Ferroelectric NAND Flash SSD
Kousuke Miyaji, Shinji Noda, Teruyoshi Hatanaka (Univ. of Tokyo), Mitsue Takahashi, Shigeki Sakai (AIST), Ken Takeuchi (Univ. of Tokyo) SDM2010-139 ICD2010-54
A Single-Cell Self-Boost (SCSB) program scheme is proposed to achieve a 1.0V power supply operation in Ferroelectric (Fe... [more] SDM2010-139 ICD2010-54
pp.83-88
ICD, SDM 2010-08-27
09:50
Hokkaido Sapporo Center for Gender Equality A 60% Higher Write Speed, 4.2Gbps, 24-Channel 3D-Solid State Drive (SSD) with NAND Flash Channel Number Detector and Intelligent Program-Voltage Booster
Teruyoshi Hatanaka, Koichi Ishida, Tadashi Yasufuku (Univ. of Tokyo), Shinji Miyamoto, Hiroto Nakai (Toshiba), Makoto Takamiya, Takayasu Sakurai, Ken Takeuchi (Univ. of Tokyo) SDM2010-140 ICD2010-55
 [more] SDM2010-140 ICD2010-55
pp.89-94
ICD 2010-04-22
11:40
Kanagawa Shonan Institute of Tech. 32% Lower Active Power, 42% Lower Leakage Current Ferroelectric 6T-SRAM with VTH Self-Adjusting Function for 60% Larger Static Noise Margin (SNM)
Shuhei Tanakamaru, Teruyoshi Hatanaka, Ryoji Yajima (Univ. of Tokyo), Mitsue Takahashi, Shigeki Sakai (AIST), Ken Takeuchi (Univ. of Tokyo) ICD2010-5
A 0.5V 6T-SRAM with ferroelectric (Fe-) FETs is proposed and experimentally demonstrated for the first time. The propose... [more] ICD2010-5
pp.23-28
ICD 2010-04-23
09:30
Kanagawa Shonan Institute of Tech. Ferroelectric (Fe)-NAND Flash Memory with Non-volatile Page Buffer for Data Center Application Enterprise Solid-State Drives (SSD)
Teruyoshi Hatanaka, Ryoji Yajima (Univ. of Tokyo), Takeshi Horiuchi, Shouyu Wang, Xizhen Zhang, Mitsue Takahashi, Shigeki Sakai (AIST), Ken Takeuchi (Univ. of Tokyo) ICD2010-11
A ferroelectric (Fe)-NAND flash memory with a non-volatile (NV) page buffer is proposed. The data fragmentation in a ran... [more] ICD2010-11
pp.59-64
ICD, SDM 2009-07-16
14:25
Tokyo Tokyo Institute of Technology Ferroelectric(Fe)-NAND Flash Memory with Non-volatile Page Buffer for Data Center Application Enterprise Solid-State Drives (SSD)
Ryoji Yajima, Teruyoshi Hatanaka (Univ. of Tokyo), Mitsue Takahashi, Shigeki Sakai (AIST), Ken Takeuchi (Univ. of Tokyo) SDM2009-104 ICD2009-20
A ferroelectric (Fe)-NAND flash memory with a non-volatile (NV) page buffer is proposed. The data fragmentation in a ran... [more] SDM2009-104 ICD2009-20
pp.39-44
 Results 1 - 11 of 11  /   
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