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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 17 of 17  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2019-10-24
Miyagi Niche, Tohoku Univ. Observation of Fluctuation of Magnetron Sputtering Plasmas Using High-speed Video Camera
Shintaro Yamazaki, Tetsuya Goto, Manabu Suzuki, Rihito Kuroda, Shigetoshi Sugawa (Tohoku Univ.) SDM2019-67
 [more] SDM2019-67
SDM 2018-10-17
Miyagi Niche, Tohoku Univ. Low-Temperature Formation of Ohmic Contact for Si TFT Fabrication by Excimer Laser Doping with Phosphoric Acid Coating
Kaname Imokawa (Kyushu Univ), Nozomu Tanaka (Kyushu Univ.), Akira Suwa (Kyushu Univ), Daisuke Nakamura, Taizoh Sadoh (Kyushu Univ.), Tetsuya Goto (New Industry Creation Hatchery Center, Tohoku Univ.), Hiroshi Ikenoue (Kyushu Univ) SDM2018-54
There are some issues in printable Si TFT processes. In particlular, formation of ormic contact of silicon TFT requiers ... [more] SDM2018-54
SDM 2017-10-25
Miyagi Niche, Tohoku Univ. Experimental Investigation of Localized Stress Induced Leakage Current Distribution and its Decrease by Atomically Flattening Process
Hyeonwoo Park, Rihito Kuroda, Tetsuya Goto, Tomoyuki Suwa, Akinobu Teramoto, Daiki Kimoto, Shigetoshi Sugawa (Tohoku Univ) SDM2017-51
Stress Induced Leakage Current (SILC) distributions of a large number of small nMOS transistors with different gate size... [more] SDM2017-51
EA, ASJ-H 2017-10-21
Toyama Ushidake-Onsen [Poster Presentation] The possibility of Free-run EMG Estimation by an Analyzing and Recording System of the Intraoperative Spontaneous EMG Monitoring
Kenji Furihata, Tetsuya Goto, Kazuhiro Hongo (Shinshu Univ.), Satoshi Yasumoto (Ichikawa Corp.)
 [more] EA2017-52
EA, ASJ-H 2017-08-10
Miyagi Tohoku Univ., R. I. E. C. The possibility of Discrimination Whether Intracranial Pressure is Higher or Lower than a Critical Value by the External Auditory Canal Pressure Pulse Waves
Kenji Furihata, Tetsuya Goto, Kazuhiro Hongo (Shinshu Univ.), Norio Koike (Ichikawa Ltd.) EA2017-34
Noninvasive monitoring of the intracranial pressure (ICP) via the auditory system is theoretically possible because chan... [more] EA2017-34
EA, ASJ-H 2017-08-10
Miyagi Tohoku Univ., R. I. E. C. Predicting Intracranial Pressure through a Noninvasive Method
Kenji Furihata, Tetsuya Goto, Kazuhiro Hongo (Shinshu Univ.), Norio Koike (Ichikawa Ltd.) EA2017-35
In the previous paper, as the result of our own discrimination analysis: (a) the presence of a critical intracranial pre... [more] EA2017-35
SDM 2016-10-27
Miyagi Niche, Tohoku Univ. Behavior of Random Telegraph Noise toward Bias Voltage Changing
Takezo Mawaki, Akinobu Teramoto, Rihito Kuroda, Shinya Ichino, Tetsuya Goto, Tomoyuki Suwa, Shigetoshi Sugawa (Tohoku Univ.) SDM2016-75
As the progression of MOSFETs scaling down continues, the impacts of RTN (Random Telegraph Noise) on the MOSFETs have be... [more] SDM2016-75
SDM 2015-10-29
Miyagi Niche, Tohoku Univ. Ultra-Low Temperature Flattening Technique of Silicon Surface Using Xe/H2 Plasma
Tomoyuki Suwa, Akinobu Teramoto, Tetsuya Goto, Masaki Hirayama, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2015-73
In order to flatten any crystal orientation of Si surface including Si-fin-structure and to introduce the flattening pro... [more] SDM2015-73
SDM 2015-10-29
Miyagi Niche, Tohoku Univ. Electrical Properties of MOSFETs Introducing Atomically Flat Gate Insulator/Silicon Interface
Tetsuya Goto, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa (Tohoku Univ.), Yutaka Kamata, Yuki Kumagai, Katsuhiko Shibusawa (LAPIS Semi. Miyagi) SDM2015-74
Atomically flattening technology was introduced to the widely-used complementary metal oxide silicon (CMOS) process empl... [more] SDM2015-74
SDM 2015-10-30
Miyagi Niche, Tohoku Univ. Ferroelectric BiFeO3 Formation with Oxigen Radical Treatment
Fuminobu Imaizumi, Tetsuya Goto, Akinobu Teramoto, Shigetoshi Sugawa (Tohoku Univ.) SDM2015-78
Oxygen radical treatment was applied to sputter-deposited BiFeO3 (BFO) thin film which is expected to be used for ferroe... [more] SDM2015-78
SDM 2015-10-30
Miyagi Niche, Tohoku Univ. Low Work Function LaB6 Thin Films Prepared by Nitrogen Doped LaB6 Target Sputtering
Hidekazu Ishii (Tohoku Univ), Takahashi Kentarou (Sumitomo Osaka Cement), Tetsuya Goto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ) SDM2015-81
LaB6 thin films were deposited by magnetron sputtering, and their work function was investigated. It was found that the ... [more] SDM2015-81
SDM 2015-10-30
Miyagi Niche, Tohoku Univ. Study of process temperature of Al2O3 atomic layer deposition using high accuracy process gasses supply controller
Hisaya Sugita, Yasumasa Koda, Tomoyuki Suwa, Rihito Kuroda, Tetsuya Goto, Hidekazu Ishii (Tohoku Univ.), Satoru Yamashita (Fujikin), Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2015-83
 [more] SDM2015-83
SDM 2014-10-16
Miyagi Niche, Tohoku Univ. Introduction of Atomically Flattening of Silicon Surface in Shallow Trench Isolation Process Technology
Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.), Yuki Kumagai, Yutaka Kamata, Katsuhiko Shibusawa (LAPIS Semiconductor Miyagi) SDM2014-85
Atomically flattening technology was introduced to the widely-used complementary metal oxide silicon (CMOS) process empl... [more] SDM2014-85
SDM 2014-10-17
Miyagi Niche, Tohoku Univ. Analysis of trap density causing random telegraph noise in MOSFETs
Toshiki Obara, Akinobu Teramoto, Rihito Kuroda, Akihiro Yonezawa, Tetsuya Goto, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2014-93
The incidence ratio of Random Telegraph Noise in 131,072 MOSFETs was evaluated statistically by using array test circuit... [more] SDM2014-93
SDM 2013-10-18
Miyagi Niche, Tohoku Univ. A Study on Nitrogen-Doped LaB6 Thin Film Formation and Its Device Applications
Yasutaka Maeda, Shun-ichiro Ohmi (Tokyo Inst. of Tech.), Tetsuya Goto, Tadahiro Ohmi (Tohoku Univ.) SDM2013-93
It was reported that oxidation immunity of LaB6 was improved by nitrogen incorporation. Basic characteristics of nitrog... [more] SDM2013-93
ED, CPM, SDM 2009-05-14
Aichi Satellite Office, Toyohashi Univ. of Technology Deposition of Microcrystalline SiGe by Magnetron Sputtering on SiO2 Substrates
Akihiko Hiroe, Tetsuya Goto, Akinobu Teramoto, Tadahiro Ohmi (Tohoku Univ.) ED2009-25 CPM2009-15 SDM2009-15
Microcrystalline Si1-xGex (x~0.8) has been successfully deposited over SiO2 substrates by magnetron sputtering. Detailed... [more] ED2009-25 CPM2009-15 SDM2009-15
SDM 2007-10-05
Miyagi Tohoku Univ. High Performance Accumulation Mode FD-SOI MOSFETs on Si(100) and (110) Surfaces
Weitao Cheng, Akinobu Teramoto, Rihito Kuroda, Chingfoa Tye, Syunichi Watabe, Tomoyuki Suwa, Tetsuya Goto, Fuminobu Imaizumi, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2007-187
 [more] SDM2007-187
 Results 1 - 17 of 17  /   
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