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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 24  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, THz 2021-12-20
13:00
Miyagi
(Primary: On-site, Secondary: Online)
[Invited Talk] Recent Progress in Carrier Down-Conversion Devices Between Optical Communication and Beyond 5G Wireless Communication
Akira Satou, Dai Nakajima, Kazuki Nishimura, Tomotaka Hosotani, Katsumi Iwatsuki, Tetsuya Suemitsu, Keisuke Kasai, Masato Yoshida, Taiichi Otsuji (Tohoku Univ.) ED2021-48
echnologies that seamlessly converges optical networks and wireless networks with small delay and low power consumption ... [more] ED2021-48
pp.1-5
MW, ED 2021-01-29
14:50
Online Online A study on precise extraction of parasitic resistances in InGaAs HEMTs
Keigo Yaguchi (Tokyo Univ. of Science), Tomotaka Hosotani (Tohoku Univ.), Yohtaro Umeda, Kyoya Takano (Tokyo Univ. of Science), Tetsuya Suemitsu, Akira Satou (Tohoku Univ.) ED2020-35 MW2020-88
In this paper, we propose a new method to extract the parasitic resistances of high electron mobility transistor (HEMT) ... [more] ED2020-35 MW2020-88
pp.38-43
ED, THz 2018-12-18
10:05
Miyagi RIEC, Tohoku Univ. 2D nanoantennas for Controlling Polarization Characteristics of a Grating-Gate Plasmonic THz Detector
Masaya Suzuki, Tomotaka Hosotani, Tetsuya Suemitsu (Tohoku Univ.), Yuma Takida, Hiromasa Ito, Hiroaki Minamide (RIKEN), Taiich Otsuji, Akira Satou (Tohoku Univ.) ED2018-64
 [more] ED2018-64
pp.43-46
ED, THz 2017-12-19
10:05
Miyagi RIEC, Tohoku Univ Optical-to-MMW Carrier-Frequency Down-Conversion by InP-HEMT
Yuya Omori, Tomotaka Hosotani, Taichi Otsuji, Katsumi Iwatsuki, Tetsuya Suemitsu (Tohoku Univ), Kaoru Higuma, Junichiro Ichikawa (Sumitomo Osaka Cement), Takahide Sakamoto, Naokatsu Yamamoto (NICT), Akira Satou (Tohoku Univ) ED2017-83
 [more] ED2017-83
pp.41-45
SDM, ED, CPM 2017-05-26
10:45
Aichi VBL, Nagoya University N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE
Kiattiwut Prasertsuk, Tomoyuki Tanikawa, Takeshi Kimura, Shigeyuki Kuboya, Tetsuya Suemitsu, Takashi Matsuoka (Tohoku Univ.) ED2017-26 CPM2017-12 SDM2017-20
An N-polar GaN high electron mobility transistor (HEMT) has an advantage over a Ga-polar HEMT from viewpoints of a poten... [more] ED2017-26 CPM2017-12 SDM2017-20
pp.59-64
ED 2016-12-19
16:30
Miyagi RIEC, Tohoku Univ Improvement of light receiving efficiency of Asymmetric-Dual-Grating-Gate High-Electron-Mobility-Transistor by series array and lens integration
Tomotaka Hosotani, Fuzuki Kasuya, Hiroki Taniguchi, Takayuki Watanabe, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.), Yuma Takida, Hiromasa Ito, Hiroaki Minamide (RIKEN), Tadao Ishibashi (NTT Electronics Techno), Makoto Shimizu (NEL), Akira Satou (Tohoku Univ.) ED2016-84
Asymmetric-dual-grating-gate high-electron-mobility-transistors (ADGG-HEMTs) are expected for room-temperature operating... [more] ED2016-84
pp.23-28
CS, OCS
(Joint)
2016-01-22
09:50
Kagoshima Kagoshima University, Korimoto Campus, Inamori Auditorium Sub-THz Photonic Frequency Conversion Using Graphene and InP-Based Transistors for Future Fully Coherent Access Network
Kenta Sugawara, Gen Tamamushi, Adrian Dobroiu, Tomohiro Yoshida, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, Ryzhii Victor, Katsumi Iwatsuki (Tohoku Univ.), Shigeru Kuwano, Jun-ichi Kani, Jun Terada (NTT), Taiichi Otsuji (Tohoku Univ.) OCS2015-95
The feasibility of graphene-channel field effect transistors (G-FETs) and InP based high electron mobility transistors (... [more] OCS2015-95
pp.41-46
WPT, MW 2015-04-16
15:25
Tokyo Kikai-Shinko-Kaikan Bldg. Design of a 60GHz InGaAs HEMT class-F power amplifier with reactive negative feedback
Kunihiko Watanabe, Yohtaro Umeda (Tokyo Univ. of Science), Tomohiro Yoshida, Tetsuya Suemitsu (Tohoku Univ.) WPT2015-4 MW2015-4
In this paper, InGaAs HEMT 60GHz Class-F power amplifier (PA) with reactive negative feedback is designed and simulated.... [more] WPT2015-4 MW2015-4
pp.15-19
ED 2014-12-22
14:10
Miyagi   Millimeterwave-photomixing by InGaAs channel HEMT and graphene channel FETs
Tetsuya Kawasaki, Tomohiro Yoshida, Kenta Sugawara, Adrian Dobroiu, Takayuki Watanabe, Hiroki Sugiyama, Hiroyuki Wakou (Tohoku Univ.), Jun-ichi Kani, Jun Terada, Shigeru Kuwano (NTT), Hiroki Ago, Kenji Kawahara (Kyushu Univ.), Katsumi Iwatsuki, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2014-100
We experimentally investigated the photomixing function in the millimeter wave range by using InGaAs channel high electr... [more] ED2014-100
pp.9-13
ED 2014-12-23
10:05
Miyagi   Broadband characteristics of plasmonic terahertz detection using asymmetric dual-grating-gate high-electron-mobility transistors
Akira Satou, Stephane Bobanga Tombet, Takayuki Watanabe, Tetsuya Kawasaki, Tetsuya Suemitsu (Tohoku Univ.), Denis V Fateev, Vyacheslav V Popov (IREE), Hiroaki Minamide, Hiromasa Ito (RIKEN), Dominique Coquillat, Wojciech Knap (Univ. Montpellier 2), Guillaume Ducournau (IEMN), Taiichi Otsuji (Tohoku Univ.) ED2014-109
We compare the measured broadband characteristics of the responsivity of asymmetric dual-grating-gate high-elect... [more] ED2014-109
pp.63-67
MW 2014-03-05
14:45
Ehime Ehime University 60-GHz-Band Class-F Amplifier with InGaAs HEMT
Masashi Oyama, Toshiki Kishi, Yohtaro Umeda (Tokyo Univ. of Science), Tomohiro Yoshida, Tetsuya Suemitsu (Tohoku Univ.) MW2013-220
 [more] MW2013-220
pp.133-138
ED 2013-12-17
14:10
Miyagi Research Institute of Electrical Communication Tohoku University Ultrahigh Sensitive and Frequency-Tunable Terahertz Detection by Asymmetric Dual-Grating-Gate HEMTs
Tetsuya Kawasaki, Shinya Hatakeyama, Yuki Kurita (Tohoku Univ.), Guillaume Ducournau (IEMN), Dominique Coquillat (Univ. Montpellier 2 & CNRS), Kengo Kobayashi, Akira Satou (Tohoku Univ.), Yahya M. Meziani (Univ. Salamanca), Vyacheslav. V. Popov (Kotelnikov Inst. Radio Eng. Electron), Wojciech Knap (Univ. Montpellier 2 & CNRS), Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2013-107
We report on ultrahigh sensitive and frequency-tunable terahertz (THz) detectors by our original asymmetric dual-grating... [more] ED2013-107
pp.97-100
MW, ED 2013-01-18
14:55
Tokyo Kikai-Shinko-Kaikan Bldg. AlGaN/GaN MIS-Gate HEMTs with SiCN Gate Stacks
Kengo Kobayashi, Tomohiro Yoshida, Taiichi Otsuji, Ryuji Katayama, Takashi Matsuoka, Tetsuya Suemitsu (Tohoku Univ.) ED2012-126 MW2012-156
This paper reports AlGaN/GaN metal-insulator-semiconductor (MIS)-gate high electron mobility transistors (HEMTs) with a ... [more] ED2012-126 MW2012-156
pp.75-78
MW, ED 2013-01-18
15:20
Tokyo Kikai-Shinko-Kaikan Bldg. InGaAs HEMTs with T-gate electrodes formed by multi-layer SiCN molds
Tomohiro Yoshida, Kengo Kobayashi, Taiichi Otsuji, Tetsuya Suemitsu (Tohoku Univ.) ED2012-127 MW2012-157
Recently, the gate lengths of HEMTs have been achieved below 0.1 $\mu$m. In general, T-gate electrodes are employed for ... [more] ED2012-127 MW2012-157
pp.79-84
ED 2012-07-27
11:50
Fukui Fukui University Graphene FET with Diamondlike Carbon Dielectrics
Susumu Takabayashi, Meng Yang, Shuichi Ogawa, Hiroyuki Hayashi, Yuki Kurita, Yuji Takakuwa, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2012-53
A graphene-channel field effect transistor with a diamondlike carbon (DLC) top-gate dielectric film is presented (DLC-GF... [more] ED2012-53
pp.67-72
ED, SDM 2010-06-30
14:50
Tokyo Tokyo Inst. of Tech. Ookayama Campus [Invited Talk] Graphene channel FET: A New Candidate for High-Speed Devices
Tetsuya Suemitsu (Tohoku Univ.) ED2010-67 SDM2010-68
Graphene is a single layer of graphite and is now one of exciting area of research because of its potential of high carr... [more] ED2010-67 SDM2010-68
pp.69-72
ED 2009-11-30
09:50
Osaka Osaka Science & Technology Center Multichip Operation of Plasmon-Resonant Microchip Emitter for Broadband Terahertz Spectroscopic Measurement
Takayuki Watanabe, Tsuneyoshi Komori, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2009-168
We have experimentally observed the emission of broadband terahertz radiation with a microwatt power at room temperature... [more] ED2009-168
pp.47-51
SDM, ED 2009-02-26
13:30
Hokkaido Hokkaido Univ. [Invited Talk] Epitaxial Graphene Grown on Si Substrate and Its Applications to Electron Devices
Taiichi Otsuji, Tetsuya Suemitsu, Hyon-Choru Kang, Hiromi Karasawa, Yuu Miyamoto, Hiroyuki Handa, Maki Suemitsu (Tohoku Univ.), Eiichi Sano (Hokkaido Univ.), Maxim Ryzhii, Victor Ryzhii (Univ. of Aizu) ED2008-224 SDM2008-216
This paper reviews recent advances in graphene material epitaxially grown on Si substrate and its applications to electr... [more] ED2008-224 SDM2008-216
pp.1-6
MW, ED 2009-01-15
13:25
Tokyo Kikai-Shinko-Kaikan Bldg Influence of Gate Structure on Parasitic Gate Delay in InGaAs-Channel HEMTs
Kohei Horiike, Syunsuke Fukuda, Keisuke Akagawa, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2008-211 MW2008-176
InP-based high electron mobility transistors (HEMTs) have been developed for microwave and millimeter-wave ICs. By scali... [more] ED2008-211 MW2008-176
pp.77-81
ED 2008-12-20
10:45
Miyagi Tohoku Univ. [Invited Talk] Emission and detection using two dimensional plasma oscillations in nanometer transistors and their applications to terahertz imaging
Abdelouahad El Fatimy, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.), P. Mounaix, J. C. Delagnes (Univ. Bordeaux), Wojciech Knap, Nina Dyakonova (Univ. Montpellier2) ED2008-194
We present recent results on terahertz emission/detection utilizing two-dimensional plasmons in different types of InGaA... [more] ED2008-194
pp.47-52
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