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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, MWPTHz | 2023-12-22 11:05 |
Miyagi | RIEC, Tohoku Univ. (Primary: On-site, Secondary: Online) |
High sensitivity THz Detection based on a Rectenna Graphene FET implemented with 3D Rectification Effect Hironobu Seki, Sinnosuke Uchigasaki, Koichi Tamura, Chao Tang, Akira Satou, Hirokazu Hukidome (RIEC, Tohoku Univ.), Tetsuya Suemitsu (NICHe), Takashi Uchino (Tohoku Institute of Technology), Yuma Takida, Hiroaki Minamide (RIKEN), Taiichi Otsuji (RIEC, Tohoku Univ.)  ED2023-64 MWPTHz2023-74 |
In order to realize a super-smart society, next-generation high-speed, high-capacity wireless communication technologies... [more] | ED2023-64 MWPTHz2023-74 pp.52-57 |
| ED, MWPTHz | 2022-12-19 17:10 |
Miyagi | ED2022-78 MWPTHz2022-49 |
We experimentally investigate the effect of high-intensity subcarrier signal input to the UTC-PD-integrated HEMT working... [more] | ED2022-78 MWPTHz2022-49 pp.34-37 |
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| ED, THz | 2021-12-20 13:00 |
Miyagi | (Primary: On-site, Secondary: Online) |
[Invited Talk]
Recent Progress in Carrier Down-Conversion Devices Between Optical Communication and Beyond 5G Wireless Communication Akira Satou, Dai Nakajima, Kazuki Nishimura, Tomotaka Hosotani, Katsumi Iwatsuki, Tetsuya Suemitsu, Keisuke Kasai, Masato Yoshida, Taiichi Otsuji (Tohoku Univ.) ED2021-48 |
echnologies that seamlessly converges optical networks and wireless networks with small delay and low power consumption ... [more] | ED2021-48 pp.1-5 |
| MW, ED | 2021-01-29 14:50 |
Online | Online | A study on precise extraction of parasitic resistances in InGaAs HEMTs Keigo Yaguchi (Tokyo Univ. of Science), Tomotaka Hosotani (Tohoku Univ.), Yohtaro Umeda, Kyoya Takano (Tokyo Univ. of Science), Tetsuya Suemitsu, Akira Satou (Tohoku Univ.) ED2020-35 MW2020-88 |
In this paper, we propose a new method to extract the parasitic resistances of high electron mobility transistor (HEMT) ... [more] | ED2020-35 MW2020-88 pp.38-43 |
| ED, THz | 2018-12-18 10:05 |
Miyagi | RIEC, Tohoku Univ. | 2D nanoantennas for Controlling Polarization Characteristics of a Grating-Gate Plasmonic THz Detector Masaya Suzuki, Tomotaka Hosotani, Tetsuya Suemitsu (Tohoku Univ.), Yuma Takida, Hiromasa Ito, Hiroaki Minamide (RIKEN), Taiich Otsuji, Akira Satou (Tohoku Univ.) ED2018-64 |
[more] | ED2018-64 pp.43-46 |
| ED, THz | 2017-12-19 10:05 |
Miyagi | RIEC, Tohoku Univ | Optical-to-MMW Carrier-Frequency Down-Conversion by InP-HEMT Yuya Omori, Tomotaka Hosotani, Taichi Otsuji, Katsumi Iwatsuki, Tetsuya Suemitsu (Tohoku Univ), Kaoru Higuma, Junichiro Ichikawa (Sumitomo Osaka Cement), Takahide Sakamoto, Naokatsu Yamamoto (NICT), Akira Satou (Tohoku Univ) ED2017-83 |
[more] | ED2017-83 pp.41-45 |
| SDM, ED, CPM | 2017-05-26 10:45 |
Aichi | VBL, Nagoya University | N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE Kiattiwut Prasertsuk, Tomoyuki Tanikawa, Takeshi Kimura, Shigeyuki Kuboya, Tetsuya Suemitsu, Takashi Matsuoka (Tohoku Univ.) ED2017-26 CPM2017-12 SDM2017-20 |
An N-polar GaN high electron mobility transistor (HEMT) has an advantage over a Ga-polar HEMT from viewpoints of a poten... [more] | ED2017-26 CPM2017-12 SDM2017-20 pp.59-64 |
| ED | 2016-12-19 16:30 |
Miyagi | RIEC, Tohoku Univ | Improvement of light receiving efficiency of Asymmetric-Dual-Grating-Gate High-Electron-Mobility-Transistor by series array and lens integration Tomotaka Hosotani, Fuzuki Kasuya, Hiroki Taniguchi, Takayuki Watanabe, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.), Yuma Takida, Hiromasa Ito, Hiroaki Minamide (RIKEN), Tadao Ishibashi (NTT Electronics Techno), Makoto Shimizu (NEL), Akira Satou (Tohoku Univ.) ED2016-84 |
Asymmetric-dual-grating-gate high-electron-mobility-transistors (ADGG-HEMTs) are expected for room-temperature operating... [more] | ED2016-84 pp.23-28 |
| CS, OCS (Joint) |
2016-01-22 09:50 |
Kagoshima | Kagoshima University, Korimoto Campus, Inamori Auditorium | Sub-THz Photonic Frequency Conversion Using Graphene and InP-Based Transistors for Future Fully Coherent Access Network Kenta Sugawara, Gen Tamamushi, Adrian Dobroiu, Tomohiro Yoshida, Tetsuya Suemitsu, Hirokazu Fukidome, Maki Suemitsu, Ryzhii Victor, Katsumi Iwatsuki (Tohoku Univ.), Shigeru Kuwano, Jun-ichi Kani, Jun Terada (NTT), Taiichi Otsuji (Tohoku Univ.) OCS2015-95 |
The feasibility of graphene-channel field effect transistors (G-FETs) and InP based high electron mobility transistors (... [more] | OCS2015-95 pp.41-46 |
| WPT, MW | 2015-04-16 15:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Design of a 60GHz InGaAs HEMT class-F power amplifier with reactive negative feedback Kunihiko Watanabe, Yohtaro Umeda (Tokyo Univ. of Science), Tomohiro Yoshida, Tetsuya Suemitsu (Tohoku Univ.) WPT2015-4 MW2015-4 |
In this paper, InGaAs HEMT 60GHz Class-F power amplifier (PA) with reactive negative feedback is designed and simulated.... [more] | WPT2015-4 MW2015-4 pp.15-19 |
| ED | 2014-12-22 14:10 |
Miyagi | Millimeterwave-photomixing by InGaAs channel HEMT and graphene channel FETs Tetsuya Kawasaki, Tomohiro Yoshida, Kenta Sugawara, Adrian Dobroiu, Takayuki Watanabe, Hiroki Sugiyama, Hiroyuki Wakou (Tohoku Univ.), Jun-ichi Kani, Jun Terada, Shigeru Kuwano (NTT), Hiroki Ago, Kenji Kawahara (Kyushu Univ.), Katsumi Iwatsuki, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2014-100 |
We experimentally investigated the photomixing function in the millimeter wave range by using InGaAs channel high electr... [more] | ED2014-100 pp.9-13 |
|
| ED | 2014-12-23 10:05 |
Miyagi | Broadband characteristics of plasmonic terahertz detection using asymmetric dual-grating-gate high-electron-mobility transistors Akira Satou, Stephane Bobanga Tombet, Takayuki Watanabe, Tetsuya Kawasaki, Tetsuya Suemitsu (Tohoku Univ.), Denis V Fateev, Vyacheslav V Popov (IREE), Hiroaki Minamide, Hiromasa Ito (RIKEN), Dominique Coquillat, Wojciech Knap (Univ. Montpellier 2), Guillaume Ducournau (IEMN), Taiichi Otsuji (Tohoku Univ.) ED2014-109 |
We compare the measured broadband characteristics of the responsivity of asymmetric dual-grating-gate high-elect... [more] | ED2014-109 pp.63-67 |
|
| MW | 2014-03-05 14:45 |
Ehime | Ehime University | 60-GHz-Band Class-F Amplifier with InGaAs HEMT Masashi Oyama, Toshiki Kishi, Yohtaro Umeda (Tokyo Univ. of Science), Tomohiro Yoshida, Tetsuya Suemitsu (Tohoku Univ.) MW2013-220 |
[more] | MW2013-220 pp.133-138 |
| ED | 2013-12-17 14:10 |
Miyagi | Research Institute of Electrical Communication Tohoku University | Ultrahigh Sensitive and Frequency-Tunable Terahertz Detection by Asymmetric Dual-Grating-Gate HEMTs Tetsuya Kawasaki, Shinya Hatakeyama, Yuki Kurita (Tohoku Univ.), Guillaume Ducournau (IEMN), Dominique Coquillat (Univ. Montpellier 2 & CNRS), Kengo Kobayashi, Akira Satou (Tohoku Univ.), Yahya M. Meziani (Univ. Salamanca), Vyacheslav. V. Popov (Kotelnikov Inst. Radio Eng. Electron), Wojciech Knap (Univ. Montpellier 2 & CNRS), Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2013-107 |
We report on ultrahigh sensitive and frequency-tunable terahertz (THz) detectors by our original asymmetric dual-grating... [more] | ED2013-107 pp.97-100 |
| MW, ED | 2013-01-18 14:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | AlGaN/GaN MIS-Gate HEMTs with SiCN Gate Stacks Kengo Kobayashi, Tomohiro Yoshida, Taiichi Otsuji, Ryuji Katayama, Takashi Matsuoka, Tetsuya Suemitsu (Tohoku Univ.) ED2012-126 MW2012-156 |
This paper reports AlGaN/GaN metal-insulator-semiconductor (MIS)-gate high electron mobility transistors (HEMTs) with a ... [more] | ED2012-126 MW2012-156 pp.75-78 |
| MW, ED | 2013-01-18 15:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | InGaAs HEMTs with T-gate electrodes formed by multi-layer SiCN molds Tomohiro Yoshida, Kengo Kobayashi, Taiichi Otsuji, Tetsuya Suemitsu (Tohoku Univ.) ED2012-127 MW2012-157 |
Recently, the gate lengths of HEMTs have been achieved below 0.1 $\mu$m. In general, T-gate electrodes are employed for ... [more] | ED2012-127 MW2012-157 pp.79-84 |
| ED | 2012-07-27 11:50 |
Fukui | Fukui University | Graphene FET with Diamondlike Carbon Dielectrics Susumu Takabayashi, Meng Yang, Shuichi Ogawa, Hiroyuki Hayashi, Yuki Kurita, Yuji Takakuwa, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2012-53 |
A graphene-channel field effect transistor with a diamondlike carbon (DLC) top-gate dielectric film is presented (DLC-GF... [more] | ED2012-53 pp.67-72 |
| ED, SDM | 2010-06-30 14:50 |
Tokyo | Tokyo Inst. of Tech. Ookayama Campus | [Invited Talk]
Graphene channel FET: A New Candidate for High-Speed Devices Tetsuya Suemitsu (Tohoku Univ.) ED2010-67 SDM2010-68 |
Graphene is a single layer of graphite and is now one of exciting area of research because of its potential of high carr... [more] | ED2010-67 SDM2010-68 pp.69-72 |
| ED | 2009-11-30 09:50 |
Osaka | Osaka Science & Technology Center | Multichip Operation of Plasmon-Resonant Microchip Emitter for Broadband Terahertz Spectroscopic Measurement Takayuki Watanabe, Tsuneyoshi Komori, Tetsuya Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2009-168 |
We have experimentally observed the emission of broadband terahertz radiation with a microwatt power at room temperature... [more] | ED2009-168 pp.47-51 |
| SDM, ED | 2009-02-26 13:30 |
Hokkaido | Hokkaido Univ. | [Invited Talk]
Epitaxial Graphene Grown on Si Substrate and Its Applications to Electron Devices Taiichi Otsuji, Tetsuya Suemitsu, Hyon-Choru Kang, Hiromi Karasawa, Yuu Miyamoto, Hiroyuki Handa, Maki Suemitsu (Tohoku Univ.), Eiichi Sano (Hokkaido Univ.), Maxim Ryzhii, Victor Ryzhii (Univ. of Aizu) ED2008-224 SDM2008-216 |
This paper reviews recent advances in graphene material epitaxially grown on Si substrate and its applications to electr... [more] | ED2008-224 SDM2008-216 pp.1-6 |
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