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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, LQE, CPM | 2012-11-29 11:30 |
Osaka | Osaka City University | Estimation of Surface Fermi level differences in surface-modified GaN crystals Yohei Sugiura, Ryosuke Amiya, Daiki Tajimi (Kogakuin Univ.), Takeyoshi Onuma (TNCT), Tomohiro Yamaguchi, Tohru Honda (Kogakuin Univ.)  ED2012-68 CPM2012-125 LQE2012-96 |
Surface-Fermi-level differences in hexagonal (0001)GaN as a function of the amount of surface oxides were estimated usin... [more] | ED2012-68 CPM2012-125 LQE2012-96 pp.13-15 |
| CPM, LQE, ED | 2010-11-11 10:50 |
Osaka | GaN growth on pseudo (111)Al substrates by RF-MBE Tohru Honda, Masato Hayashi, Taiga Goto, Tatsuhiro Igaki (Kogakuin Univ.) ED2010-144 CPM2010-110 LQE2010-100 |
Fabrication of integrated light-emitting devices based on GaN requires a vertical carrier injection. In the case, GaN gr... [more] | ED2010-144 CPM2010-110 LQE2010-100 pp.11-14 |
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| ED, LQE, CPM | 2009-11-19 16:45 |
Tokushima | Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) | Fabrication of red, green and blue emitters using GaN-based UV Light-emitting diodes with Schottky-type structures Tohru Honda, Tadashi Nozaki, Naoyuki Sakai, Kazuyuki Noguchi (Kogakuin Univ.) ED2009-143 CPM2009-117 LQE2009-122 |
[more] | ED2009-143 CPM2009-117 LQE2009-122 pp.71-74 |
| LQE, ED, CPM | 2008-11-27 13:35 |
Aichi | Nagoya Institute of Technology | Reduction of reverse-bias current in GaN-based metal-oxide-semiconductor diodes operating in UV spectral region Tohru Honda, Shigetoshi Komiyama, Yoshihiro Mashiyama, Kenji Watanabe (Kogakuin Univ.) ED2008-159 CPM2008-108 LQE2008-103 |
The reduction of reverse-bias leakage current in GaN-based Schottky diodes was investigated using an aluminum facepack t... [more] | ED2008-159 CPM2008-108 LQE2008-103 pp.33-36 |
| CPM, ED, LQE | 2007-10-11 14:30 |
Fukui | Fukui Univ. | Fabrication of GaN-based UV LEDs with metal, oxide and GaN stacks Shigetoshi Komiyama, Kazuyuki Noguchi, Yoshihiro Mashiyama, Kaori Yoshioka, Tohru Honda (Kogakuin Univ.) |
[more] | |
| CPM, ED, LQE | 2007-10-12 16:05 |
Fukui | Fukui Univ. | Fabrication of MgZnO films by molecular precursor method and its application to UV-transparent electrodes Yoshihiro Mashiyama, Kaori Yoshioka, Shigetoshi Komiyama, Shinsuke Adachi, Mitsunobu Satou, Tohru Honda (Kogakuin Univ.) |
[more] | |
| ED, CPM, LQE | 2006-10-06 13:15 |
Kyoto | Fabrication of GaN-based unipolar UV LEDs grown by MOVPE Toshiaki Kobayashi, Shigetoshi Komiyama, Yoshihiro Mashiyama, Tohru Honda (Kogakuin Univ.) |
[more] | ED2006-167 CPM2006-104 LQE2006-71 pp.83-86 |
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| ED, CPM, LQE | 2006-10-06 14:05 |
Kyoto | GaN films deposited by CS-MBD with pulsed source feeding Masatoshi Arai, Koichi Sugimoto, Shinichi Egawa, Taichi Baba, Masaru Sawada, Tohru Honda (Kogakuin Univ.) |
GaN films were deposited at low temperature by compound-source molecular beam deposition (CS-MBD) with pulsed-source fee... [more] | ED2006-169 CPM2006-106 LQE2006-73 pp.93-96 |
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| LQE, ED, CPM | 2005-10-14 09:40 |
Shiga | Ritsumeikan Univ. | Low temperature deposition of AlN films by compound source MBE technique Toshiaki Kobayashi, Kouji Hirayama, Shinichi Egawa, Miwako Akiyama, Koichi Sugimoto, Taichi Baba, Tohru Honda, Hideo Kawanishi (Kogakuin Univ.) |
[more] | ED2005-141 CPM2005-128 LQE2005-68 pp.9-12 |
| LQE, ED, CPM | 2005-10-14 10:00 |
Shiga | Ritsumeikan Univ. | Fabrication processes of UV electroluminescent devices based on GaN crystallites Taichi Baba, Miwako Akiyama, Shinichi Egawa, Toshiaki Kobayashi, Noriyuki Hasunuma, Tohru Honda, Hideo Kawanishi (Kogakuin Univ.) |
[more] | ED2005-142 CPM2005-129 LQE2005-69 pp.13-16 |
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