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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2018-06-25
11:20		 Aichi Nagoya Univ. VBL3F Comparative study of SiO2/GaN interface structures and properties between Ar and He as a mixture gas with oxygen for remote plasma chemical vapor deposition
Nguyen Xuan Truyen (Nagoya Univ.), Noriyuki Taoka (AIST-NU GaN-OIL), Akio Ohta (Nagoya Univ.), Hisashi Yamada, Tokio Takahashi (AIST-NU GaN-OIL), Mitsuhisa Ikeda, Makihara Katsunori (Nagoya Univ.), Mitsuaki Shimizu (AIST-NU GaN-OIL), Seiichi Miyazaki (Nagoya Univ.) SDM2018-17		  [more] SDM2018-17
pp.5-9
SDM 2018-06-25
11:40		 Aichi Nagoya Univ. VBL3F Control of SiO2/GaN Interface for High-performance GaN MOSFET
Tauji Hosoi, Takahiro Yamada, Mikito Nozaki (Osaka Univ.), Tokio Takahashi, Hisashi Yamada, Mitsuaki Shimizu (AIST), Akitaka Yoshigoe (JAEA), Takayoshi Shimura, Heiji Watanabe (Osaka Univ.) SDM2018-18		 A high-quality gate insulator together with low interface states is indispensable for GaN-based power MOSFETs. We have r... [more] SDM2018-18
pp.11-14
LQE, CPM, ED 2017-12-01
12:30		 Aichi Nagoya Inst. tech. Characterization of Chemical Structure and Electrical Properties of Remote O2 Plasma Enhanced CVD SiO2/GaN(0001) structures
NguyenXuan Truyen (Nagoya Univ.), Noriyuki Taoka (AIST GaN OIL), Akio Ohta (Nagoya Univ.), Hisashi Yamada, Tokio Takahashi (AIST GaN OIL), Mitsuhisa Ikeda, Katsunori Makihara (Nagoya Univ.), Mitsuaki Shimizu (AIST GaN OIL), Seiichi Miyazaki (Nagoya Univ.) ED2017-61 CPM2017-104 LQE2017-74		 Impacts of post-deposition annealing (PDA) on interface properties in a SiO2/GaN structure formed by a remote oxygen pla... [more] ED2017-61 CPM2017-104 LQE2017-74
pp.61-64
 Results 1 - 3 of 3  /   
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