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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2007-11-17
09:25		 Niigata Nagaoka University of Technology Formation and control of Ge, SiC nanodots on Si(001)-2x1 surface using monomethylgermane
Tomoaki Ogiwara, Haruki Suto, Kanji Yasui, Tadashi Akahane, Masasuke Takata (NUT) CPM2007-116		 Formation of high-density nano-dots using monomethylgermane (MMGe) on Si (001)-$2^{o}$off surface was investigated. By t... [more] CPM2007-116
pp.59-64
CPM 2006-11-10
09:50		 Ishikawa Kanazawa Univ. Formation of high density nanodots aiming for Ge embedded SiC
Tetsushi Kanemaru, Tomoaki Ogiwara, Kanji Yasui, Tadashi Akahane, Masasuke Takata (Nagaoka Univ. Tech.) 		 [more] CPM2006-124
pp.65-70
CPM 2005-11-11
14:45		 Fukui   Changes of surface structures during reactions of monomethylgermane on Si(001) -- Toward to fabrication of Ge embedded in SiC structure --
Masayuki Harashima, Tetsushi Kanemaru, Ariyuki Kato, Tomoaki Ogiwara, Kanji Yasui, Tadashi Akahane, Masasuke Takata (Nagaoka Univ. of Technol.) 		Initial stage of surface reactions between monomethylgermane (MMGe:
GeH$_3$CH$_3$) and Si(001) surfaces has been analy... [more]		 CPM2005-155
pp.19-24
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