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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW (2nd) |
2016-06-09 - 2016-06-11 |
Overseas | KMUTNB, Bangkok, Thailand | Gain Enhancement of 140 GHz CMOS On-chip Antenna with Optimal Ion-Irradiated-Silicon Junji Sato, Tomohiro Murata (Panasonic) |
This paper presents the gain enhancement techniques for a 140 GHz CMOS on-chip antenna. The proposed CMOS on-chip folded... [more] | |
| ED, MW | 2012-01-12 14:30 |
Tokyo | Kikai-Shinko-Kaikan Bldg | High current and high voltage GaN-based multi-junction diode with p-type barrier controlling layer Daisuke Shibata, Kazuhiro Kaibara, Tomohiro Murata, Yasuhiro Yamada, Tatsuo Morita, Yoshiharu Anda, Masahiro Ishida, Hidetoshi Ishida, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Panasonic)  ED2011-137 MW2011-160 |
[more] | ED2011-137 MW2011-160 pp.101-105 |
| ED | 2010-12-17 10:35 |
Miyagi | Tohoku University (Research Institute of Electrical Communication) | [Invited Talk]
GaN Devices on Low Cost Substrates for Long-distance Millimeter-wave Communication Hiroyuki Sakai, Masayuki Kuroda, Noboru Negoro, Tomohiro Murata, Shuichi Nagai, Masaaki Nishijima, Yoshiharu Anda, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2010-167 |
We present GaN Devices on low cost substrates for long-distance millimeter-wave communication. Sapphire substrates are u... [more] | ED2010-167 pp.53-58 |
| MW, ED | 2009-01-16 10:20 |
Tokyo | Kikai-Shinko-Kaikan Bldg | AlGaN/GaN MIS-HFETs Using In-situ SiN as Gate Insulators Masayuki Kuroda, Tomohiro Murata, Satoshi Nakazawa, Toshiyuki Takizawa, Masaaki Nishijima, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka (Panasonic) ED2008-220 MW2008-185 |
AlGaN/GaN heterojunction transistors (HFETs) are promising for high frequency and high power applications owing to the h... [more] | ED2008-220 MW2008-185 pp.125-128 |
| AI, IPSJ-DC | 2008-11-28 15:10 |
Okinawa | A Basic Consideration on Automatic Construction Method of Ontology from Web Resource Tomohiro Murata, Ryoji Akimoto, Wataru Kameyama (Waseda Univ.) |
Recently, web resource has increased. And, it is being organized and used by several methodologies. In such a situation,... [more] | AI2008-40 pp.97-102 |
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| MW | 2008-08-28 14:20 |
Osaka | Osaka-Univ. (Toyonaka) | K-band AlGaN/GaN-based MMICs on sapphire substrates Tomohiro Murata, Masayuki Kuroda (Matsushita), Shuichi Nagai (PBL), Masaaki Nishijima, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Hiroyuki Sakai, Tsuyoshi Tanaka (Matsushita), Ming Li (PBL) MW2008-85 |
We present K-band AlGaN/GaN HFET MMIC amplifiers with integrated microstrip lines on sapphire substrates. The microstrip... [more] | MW2008-85 pp.37-40 |
| MW | 2008-08-29 16:00 |
Osaka | Osaka-Univ. (Toyonaka) | [Special Talk]
Report of IMS2008 Toshio Ishizaki (Matsushita), Akira Tsuchiya (Kyoto Univ.), Tomohiro Murata (Matsushita), Satoshi Matsumoto (Furuno), Tadashi Kawai (Univ. Hyogo), Mitsuhiro Shimozawa (Mitsubishi Elec.) MW2008-102 |
IMS2008 was held in Atlanta, GA, from June 15th to 20th. The authors report the summary of presentations in MTT symposiu... [more] | MW2008-102 pp.129-134 |
| SDM, ED | 2008-07-11 14:20 |
Hokkaido | Kaderu２・７ | AlGaN/GaN-based Millimeter Wave Monolithic ICs with Laser-Drilled Via-holes Through Sapphire Tomohiro Murata, Masayuki Kuroda (Matsushita Electric Industrial), Shuichi Nagai (Panasonic Boston Lab.), Masaaki Nishijima, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Hiroyuki Sakai, Tsuyoshi Tanaka (Matsushita Electric Industrial), Ming Li (Panasonic Boston Lab.) ED2008-103 SDM2008-122 |
We present K-band AlGaN/GaN HFET MMIC amplifiers on sapphire substrates. Integrated AlGaN/GaN HFETs have superlattice ca... [more] | ED2008-103 SDM2008-122 pp.331-335 |
| ED, SDM | 2007-06-25 13:00 |
Overseas | Commodore Hotel Gyeongju Chosun, Gyeongju, Korea | [Invited Talk]
AlGaN/GaN Power Transistors for power switching applications Yasuhiro Uemoto, Masahiro Hikita, Hiroaki Ueno, Tomohiro Murata, Hisayoshi Matsuo, Hidetoshi Ishida, Manabu Yanagihara, Tetsuzo Ueda, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita) |
Recently developed normally-off transistor named GIT (Gate Injection Transistor) and novel passivation technique using p... [more] | |
| ED, SDM, R | 2006-11-24 16:30 |
Osaka | Central Electric Club | Surface Passivation of AlGaN/GaN HFETs by a Sputtered AlN Thin Film Hiroaki Ueno, Tomohiro Murata, Hidetoshi Ishida, Tetsuzo Ueda, Yasuhiro Uemoto, Tsuyoshi Tanaka, Kaoru Inoue (Panasonic) |
[more] | R2006-38 ED2006-183 SDM2006-201 pp.39-42 |
| MW, ED | 2005-11-17 13:35 |
Saga | A K-band AlGaN/GaN HFET MMIC Amplifier on Sapphire using novel superlattice cap layer Masaaki Nishijima, Tomohiro Murata, Yutaka Hirose, Masahiro Hikita, Noboru Negoro, Hiroyuki Sakai, Yasuhiro Uemoto, Kaoru Inoue, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric) |
We have developed a K-band AlGaN/GaN HFET MMIC amplifier by applying an AlGaN/GaN superlattice (SL) capped structure on ... [more] | ED2005-165 MW2005-120 pp.39-43 |
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| MW, ED | 2005-01-18 10:10 |
Tokyo | - Tomohiro Murata, Masahiro Hikita, Yutaka Hirose, Kaoru Inoue, Yasuhiro Uemoto, Tsuyoshi Tanaka, Daisuke Ueda (Matsushita Electric) |
[more] | ED2004-214 MW2004-221 pp.13-17 |
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