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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2016-06-29
11:55		 Tokyo Campus Innovation Center Tokyo Effect of Al2O3layer on leakage current properties for DRAM capacitor with ZrO2/Al2O3/ZrO2multilayer
Takashi Onaya (Meiji Univ./NIMS), Toshihide Nabatame, Tomomi Sawada (NIMS/JST-CREST), Kazunori Kurishima (Meiji Univ./NIMS), Naomi Sawamoto (Meiji Univ.), Akihiko Ohi, Toyohiro Chikyo (NIMS), Atsushi Ogura (Meiji Univ.) SDM2016-37		 We studied characteristic of DRAM capacitors with ZrO2/Al2O3/ZrO2 (ZAZ) multilayer fabricated by atomic layer deposition... [more] SDM2016-37
pp.27-32
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