|
|
All Technical Committee Conferences (Searched in: All Years)
|
|
Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
|
Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2010-06-22 13:45 |
Tokyo |
An401・402 Inst. Indus. Sci., The Univ. of Tokyo |
High Temperature Rapid Thermal Annealing of Rare-Earth Oxides Dielectrics for Highly Scaled Gate Stack of EOT=0.5 nm Daisuke Kitayama, Tomotsune Koyanagi, Kuniyuki Kakushima, Parhat Ahmet, Kazuo Tsutsui, Akira Nishiyama, Nobuyuki Sugii, Kenji Natori, Takeo Hattori, Hiroshi Iwai (Tokyo Inst. of Tech.) SDM2010-41 |
A direct contact of high-k/Si substrate (without SiO<sub>2</sub> interfacial layer structure) is required for achieving ... [more] |
SDM2010-41 pp.43-48 |
|
|
|
Copyright and reproduction :
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
|
[Return to Top Page]
[Return to IEICE Web Page]
|