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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, OME 2010-04-23
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Characterization of Sputtered-Si Films for Photo-Sensor Diodes
Jean de Dieu Mugiraneza, Tomoyuki Miyahira, Akinori Sakamoto, Takashi Noguchi (Univ. of Ryukyus), Ching-Ping Chiu, Meng-Hsin Chen, Wen-Chang Yeh (NTUST) SDM2010-8 OME2010-8
 [more] SDM2010-8 OME2010-8
SDM, ED 2009-06-25
Overseas Haeundae Grand Hotel, Busan, Korea Effective Annealing for Si film
Takashi Noguchi, Tomoyuki Miyahira, Yeh Chen, Jean de dieu Mugiraneza (Univ. of Ryukyus) ED2009-85 SDM2009-80
 [more] ED2009-85 SDM2009-80
OME, SDM 2009-04-24
Saga AIST Kyushu-center Crystallization and annealing of heavily doped p-type Si film and electronic properties
Takashi Noguchi, Tomoyuki Miyahira (Univ. of the Ryukyus), Toshiharu Suzuki (SEN) SDM2009-6 OME2009-6
 [more] SDM2009-6 OME2009-6
SDM, OME 2008-04-11
Okinawa Okinawa Seinen Kaikan Electrical activation of heavily doped Si film by crystallization annealing
Takashi Noguchi, Tomoyuki Miyahira, Kenji Kawai (Univ. Ryukyus), Toshiharu Suzuki, Masateru Sato (SEN) SDM2008-4 OME2008-4
After UV pulsed excimer laser annealing for highly
boron-, or phosphorus dosed Si film, the relationship
between the c... [more]
SDM2008-4 OME2008-4
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