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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, CPM, ED | 2020-11-27 14:10 |
Online | Online | First demonstration of InGaN QW tunable single-mode laser with periodically slotted structure Masahiro Uemukai, Akihiro Higuchi, Tomoyuki Tanikawa, Ryuji Katayama (Osaka Univ.)  ED2020-21 CPM2020-42 LQE2020-72 |
Nitride semiconductors such as GaN and AlN have strong optical nonlinearity, and they can be applied to nonlinear optica... [more] | ED2020-21 CPM2020-42 LQE2020-72 pp.79-82 |
| SDM, ED, CPM | 2017-05-26 10:45 |
Aichi | VBL, Nagoya University | N-polar GaN MIS-HEMTs with Flat Interface Grown by Optimized MOVPE Kiattiwut Prasertsuk, Tomoyuki Tanikawa, Takeshi Kimura, Shigeyuki Kuboya, Tetsuya Suemitsu, Takashi Matsuoka (Tohoku Univ.) ED2017-26 CPM2017-12 SDM2017-20 |
An N-polar GaN high electron mobility transistor (HEMT) has an advantage over a Ga-polar HEMT from viewpoints of a poten... [more] | ED2017-26 CPM2017-12 SDM2017-20 pp.59-64 |
| ED | 2015-07-24 13:15 |
Ishikawa | IT Business Plaza Musashi 5F | Electrical characteristics of N-polar p-type GaN Schottky contacts Toshichika Aoki (Univ. of Fukui), Tomoyuki Tanikawa, Ryuji Katayama, Takashi Matsuoka (Tohoku Univ.), Kenji Shiojima (Univ. of Fukui) ED2015-36 |
Electrical characteristics of N-polar p-GaN Schottky contacts by using current-voltage (I-V), capacitance-voltage (C-V) ... [more] | ED2015-36 pp.1-4 |
| ED, SDM, CPM | 2012-05-17 14:30 |
Aichi | VBL, Toyohashi Univ. of Technol. | Polarization properties in InGaN/GaN multiple quantum well on semipolar (1-101)GaN/Si Maki Kushimoto, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.) ED2012-20 CPM2012-4 SDM2012-22 |
We grew High-quality semipolar (1-101) GaN stripes on a Si substrate through Selective area growth (SAG) and regrow InGa... [more] | ED2012-20 CPM2012-4 SDM2012-22 pp.15-18 |
| CPM, SDM, ED | 2011-05-19 15:15 |
Aichi | Nagoya Univ. (VBL) | MOVPE growth of thick InGaN on (1-101)GaN/Si Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Nobuhiko Sawaki (Aichi Inst. of Tech) ED2011-13 CPM2011-20 SDM2011-26 |
We demonstrated thick InGaN growth on (1-101)GaN/Si. The grown samples had relative smooth surface with RMS value of les... [more] | ED2011-13 CPM2011-20 SDM2011-26 pp.63-66 |
| CPM, SDM, ED | 2011-05-20 11:15 |
Aichi | Nagoya Univ. (VBL) | Aging test of AlGaN-based ultraviolet light emitting diodes
-- The Degradation Mechanism of UV-LED -- Park Gwi Jin, Takayuki Sugiyama, Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi, Hiroshi Amano (Nagoya Univ.), Tetsuhiko Inazu, Takehiko Fujita, Cyril Pernot, Akira Hirano (UV Craftory) ED2011-24 CPM2011-31 SDM2011-37 |
[more] | ED2011-24 CPM2011-31 SDM2011-37 pp.123-126 |
| ED, SDM | 2010-02-22 14:50 |
Okinawa | Okinawaken-Seinen-Kaikan | MOVPE Growth of InGaN/GaN MQW on a Polar, Semi-polar, and Non-polar GaN Stripes by Selective MOVPE Tomoyuki Tanikawa, Yoshio Honda, Masahito Yamaguchi (Nagoya Univ.) ED2009-200 SDM2009-197 |
We investigated the InGaN/GaN multiple quantum well (MQW) thickness and luminescence distribution on non c-plane GaN str... [more] | ED2009-200 SDM2009-197 pp.23-28 |
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