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All Technical Committee Conferences (Searched in: All Years)
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| Search Results: Conference Papers |
| Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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| Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
| ICD |
2018-04-20
11:10 |
Tokyo |
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[Invited Talk]
A 512Gb 3b/Cell 3D Flash Memory on a 96-Word-Line-Layer Technology
Hiroshi Maejima, Kazushige Kanda, Susumu Fujimura, Teruo Takagiwa, Susumu Ozawa, Jumpei Sato, Yoshihiko Shindo, Manabu Sato, Naoaki Kanagawa, Junji Musha, Satoshi Inoue, Katsuaki Sakurai, Toshifumi Hashimoto (TMC), Hao Nguyen, Ken Cheah, Hiroshi Sugawara, Seungpil Lee (WDC), Toshiki Hisada, Tetsuya Kaneko, Hiroshi Nakamura (TMC)  ICD2018-10 |
A 512Gb 3b/cell flash has been developed on a 96-WL-layer BiCS FLASH technology. This work implements three key technolo... [more] |
ICD2018-10
pp.39-44 |
| ICD |
2009-04-14
13:00 |
Miyagi |
Daikanso (Matsushima, Miyagi) |
[Invited Talk]
A 113mm2 32Gb 3bit/Cell NAND Flash Memory and Recent Technology Trend of NAND Flash Memory
Takuya Futatsuyama, Norihiro Fujita, Naoya Tokiwa, Yoshihiko Shindo, Toshiaki Edahiro (Toshiba Corp.), Teruhiko Kamei, Hiroaki Nasu (SanDisk), Makoto Iwai, Koji Kato, Yasuyuki Fukuda, Naoaki Kanagawa, Naofumi Abiko (Toshiba Corp.), Masahide Matsumoto (SanDisk), Toshihiko Himeno, Toshifumi Hashimoto (Toshiba Corp.) ICD2009-8 |
A 113mm2 32Gbit 3bit/cell (8-levels) NAND Flash memory using 32nm CMOS technology is developed. This 32Gbit Flash die is... [more] |
ICD2009-8
pp.39-42 |
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