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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 15 of 15  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
MI 2019-01-23
10:15
Okinawa   MI2018-89  [more] MI2018-89
pp.121-126
PRMU, MVE, IPSJ-CVIM [detail] 2018-01-18
09:55
Osaka  
Seina Kamada (Kyushu Univ.), Taisuke Sato, Toshiharu Suzuki (Hokkaido Univ.), Seiichi Uchida (Kyushu Univ.) PRMU2017-113 MVE2017-34
(To be available after the conference date) [more] PRMU2017-113 MVE2017-34
pp.9-14
PRMU, MVE, IPSJ-CVIM [detail] 2018-01-18
17:15
Osaka  
Teruaki Fujiyoshi (Kyushu Univ.), Rika Motodate, Toshiharu Suzuki (Hokkaido Univ.), Seiichi Uchida (Kyushu Univ.) PRMU2017-127 MVE2017-48
(To be available after the conference date) [more] PRMU2017-127 MVE2017-48
pp.129-134
PRMU, MI, IE, SIP 2015-05-15
10:30
Mie   *
Masayuki Noguchi (Kyushu Univ.), Rika Motodate, Toshiharu Suzuki (Hokkaido Univ.), Seiichi Uchida (Kyushu Univ.) SIP2015-16 IE2015-16 PRMU2015-16 MI2015-16
(To be available after the conference date) [more] SIP2015-16 IE2015-16 PRMU2015-16 MI2015-16
pp.83-88
PRMU 2013-10-04
16:10
Chiba   Particle Tracking Using Network Flow
Kensho Fujisaki, Yaokai Feng, Seiichi Uchida (Kyushu Univ.), Masahiko Araseki, Yuki Saito, Toshiharu Suzuki (Hokkaido Univ.) PRMU2013-64
 [more] PRMU2013-64
pp.41-46
SDM, OME 2012-04-27
16:10
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Control of Crystallization Behavior of Silicon Thin Films by Semiconductor Blue-Multi-Diode-Laser Annealing
Katsuya Shirai, Jean de Dieu Mugiraneza, Toshiharu Suzuki, Tatsuya Okada, Takashi Noguchi (Univ. of the Ryukyus), Hideki Matsushima, Takao Hashimoto, Yoshiaki Ogino, Eiji Sahota (Hitachi CP) SDM2012-7 OME2012-7
 [more] SDM2012-7 OME2012-7
pp.33-36
SDM, OME 2012-04-27
16:30
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Crystallization of Si Thin Film on Poly-Imide Substrate by Semiconductor Blue Multi-Laser Diode Annealing
Tatsuya Okada, Jean de Dieu Mugiraneza, Katsuya Shirai, Toshiharu Suzuki, Takashi Noguchi (Univ. Ryukyus), Hideki Matsushima, Takao Hashimoto, Yoshiaki Ogino, Eiji Sahota (Hitachi CP) SDM2012-8 OME2012-8
Crystallization of a-Si films on polyimide substrate was achieved using Blue Multi-Laser Diode Annealing. Surface roughn... [more] SDM2012-8 OME2012-8
pp.37-39
SDM, OME 2012-04-28
11:50
Okinawa Okinawa-Ken-Seinen-Kaikan Bldg. Crystallization of the Sputtered P-doped Si Films for High Performance Poly-Si TFT
Takuma Nishinohara, J. D. Mugiraneza, Katsuya Shirai, Toshiharu Suzuki, Tatsuya Okada, Takashi Noguchi (Univ. of the Ryukyus), Tadashi Ohachi (Doshisha Univ.), Hideki Matsushima, Takao Hashimoto, Yoshiaki Ogino, Eiji Sahota (Hitachi CP) SDM2012-18 OME2012-18
After performing BLDA for phosphorus-doped Si films deposited by sputtering using Ne gas, the crystallinity of the films... [more] SDM2012-18 OME2012-18
pp.79-82
PRMU, SP 2012-02-09
14:45
Miyagi   A denoising technique
Kenta Aoki, Kensho Fujisaki, Yaokai Feng, Seiichi Uchida (Kyushu Univ.), Masahiko Araseki, Yuki Saito, Toshiharu Suzuki (Hokkaido Univ.) PRMU2011-201 SP2011-116
(To be available after the conference date) [more] PRMU2011-201 SP2011-116
pp.91-96
PRMU, SP 2012-02-10
15:50
Miyagi   Particle Tracking
Kensho Fujisaki, Kenta Aoki, Yaokai Feng, Seiichi Uchida (Kyushu Univ.), Masahiko Araseki, Yuki Saito, Toshiharu Suzuki (Hokkaido Univ.) PRMU2011-232 SP2011-147
(To be available after the conference date) [more] PRMU2011-232 SP2011-147
pp.207-212
PRMU, FM 2010-12-09
10:00
Yamaguchi   Detection of Granular Objects in Cell by Learning
Kenta Aoki, Yaokai Feng, Seiichi Uchida (Kyushu Univ.), Masahiko Araseki, Yuki Saito, Toshiharu Suzuki (Hokkaido Univ.) PRMU2010-127
By the development of the microscope, it is now possible to observe the moving APP-GFPs in cells. By observing their mo... [more] PRMU2010-127
pp.7-12
ED, SDM 2010-07-02
10:00
Tokyo Tokyo Inst. of Tech. Ookayama Campus Acivation behaviour for doped Si films after laser or furnace annealing
Takashi Noguchi, Toshiharu Suzuki (Univ. of Ryukyus) ED2010-85 SDM2010-86
After excimer laser annealing (ELA) for heavily boron- or phosphorous-doped Si films, the relation between the conductiv... [more] ED2010-85 SDM2010-86
pp.149-153
OME, SDM 2009-04-24
16:40
Saga AIST Kyushu-center Crystallization and annealing of heavily doped p-type Si film and electronic properties
Takashi Noguchi, Tomoyuki Miyahira (Univ. of the Ryukyus), Toshiharu Suzuki (SEN) SDM2009-6 OME2009-6
 [more] SDM2009-6 OME2009-6
pp.25-28
SDM, ED 2008-07-09
13:45
Hokkaido Kaderu2・7 [Invited Talk] Precise Ion Implantation for Advanced MOS LSIs
Toshiharu Suzuki (SEN) ED2008-44 SDM2008-63
Issues in the ion implantation technology employed in advanced MOSLSIs are addressed, where the placement of implanted i... [more] ED2008-44 SDM2008-63
pp.25-30
SDM, OME 2008-04-11
10:35
Okinawa Okinawa Seinen Kaikan Electrical activation of heavily doped Si film by crystallization annealing
Takashi Noguchi, Tomoyuki Miyahira, Kenji Kawai (Univ. Ryukyus), Toshiharu Suzuki, Masateru Sato (SEN) SDM2008-4 OME2008-4
After UV pulsed excimer laser annealing for highly
boron-, or phosphorus dosed Si film, the relationship
between the c... [more]
SDM2008-4 OME2008-4
pp.17-22
 Results 1 - 15 of 15  /   
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