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All Technical Committee Conferences  (Searched in: Recent 10 Years)

Search Results: Conference Papers
 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 9 of 9  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
MW, ED 2025-01-24
14:20
Tokyo fukaya-kouminkan (Tokyo, Online)
(Primary: On-site, Secondary: Online)
[Invited Talk] Development of GaN-based HEMTs for 100 GHz Band 1 Watt Class Power Amplifiers
Shiro Ozaki, Yusuke Kumazaki, Yasuhiro Nakasha, Atsushi Yamada, Naoki Hara, Toshihiro Ohki (Fujitsu) ED2024-81 MW2024-167
This study describes high-power and high-efficiency 100 GHz band GaN-based high-electron-mobility transistors (HEMTs) fo... [more] ED2024-81 MW2024-167
pp.73-76
AP
(2nd)
2025-01-09
15:20
Kyoto Ryukoku University (Kyoto) Heterogeneous Integration for 300-GHz band Array Antenna with Power Amplifiers
Shiro Ozaki (Fujitsu), Takuichi Hirano (TCU), Yasuhiro Nakasha, Toshihiro Ohki, Naoki Hara (Fujitsu)
 [more]
ED, MWPTHz 2024-12-20
11:20
Miyagi RIEC, Tohoku Univ. (Miyagi, Online)
(Primary: On-site, Secondary: Online)
Experiment of Fixed Wireless Data Transmission at 100GHz Band toward 6G
Masafumi Tsutsui, Liang Zhou, Yasuhiro Nakasha, Takashi Dateki, Yusuke Kumazaki, Shiro Ozaki, Toshihiro Ohki (FUJITSU) ED2024-62 MWPTHz2024-74
 [more] ED2024-62 MWPTHz2024-74
pp.30-33
ED, CPM, LQE 2024-11-29
16:20
Aichi Nagoya Institute of Technology (Aichi) Improved performance of InP-based MOS-HEMTs by H2O vapor oxidant source for ALD-Al2O3 gate insulator films
Shiro Ozaki, Yusuke Kumazaki, Naoya Okamoto, Yasuhiro Nakasha, Toshihiro Ohki, Hara Naoki (Fujitsu) ED2024-38 CPM2024-82 LQE2024-69
In this study, we successfully demonstrated the improved performance of InP-based metal-oxide-semiconductor high-electro... [more] ED2024-38 CPM2024-82 LQE2024-69
pp.73-78
AP, SANE, SAT
(Joint)
2024-07-24
10:00
Hokkaido Frontier Research in Applied Sciences Building, Hokkaido University (Hokkaido, Online)
(Primary: On-site, Secondary: Online)
A Waveguide Antenna Array Module for Sub-THz Communications
Shiro Ozaki (Fujitsu), Takuichi Hirano (Tokyo City Univ.), Naoya Okamoto, Yasuhiro Nakasha, Toshihiro Ohki, Naoki Hara (Fujitsu) AP2024-21
For sub-THz communication applications, we developed an antenna array module with element pitch less than 1 wavelength (... [more] AP2024-21
pp.1-4
MW, ED 2021-01-29
14:25
Online Online (Online) Improved power-added-efficiency in GaN-HEMT on freestanding GaN substrate with reduced interface contamination
Yusuke Kumazaki, Toshihiro Ohki, Junji Kotani, Shiro Ozaki (Fujitsu/Fujitsu Labs.), Yoshitaka Niida (Fujitsu Labs.), Yuichi Minoura (Fujitsu/Fujitsu Labs.), Masato Nishimori (Fujitsu), Naoya Okamoto (Fujitsu/Fujitsu Labs.), Masaru Sato, Norikazu Nakamura (Fujitsu Labs.), Keiji Watanabe (Fujitsu/Fujitsu Labs.) ED2020-34 MW2020-87
 [more] ED2020-34 MW2020-87
pp.34-37
MW, ED 2017-01-26
14:50
Tokyo Kikai-Shinko-Kaikan Bldg. (Tokyo) [Invited Lecture] Current Status of Millimeter-Wave GaN-HEMTs
Kozo Makiyama, Yoshitaka Niida, Shiro, Toshihiro Ohki, Naoya Okamoto, Yuichi Minoura, Masaru Sato, Youichi Kamata, Kazukiyo Jpshin, Keiji Watanabe (Fujitsu), Yasuyuki Miyamoto (Tokyo Tech.) ED2016-98 MW2016-174
 [more] ED2016-98 MW2016-174
pp.13-16
ED 2016-07-23
14:00
Tokyo Tokyo Metropolitan Univ. Minami-Osawa Campus, International House (Tokyo) Surface-oxide-controlled InAlN/GaN MOS-HEMT Using Water Vapor
Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Kazukiyo Joshin (Fujitsu Lab.) ED2016-27
 [more] ED2016-27
pp.1-4
ED 2015-07-24
14:05
Ishikawa IT Business Plaza Musashi 5F (Ishikawa) Low Damage Dry Etching for Recessed Gate AlGaN/GaN-HEMTs
Yuichi Minoura, Naoya Okamoto, Toshihiro Ohki, Shiro Ozaki, Kozo Makiyama, Yoichi Kamada, Keiji Watanabe (Fujitsu Labs.) ED2015-38
 [more] ED2015-38
pp.9-13
 Results 1 - 9 of 9  /   
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