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All Technical Committee Conferences (Searched in: Recent 10 Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
MW, ED |
2025-01-24 14:20 |
Tokyo |
fukaya-kouminkan (Tokyo, Online) (Primary: On-site, Secondary: Online) |
[Invited Talk]
Development of GaN-based HEMTs for 100 GHz Band 1 Watt Class Power Amplifiers Shiro Ozaki, Yusuke Kumazaki, Yasuhiro Nakasha, Atsushi Yamada, Naoki Hara, Toshihiro Ohki (Fujitsu) ED2024-81 MW2024-167 |
This study describes high-power and high-efficiency 100 GHz band GaN-based high-electron-mobility transistors (HEMTs) fo... [more] |
ED2024-81 MW2024-167 pp.73-76 |
AP (2nd) |
2025-01-09 15:20 |
Kyoto |
Ryukoku University (Kyoto) |
Heterogeneous Integration for 300-GHz band Array Antenna with Power Amplifiers Shiro Ozaki (Fujitsu), Takuichi Hirano (TCU), Yasuhiro Nakasha, Toshihiro Ohki, Naoki Hara (Fujitsu) |
[more] |
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ED, MWPTHz |
2024-12-20 11:20 |
Miyagi |
RIEC, Tohoku Univ. (Miyagi, Online) (Primary: On-site, Secondary: Online) |
Experiment of Fixed Wireless Data Transmission at 100GHz Band toward 6G Masafumi Tsutsui, Liang Zhou, Yasuhiro Nakasha, Takashi Dateki, Yusuke Kumazaki, Shiro Ozaki, Toshihiro Ohki (FUJITSU) ED2024-62 MWPTHz2024-74 |
[more] |
ED2024-62 MWPTHz2024-74 pp.30-33 |
ED, CPM, LQE |
2024-11-29 16:20 |
Aichi |
Nagoya Institute of Technology (Aichi) |
Improved performance of InP-based MOS-HEMTs by H2O vapor oxidant source for ALD-Al2O3 gate insulator films Shiro Ozaki, Yusuke Kumazaki, Naoya Okamoto, Yasuhiro Nakasha, Toshihiro Ohki, Hara Naoki (Fujitsu) ED2024-38 CPM2024-82 LQE2024-69 |
In this study, we successfully demonstrated the improved performance of InP-based metal-oxide-semiconductor high-electro... [more] |
ED2024-38 CPM2024-82 LQE2024-69 pp.73-78 |
AP, SANE, SAT (Joint) |
2024-07-24 10:00 |
Hokkaido |
Frontier Research in Applied Sciences Building, Hokkaido University (Hokkaido, Online) (Primary: On-site, Secondary: Online) |
A Waveguide Antenna Array Module for Sub-THz Communications Shiro Ozaki (Fujitsu), Takuichi Hirano (Tokyo City Univ.), Naoya Okamoto, Yasuhiro Nakasha, Toshihiro Ohki, Naoki Hara (Fujitsu) AP2024-21 |
For sub-THz communication applications, we developed an antenna array module with element pitch less than 1 wavelength (... [more] |
AP2024-21 pp.1-4 |
MW, ED |
2021-01-29 14:25 |
Online |
Online (Online) |
Improved power-added-efficiency in GaN-HEMT on freestanding GaN substrate with reduced interface contamination Yusuke Kumazaki, Toshihiro Ohki, Junji Kotani, Shiro Ozaki (Fujitsu/Fujitsu Labs.), Yoshitaka Niida (Fujitsu Labs.), Yuichi Minoura (Fujitsu/Fujitsu Labs.), Masato Nishimori (Fujitsu), Naoya Okamoto (Fujitsu/Fujitsu Labs.), Masaru Sato, Norikazu Nakamura (Fujitsu Labs.), Keiji Watanabe (Fujitsu/Fujitsu Labs.) ED2020-34 MW2020-87 |
[more] |
ED2020-34 MW2020-87 pp.34-37 |
MW, ED |
2017-01-26 14:50 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. (Tokyo) |
[Invited Lecture]
Current Status of Millimeter-Wave GaN-HEMTs Kozo Makiyama, Yoshitaka Niida, Shiro, Toshihiro Ohki, Naoya Okamoto, Yuichi Minoura, Masaru Sato, Youichi Kamata, Kazukiyo Jpshin, Keiji Watanabe (Fujitsu), Yasuyuki Miyamoto (Tokyo Tech.) ED2016-98 MW2016-174 |
[more] |
ED2016-98 MW2016-174 pp.13-16 |
ED |
2016-07-23 14:00 |
Tokyo |
Tokyo Metropolitan Univ. Minami-Osawa Campus, International House (Tokyo) |
Surface-oxide-controlled InAlN/GaN MOS-HEMT Using Water Vapor Shiro Ozaki, Kozo Makiyama, Toshihiro Ohki, Yoichi Kamada, Masaru Sato, Yoshitaka Niida, Naoya Okamoto, Kazukiyo Joshin (Fujitsu Lab.) ED2016-27 |
[more] |
ED2016-27 pp.1-4 |
ED |
2015-07-24 14:05 |
Ishikawa |
IT Business Plaza Musashi 5F (Ishikawa) |
Low Damage Dry Etching for Recessed Gate AlGaN/GaN-HEMTs Yuichi Minoura, Naoya Okamoto, Toshihiro Ohki, Shiro Ozaki, Kozo Makiyama, Yoichi Kamada, Keiji Watanabe (Fujitsu Labs.) ED2015-38 |
[more] |
ED2015-38 pp.9-13 |
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