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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD 2005-04-14
09:00
Fukuoka   A Read-Static-Noise-Margin-Free SRAM cell for low-Vdd and High-speed applications
Koichi Takeda, Yasuhiko Hagihara (NEC), Yoshiharu Aimoto (NECEL), Masahiro Nomura, Yoetsu Nakazawa (NEC), Toshio Ishii, Hiroyuki Kobatake (NECEL)
A read-static-noise-margin-free SRAM cell consists of seven transistors, several of which are low-Vt NMOS transistors us... [more] ICD2005-1
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