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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ED 2009-06-24
14:30
Overseas Haeundae Grand Hotel, Busan, Korea [Invited Talk] Advanced magnetic tunnel junctions for hybrid spintronics/CMOS circuits
Shoji Ikeda (Tohoku Univ.), Jun Hayakawa (Hitachi, Ltd.), Huadong Gan, Kotaro Mizumuma, Ji Ho Park (Tohoku Univ.), Hiroyuki Yamamoto, Katsuya Miura (Hitachi, Ltd./Tohoku Univ.), Haruhiro Hasegawa, Ryutaro Sasaki, Toshiyasu Meguro (Tohoku Univ.), Kenchi Ito (Hitachi, Ltd.), Fumihiro Matsukura, Hideo Ohno (Tohoku Univ.) ED2009-51 SDM2009-46
Magnetoresistive random access memory (MRAM) using magnetic tunnel junctions (MTJs) is one of the candidates of universa... [more] ED2009-51 SDM2009-46
pp.5-8
ICD 2007-04-12
13:00
Oita   [Invited Talk] 2-Mb SPRAM (SPin-transfer torque RAM) with Bit-by-bit Bi-Directional Current Write and Parallelizing-Direction Current Read
Riichiro Takemura, Takayuki Kawahara, Katsuya Miura (Hitachi), Jun Hayakawa (Hitachi/Tohoku Univ.), Shoji Ikeda, Young Min LEE, Ryutaro Sasaki (Tohoku Univ.), Yasushi Goto, Kenchi Ito (Hitachi), Toshiyasu Meguro, Fumihiro Matsukura (Tohoku Univ.), Hiromasa Takahashi (Hitachi/Tohoku Univ.), Hideyuki Matsuoka (Hitachi), Hideo Ohno (Tohoku Univ.) ICD2007-6
A 1.8-V 2-Mb SPRAM (SPin-transfer torque RAM) chip using 0.2 µm logic process with MgO tunneling barrier cell demo... [more] ICD2007-6
pp.29-34
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