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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| MW, ED | 2025-01-23 17:05 |
Tokyo | fukaya-kouminkan (Primary: On-site, Secondary: Online) |
[Special Talk]
Quasi-Physical Large-Signal Model of GaN-HEMT on Si with RF Leakage Current in the Substrate Yutaro Yamaguchi (Mitsubishi Electric), Toshiyuki Oishi (Saga Univ.) |
[more] | |
| MW, ED | 2025-01-24 10:25 |
Tokyo | fukaya-kouminkan (Primary: On-site, Secondary: Online) |
Study on Effects of GaN and Surface (AlGaN) traps in GaN HEMTs to Drain Voltage Dependence of Low-frequency Y-parameters using Device Simulation Toshiyuki Oishi, Atsuhiro Kanemitsu (Saga Univ.), Ken Kudara, Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric) |
(To be available after the conference date) [more] | |
| ED, MW | 2024-01-25 14:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Study on Traps in GaN HEMTs using Low-frequency Y11 and Y22 Toshiyuki Oishi, Shiori Takada (Saga Univ.), Ken Kudara, Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric Corp.)  ED2023-67 MW2023-159 |
[more] | ED2023-67 MW2023-159 pp.7-10 |
| MW, ED | 2023-01-27 12:50 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Primary: On-site, Secondary: Online) |
Effects of GaN traps in GaN HEMTs to Low Frequency Y22 Parameters
-- Device Simulation Study -- Shogo Morokuma (Saga Univ.), Tomohiro Otsuka (Mitsubishi Electric), Toshiyuki Oishi (Saga Univ.), Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric) ED2022-91 MW2022-150 |
GaN HEMTs are used in high frequency and power electronics applications. Advanced systems demand improvement of characte... [more] | ED2022-91 MW2022-150 pp.29-32 |
| CPM, ED, LQE | 2022-11-24 14:35 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
Evaluation of Fe Induced Trap in GaN HEMTs using Low-Frequency Y22 Measurement Taiki Nishida, Toshiyuki Oishi (Saga Univ.), Tomohiro Otsuka, Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Elec. Corp.) ED2022-34 CPM2022-59 LQE2022-67 |
One issue in improving amplifier performance using GaN is evaluating the characteristics of traps. In this study, we eva... [more] | ED2022-34 CPM2022-59 LQE2022-67 pp.49-52 |
| MW, ED | 2021-01-29 13:25 |
Online | Online | Analysis of sidegate effect by 2D device simulation in AlGaN/GaN HEMT with different traps Kaito Ito, Toshiyuki Oishi (Saga Univ.) ED2020-32 MW2020-85 |
[more] | ED2020-32 MW2020-85 pp.26-29 |
| ED, MW | 2020-01-31 15:35 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Analysis of Self-heating Effect of GaN HEMTs with Buffer Traps by Low Frequency S-parameters Measurements and TCAD Simulation Tomohiro Otsuka, Yutaro Yamaguchi, Shintaro Shinjo (Mitsubishi Electric), Toshiyuki Oishi (Saga Univ.) ED2019-103 MW2019-137 |
[more] | ED2019-103 MW2019-137 p.53 |
| CPM, LQE, ED | 2019-11-21 12:40 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Load resistance and area dependence in β-Ga2O3 diode RF-DC converter circuit Makoto Hashikawa, Kosuke Urata, Takumi Takenohata, Toshiyuki Oishi, Takayoshi Oshima (Saga Univ.) ED2019-38 CPM2019-57 LQE2019-81 |
[more] | ED2019-38 CPM2019-57 LQE2019-81 pp.25-28 |
| AP, RCS (Joint) |
2019-11-20 16:50 |
Saga | Saga Univ. | [Special Talk]
(Oral Presentation)Present Status of Research and Development of Super Wide Bandgap Devices for Rectenna Toshiyuki Oishi (Saga Univ.) |
[more] | |
| EST, MW, OPE, MWP, EMT, IEE-EMT, THz [detail] | 2018-07-19 15:25 |
Hokkaido | A Ka-band GaN Large-Signal Model Considering Trap Effect on Non-linear Capacitance by Using Transient S-parameters Measurement Yutaro Yamaguchi, Tomohiro Otsuka, Masatake Hangai, Shintaro Shinjo (Mitsubishi Electric Corp.), Toshiyuki Oishi (Saga Univ.) EMT2018-30 MW2018-45 OPE2018-33 EST2018-28 MWP2018-29 |
[more] | EMT2018-30 MW2018-45 OPE2018-33 EST2018-28 MWP2018-29 pp.125-130 |
|
| LQE, CPM, ED | 2017-12-01 13:20 |
Aichi | Nagoya Inst. tech. | Study on degradation of NO2 adsorbed H-terminated diamond MOS FETs by constant voltage stress Yuma Ishimatsu, Kosuke Funaki, Satoshi Masuya, Kyosuke Miyazaki, Takayoshi Oshima, Makoto Kasu, Toshiyuki Oishi (Saga Univ.) ED2017-63 CPM2017-106 LQE2017-76 |
Diamond is expected to be applied to high frequency and high power devices, so far high frequency and high power operati... [more] | ED2017-63 CPM2017-106 LQE2017-76 pp.69-72 |
| MW, ED | 2017-01-27 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Physical model of GaN HEMT on Si including temperature dependence of RF leakage current in substrates Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric corp.), Toshiyuki Oishi (Saga univ.) ED2016-107 MW2016-183 |
[more] | ED2016-107 MW2016-183 pp.57-62 |
| MW, ED | 2017-01-27 13:25 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Study on dependence of passivation stress for electrical characteristics of AlGaN/GaN HEMTs by TCAD simulation Toshiyuki Oishi (Saga univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric corp.) ED2016-108 MW2016-184 |
Effects of passivation residual stress on electrical characteristics for GaN HEMTs have been studied by using a TCAD sim... [more] | ED2016-108 MW2016-184 pp.63-68 |
| MW | 2016-11-17 14:30 |
Saga | Saga Univ. | Semi-Physical Large Signal Model of GaN HEMTs on Si considering temperature dependence of RF leakage current in Substrates Yutaro Yamaguchi, Shintaro Shinjo, Koji Yamanaka (Mitsubishi Electric Corp.), Toshiyuki Oishi (Saga Univ.) MW2016-122 |
In this paper, semi-physical large signal model of GaN HEMTs on Si (GaN-on-Si) considering temperature dependence of RF ... [more] | MW2016-122 pp.33-38 |
| MW | 2016-11-18 11:20 |
Saga | Saga Univ. | Effect of buffer trap on low-frequency equivalent circuit parameters of GaN HEMTs Syuzo Yamaguchi, Toshiyuki Oishi (Saga Univ.) MW2016-128 |
To examine the effect of the traps in the GaN HEMT, equivalent circuit parameters in the low-frequency was measured. Res... [more] | MW2016-128 pp.69-72 |
| CPM, ED, SDM | 2016-05-19 15:25 |
Shizuoka | Shizuoka University, Hamamatsu campus (Joint Research Lab.) | Rectenna circuits with diamond Schottky barrier diodes Naoto Kawano, Makoto Kasu, Toshiyuki Oishi (Saga Univ.) ED2016-18 CPM2016-6 SDM2016-23 |
[more] | ED2016-18 CPM2016-6 SDM2016-23 pp.25-28 |
| ED | 2016-01-20 13:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | [Invited Lecture]
Estimation of RF-DC conversion efficiency of microwave power Shottky barrier diodes for rectenna by small equivalent circuit model
-- Comparison of semiconductor materials -- Toshiyuki Oishi, Makoto Kasu (Saga Univ.) ED2015-116 |
RF-DC conversion efficiencies of rectenna using conventional and wide bandgap semiconductors are estimated by small sign... [more] | ED2015-116 pp.25-29 |
| ED, CPM, SDM | 2015-05-28 16:05 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Schottky barrier diodes of high mobility β-Ga2O3 (-201) single crystals grown by edge-defined-fed growth method Yuta Koga, Kazuya Harada, Kenji Hanada, Toshiyuki Oishi, Makoto Kasu (Saga Univ.) ED2015-22 CPM2015-7 SDM2015-24 |
High Hall electron mobility and its high performances of Schottky barrier diodes on edge-defined film-fed grown (2 ̅... [more] | ED2015-22 CPM2015-7 SDM2015-24 pp.31-34 |
| ED, CPM, SDM | 2015-05-28 16:40 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Analysis of forward characteristics of GaN Schottky barrier diodes by using floating electrodes Syuzo Yamaguchi, Toshiyuki Oishi (Saga Univ.), Yutaro Yamaguchi, Koji Yamanaka (Mitsubishi Electric Corp.) ED2015-23 CPM2015-8 SDM2015-25 |
In high power Schottky barrier diodes, it is possible to apply a high voltage to Schottky electrodes. In this paper, we ... [more] | ED2015-23 CPM2015-8 SDM2015-25 pp.35-39 |
| ED, CPM, SDM | 2015-05-28 17:05 |
Aichi | Venture Business Laboratory, Toyohashi University of Technology | Device simulation of NO2-exposed H-terminated diamond FETs with Al2O3 insulator Toshiyuki Oishi, Ryutaro Higashi, Kazuya Harada, Yuta Koga (Saga Univ.), Kazuyuki Hirama (NTT), Makoto Kasu (Saga Univ.) ED2015-24 CPM2015-9 SDM2015-26 |
This paper investigated the simulation model for NO2-exposed H-terminated diamond FETs with Al2O3 insulator gate, which ... [more] | ED2015-24 CPM2015-9 SDM2015-26 pp.41-44 |
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