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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, LQE, CPM | 2015-11-27 10:00 |
Osaka | Osaka City University Media Center | Behavior of Plasma-induced Defects in GaN
-- Comparison between n- and p type GaN -- Yusuke Koga, Seiji Nakamura, Tsugunori Okumura (TMU) |
[more] | |
| ED | 2010-09-13 13:50 |
Fukuoka | Kyushu Institute of Technology(Wakamatsu) | Hydrogen response mechanisms of Pd/AlGaN/GaN HEMT-based sensors Takuma Takimoto, Seiji Nakamura, Tsugunori Okumura (Tokyo Metropolitan Univ.) |
[more] | |
| ED | 2009-06-11 15:35 |
Tokyo | Electrical characterization of plasma-induced defects in GaN Seiji Nakamura, Koichi Hoshino, Shunsuke Ochiai, Michihiko Suhara, Tsugunori Okumura (Tokyo Metro Univ.)  ED2009-40 |
[more] | ED2009-40 pp.21-25 |
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| LQE, ED, CPM | 2008-11-28 15:45 |
Aichi | Nagoya Institute of Technology | Simulation of Bending Deformation and Two-dimensional Electron Gas Density in AlGaN/GaN Hetero Structure Hajime Tsukahara, Seiji Nakamura, Tsugunori Okumura (Tokyo Metropolitan univ.) ED2008-182 CPM2008-131 LQE2008-126 |
We have examined the effect on a two-dimensional electron gas(2DEG) in AlGaN/GaN hetero structures by using the “micro-o... [more] | ED2008-182 CPM2008-131 LQE2008-126 pp.149-154 |
| LQE, ED, CPM | 2008-11-28 16:10 |
Aichi | Nagoya Institute of Technology | Detection mechanisms of Pd/AlGaN/GaN HEMT-based hydrogen gas sensors Noriyuki Takahashi, Seiji Nakamura, Tsugunori Okumura (Tokyo Metropolitan Univ) ED2008-183 CPM2008-132 LQE2008-127 |
The hydrogen sensing properties of AlGaN/GaN high electron mobility transistors with Pd gate electrodes are demonstrated... [more] | ED2008-183 CPM2008-132 LQE2008-127 pp.155-159 |
| ED | 2008-06-14 09:25 |
Ishikawa | Kanazawa University | Parameter Estimation of Nonliner Equivalent Circuit in Compound Ssemiconductor Triple-Barrier Resonant Tunneling Diodes Yuichi Iki, Masaaki Shinada, Mamoru Naoi, Naoya Asaoka, Michihiko Suhara, Tsugunori Okumura (TMU) ED2008-33 |
For compound semiconductor triple-barrier resonant tunneling diodes (TBRTDs), nonlinear equivalent circuits and voltage ... [more] | ED2008-33 pp.61-66 |
| ED | 2007-06-15 16:40 |
Toyama | Toyama Univ. | Study for implementation of integrated gyrators by using resonant tunneling diodes Michihiko Suhara, Eri Ueki, Tsugunori Okumura (Tokyo Metro. Univ.) ED2007-39 |
An integrated gyrator circuit is proposed on the basis of using resonant tunneling diodes (RTDs) and a FET. It is well k... [more] | ED2007-39 pp.45-50 |
| SDM, ED | 2007-02-01 13:30 |
Hokkaido | Physics-based SPICE modeling of triple barrier resonant tunneling diodes Naoya Asaoka, Michihiko Suhara, Tsugunori Okumura (Tokyo Metropolitan Univ.) |
[more] | ED2006-240 SDM2006-228 pp.1-6 |
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| R, ED, SDM | 2005-11-25 15:30 |
Osaka | Central Electric Club | Electrical characterization of n-GaN exposed to hydrogen plasma Masayuki Suda, Seiji Nakamura, Michihiko Suhara, Tsugunori Okumura (Tokyo Metropolitan Univ.) |
We have studied the electrical characteristics of n-GaN exposed to plasma. In the case of hydrogen plasma, the decrease ... [more] | R2005-45 ED2005-180 SDM2005-199 pp.43-46 |
| MW | 2005-09-12 11:35 |
Tokyo | A theoretical analysis of effect of size reduction & linewidth modulation on planar spiral inductor Masanori Okayama, Michihiko Suhara, Tsugunori Okumura (Tokyo Metropolitan Univ.) |
[more] | MW2005-67 pp.27-32 |
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