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 Results 1 - 14 of 14  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM, LQE, ED 2016-12-13
Kyoto Kyoto University Characterization of electric properties for wide-gap semiconductors using terahertz time-domain elipsometry
Takashi Fujii (RITS/PNP), Kohei Tachi, Tsutomu Araki, Yasushi Nanishi (RITS), Toshiyuki Iwamoto, Yukinori Sato (PNP), Takshi Nagashima (Setsunan Univ.) ED2016-78 CPM2016-111 LQE2016-94
Scattering time () of several inorganic semiconductors are around 10-1 psec. Therefore, electric properties, suc... [more] ED2016-78 CPM2016-111 LQE2016-94
ED, LQE, CPM 2015-11-26
Osaka Osaka City University Media Center Study on AlGaN formation on alpha-(AlGa)2O3 by surface nitridation using radio frequency nitrogen plasma
Tsutomu Araki, Akira Buma, Nao Masuda, Yasushi Nanishi (Ritsumeikan Univ.), Masaya Oda, Toshimi Hitora (FLOSFIA) ED2015-68 CPM2015-103 LQE2015-100
 [more] ED2015-68 CPM2015-103 LQE2015-100
ED, LQE, CPM 2012-11-30
Osaka Osaka City University RF-MBE Growth of InGaN-based quantum nanostructures using DERI
Tsutomu Araki, Nao Uematsu, Junichi Sakaguchi, Ke Wang (Ritsumeikan Univ.), Tomohiro Yamaguchi (Kogakuin Univ.), Euijoon Yoon (Seoul National Univ.), Yasushi Nanishi (Ritsumeikan Univ.) ED2012-78 CPM2012-135 LQE2012-106
 [more] ED2012-78 CPM2012-135 LQE2012-106
CPM, LQE, ED 2010-11-11
Osaka   Study on improved crystal quality of non-polar A-plane InN grown on r-plane sapphire by RF-MBE
Tsutomu Araki, Keisuke Kawashima, Tomohiro Yamaguchi, Yasushi Nanishi (Ritsumeikan Univ.) ED2010-143 CPM2010-109 LQE2010-99
 [more] ED2010-143 CPM2010-109 LQE2010-99
ED, LQE, CPM 2009-11-19
Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) High quality InN crystal growh by RF-MBE -- Growth of position-controlled InN nanocolumns --
Tsutomu Araki, Tomohiro Yamaguchi, Masamitsu Kaneko (Ritsumeikan Univ.), Yasushi Nanishi (Ritsumeikan Univ./Seoul National Univ.) ED2009-132 CPM2009-106 LQE2009-111
Position controlled InN nanocolumns were successfully grown by ECR-MBE and RF-MBE on hole-patterned GaN template fabrica... [more] ED2009-132 CPM2009-106 LQE2009-111
LQE, ED, CPM 2008-11-27
Aichi Nagoya Institute of Technology Growth and Characterization of M-plane InN on LiAlO2 Substrate by RF-MBE
Yusuke Takagi, Hirokazu Nozawa, Tomohiro Yamaguchi, Tsutomu Araki, Yasushi Nanishi (Ritsumeikan Univ.) ED2008-157 CPM2008-106 LQE2008-101
In this study, we report the growth and characterization of M-plane InN films on LiAlO2 (100) substrates by radio-freque... [more] ED2008-157 CPM2008-106 LQE2008-101
ED, CPM, LQE 2006-10-05
Kyoto   Temperature Distribution Analysis of AlGaN/GaN HFETs Operated at High Voltage Using Micro-Raman Spectroscopy
Kenichi Kosaka, Tatsuya Hujishima (Ritsumeikan Univ.), Kaoru Inoue (FED), Akihiro Hinoki (Ritsumeikan Univ.), Tomoaki Yamada, Tadayoshi Tsuchiya, Junjiroh Kikawa, Shinichi Kamiya (FED), Akira Suzuki (Ritsumeikan Univ./FED), Tsutomu Araki, Yasushi Nanishi (Ritsumeikan Univ.)
 [more] ED2006-159 CPM2006-96 LQE2006-63
ED, CPM, LQE 2006-10-06
Kyoto   Position and Size Controlled InN Nano-dot Growth on Patterned Substrates by ECR-MBE
Taihei Yamaguchi (Ritsumeikan Univ.), Hiroyuki Naoi (Ritsumeikan univ. COE), Tsutomu Araki, Yasushi Nanishi (Ritsumeikan Univ.)
 [more] ED2006-174 CPM2006-111 LQE2006-78
LQE, ED, CPM 2005-10-13
Shiga Ritsumeikan Univ. High-quality InN grown on micro-facetted InN template
Daisuke Muto, Hiroyuki Naoi, Tsutomu Araki, Sachio Kitagawa, Masahito Kurouchi, Hyunseok Na, Yasushi Nanishi (Ritsumeikan Univ.)
 [more] ED2005-118 CPM2005-105 LQE2005-45
LQE, ED, CPM 2005-10-13
Shiga Ritsumeikan Univ. (11-20) InN Growth on Nitridated (10-12) Sapphire by ECR-MBE -- Investigation of Non-polar InN --
Yuya Kumagai, Akihiro Tsuyuguchi, Kuniko Teraki, Tsutomu Araki, Hiroyuki Naoi, Yasushi Nanishi (Ritsumeikan Univ.)
A-plane (11-20) InN has been successfully grown on R-plane (10-12) sapphire substrate by electron cyclotron resonance pl... [more] ED2005-120 CPM2005-107 LQE2005-47
LQE, ED, CPM 2005-10-13
Shiga Ritsumeikan Univ. Polarity determination of InN by atomic hydrogen irradiation
Yuya Hayakawa, Daisuke Muto (Ritsumeikan Univ.), Hiroyuki Naoi (COE program), Akira Suzuki (Research Organization of Science and Engineering), Tsutomu Araki, Yasushi Nanishi (Ritsumeikan Univ.)
 [more] ED2005-121 CPM2005-108 LQE2005-48
LQE, ED, CPM 2005-10-13
Shiga Ritsumeikan Univ. Characterization of InN/InGaN quantum well structures grown by RF-MBE
Masahito Kurouchi, Sinya Takado, Hiroyuki Naoi, Tsutomu Araki, Yasushi Nanishi (Ritsumeikan Univ.)
 [more] ED2005-123 CPM2005-110 LQE2005-50
LQE, ED, CPM 2005-10-13
Shiga Ritsumeikan Univ. Study on correlation between the leakage current of GaN-layer and the luminescence intensity
Akihiro Hinoki (Ritsumeikan Univ.), , Tadayoshi Tsuchiya, Tomoyuki Yamada, Masayuki Iwami (FED), Junjiroh Kikawa, Tsutomu Araki, Akira Suzuki, Yasushi Nanishi (Ritsumeikan Univ.)
 [more] ED2005-133 CPM2005-120 LQE2005-60
LQE, ED, CPM 2005-10-13
Shiga Ritsumeikan Univ. Gate Leakage Current in AlGaN/GaN High Electron Mobility Transistors
Tomoyuki Yamada, Tadayoshi Tsuchiya, Junjiroh Kikawa, Masayuki Iwami (R&D Association for Future Electron Devices), Tsutomu Araki, Akira Suzuki, Yasushi Nanishi (Ritsumeikan Univ.)
 [more] ED2005-134 CPM2005-121 LQE2005-61
 Results 1 - 14 of 14  /   
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