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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, LQE, CPM 2015-11-26
13:35
Osaka Osaka City University Media Center Electrical characterization of lightly Si-doped homoepitaxitial n-type GaN studied by Hall-effect measurement
Naoki Sawada (Kyoto Univ.), Tetsuo Narita, Tetsu Kachi, Tsutomu Uesugi (TOYOTA Central R&D Labs.), Masahiro Horita, Jun Suda (Kyoto Univ.) ED2015-73 CPM2015-108 LQE2015-105
 [more] ED2015-73 CPM2015-108 LQE2015-105
pp.27-32
ED, SDM, CPM 2012-05-18
09:50
Aichi VBL, Toyohashi Univ. of Technol. Evaluation of GaN substrates for vertical GaN power device applications
Tetsu Kachi, Tsutomu Uesugi (Toyota RDL) ED2012-28 CPM2012-12 SDM2012-30
 [more] ED2012-28 CPM2012-12 SDM2012-30
pp.53-56
CPM, LQE, ED 2010-11-12
10:25
Osaka   Study of etching-induced damage in p-type GaN by hard X-ray photoelectron spectroscopy
Daigo Kikuta, Tetsuo Narita, Naoko Takahashi, Keita Kataoka, Yasuji Kimoto, Tsutomu Uesugi, Tetsu Kachi (Toyota CRDL, Inc.), Masahiro Sugimoto (Toyota Motor Corp.) ED2010-155 CPM2010-121 LQE2010-111
We carried out nondestructive measurements of the depth profile of etching-induced damage in p-GaN, in particular surfac... [more] ED2010-155 CPM2010-121 LQE2010-111
pp.59-62
ED, SDM 2010-07-02
11:05
Tokyo Tokyo Inst. of Tech. Ookayama Campus Characteristics of GaN p-n diode with damage layer induced by ICP plasma process
Tsutomu Uesugi, Tetsu Kachi (Toyota Central R&D Labs.), Tamotsu Hashizume (Hokkaido Univ.) ED2010-108 SDM2010-109
 [more] ED2010-108 SDM2010-109
pp.253-256
 Results 1 - 4 of 4  /   
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