|
|
All Technical Committee Conferences (Searched in: All Years)
|
|
Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
|
Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] |
2018-01-25 13:40 |
Shizuoka |
Shizuoka Univ., Hamamatsu |
Luminescence characteristics of GaN films grown by chemical vapor deposition using Ga vapor Yuichiro Masuda, Tsuyoshi Nagase, Wataru Kunieda, Tetsuya Kouno, Hiroko Kominami, Kazuhiko Hara (Shizuoka Univ.) EID2017-31 |
We have grown gallium nitride (GaN) thin films on c-plane sapphire substrate by chemical vapor deposition (CVD) using Ga... [more] |
EID2017-31 pp.5-8 |
EID, ITE-IDY, IEE-EDD, IEIJ-SSL, SID-JC [detail] |
2017-01-27 11:34 |
Tokushima |
Tokushima Univ. |
Growth of GaN thin films by chemical vapor deposition using Ga vapor Kensuke Fukasawa, Tsuyoshi Nagase, Yuichirou Masuda, Tetsuya Kouno, Hiroko Kominami, Hara kazuhiko (Shizuoka Univ.) EID2016-45 |
Gallium nitride (GaN) thin films were grown on c-plane sapphire substrates by chemical vapor deposition using Ga vapor a... [more] |
EID2016-45 pp.125-128 |
|
|
|
Copyright and reproduction :
All rights are reserved and no part of this publication may be reproduced or transmitted in any form or by any means, electronic or mechanical, including photocopy, recording, or any information storage and retrieval system, without permission in writing from the publisher. Notwithstanding, instructors are permitted to photocopy isolated articles for noncommercial classroom use without fee. (License No.: 10GA0019/12GB0052/13GB0056/17GB0034/18GB0034)
|
[Return to Top Page]
[Return to IEICE Web Page]
|