Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED, THz |
2017-12-19 15:10 |
Miyagi |
RIEC, Tohoku Univ |
Temperature Dependence of the Transconductance of a Dual Gate Graphene Field Effect Transistor Kenta Sugawara, Takayuki Watanabe, Deepika Yadav, Takahiro Komiyama, Yoshiki Fuse (Tohoku Univ.), Maxim Ryzhii (Aizu Univ.), Victor Ryzhii, Hirokazu Fukidome, Maki Suemitsu, Taiichi Otsuji (Tohoku Univ.) ED2017-91 |
We report on experimental observation of temperature characteristics of a dual gate graphene field effect transisor (DG-... [more] |
ED2017-91 pp.73-76 |
ED |
2015-12-22 10:05 |
Miyagi |
RIEC, Tohoku Univ |
Terahertz Emission and Detection from Double Graphene Layer Heterostructures Deepika Yadav, Stephane Boubanga Tombet, Stevanus Arnold, Takayuki Watanabe (RIEC Tohoku Univ.), Victor Ryzhii (Inst. of Ultra High Freq. Semicond. Elect. Russia), Taiichi Otsuji (RIEC Tohoku Univ.) ED2015-103 |
We report on experimental observation of terahertz emission and detection in a double graphene layer hetero structure wh... [more] |
ED2015-103 pp.71-76 |
ED |
2013-12-17 13:30 |
Miyagi |
Research Institute of Electrical Communication Tohoku University |
[Invited Talk]
Novel concepts and technology for terahertz device applications using graphene Victor Ryzhii, Akira Satou (Tohoku Univ.), Maxim Ryzhii (Univ. of Aizu), Taiichi Otsuji (Tohoku Univ.) ED2013-106 |
Recent progress in study on terahertz device applications using graphene will be reviewed. The device concepts exploitin... [more] |
ED2013-106 pp.91-96 |
EST |
2013-05-10 13:00 |
Kanagawa |
NTT Science and Core Technology Laboratory Group |
Numerical study of terahertz two-dimensional plasmons in graphene Akira Satou, Victor Ryzhii (Tohoku Univ.), Vladimir Mitin, Fedir Vasko (Univ. at Buffalo), Taiichi Otsuji (Tohoku Univ.) EST2013-4 |
We develop a numerical model for simulation of plasmons in graphene with grating-gate structures, based on the Boltzmann... [more] |
EST2013-4 pp.15-20 |
ED |
2012-12-17 15:40 |
Miyagi |
Tohoku University |
Terahertz Population Inversion in Graphene by Optical Pulse Excitation Akira Satou, Victor Ryzhii, Yuki Kurita, Taiichi Otsuji (Tohoku Univ.) ED2012-98 |
We theoretically studied the nonequilibrium carrier relaxation dynamics and the terahertz population inversion in intrin... [more] |
ED2012-98 pp.29-33 |
ED, SDM |
2012-02-07 16:30 |
Hokkaido |
|
Gain enhancement in graphene terahertz amplifier with resonant structure Yuya Takatsuka, Kazuhiro Takahagi, Eiichi Sano (Hokkaido Univ.), Victor Ryzhii (Univ. of Aizu), Taiichi Otsuji (Tohoku Univ.) ED2011-148 SDM2011-165 |
THz devices have been developed over the last decade to utilise THz waves for non-destructive sensing and high-speed wir... [more] |
ED2011-148 SDM2011-165 pp.35-40 |
ED |
2011-12-15 13:40 |
Miyagi |
Tohoku University |
Stimulated Terahertz Emission from Optically Pumped Graphene Takayuki Watanabe, Stephane Boubanga Tombet, Tetsuya Fukushima, Akira Satou, Taiichi Otsuji (Tohoku Univ.), Victor Ryzhii (Univ. of Aizu) ED2011-114 |
We conduct time domain spectroscopy studies and show that graphene sheet amplifies an incoming terahertz field. The grap... [more] |
ED2011-114 pp.79-83 |
ED |
2010-12-16 16:00 |
Miyagi |
Tohoku University (Research Institute of Electrical Communication) |
THz Amplifiers with Gain Medium and Field-enhancement Effect Yuya Takatsuka, Eiichi Sano (Hokkaido Univ.), Victor Ryzhii (Univ. of Aizu), Taiichi Otsuji (Tohoku Univ.) ED2010-162 |
THz devices have been developed over the last decade to utilise THz waves for non-destructive sensing and high-speed wir... [more] |
ED2010-162 pp.25-29 |
ED |
2010-12-16 16:25 |
Miyagi |
Tohoku University (Research Institute of Electrical Communication) |
Nonequilibrium Carrier Relaxation Dynamics in Optically Pumped Graphene and Population Inversion in Terahertz Range Akira Satou (Tohoku Univ.), Victor Ryzhii (Univ. of Aizu), Stephane Boubanga-Tombet, Taiichi Otsuji (Tohoku Univ.) ED2010-163 |
We study theoretically the population inversion in terahertz (THz) frequency in intrinsic graphene under
optical pulse ... [more] |
ED2010-163 pp.31-34 |
ED |
2010-12-16 16:50 |
Miyagi |
Tohoku University (Research Institute of Electrical Communication) |
Coherent and Tunable Terahertz Emission from Nano-metric Field Effect Transistor at Room Temperature Stephane Boubanga Tombet, Akira Satou (Tohoku Univ.), Victor Ryzhii (Univ. of Aizu), Taiichi Otsuji (Tohoku Univ.) ED2010-164 |
We report on reflective electro-optic sampling measurements of TeraHertz emission from nanometer-gate-length InGaAs-base... [more] |
ED2010-164 pp.35-39 |
ED, SDM |
2010-02-23 11:35 |
Okinawa |
Okinawaken-Seinen-Kaikan |
Detectors of Terahertz and Infrared Radiation Based on p-i-n Single- and Multiple Graphene Layer Structures Victor Ryzhii, Maxim Ryzhii (Univ. of Aizu), Taiichi Otsuji (Tohoku Univ.), Vladimir Mitin (Buffalo Univ.) ED2009-209 SDM2009-206 |
Detectors of terahertz and infrared radiation based on p-i-n graphene structures utilizing interband transitions are pro... [more] |
ED2009-209 SDM2009-206 pp.77-80 |
ED |
2009-11-30 10:30 |
Osaka |
Osaka Science & Technology Center |
Observation of Coherent THz Emission in Optically Pumped Epitaxial Graphene Heterostructures Hiromi Karasawa, Takayuki Watanabe, Tsuneyoshi Komori (Tohoku Univ.), Maki Suemitsu (Tohoku Univ. /JST-CREST), Victor Ryzhii (Aizu Univ. /JST-CREST), Taiichi Otsuji (Tohoku Univ. /JST-CREST) ED2009-169 |
Graphene is a single-layer carbon-atomic honeycomb lattice crystal. Electrons and holes in graphene hold a linear disper... [more] |
ED2009-169 pp.53-58 |
SDM, ED |
2009-02-26 13:30 |
Hokkaido |
Hokkaido Univ. |
[Invited Talk]
Epitaxial Graphene Grown on Si Substrate and Its Applications to Electron Devices Taiichi Otsuji, Tetsuya Suemitsu, Hyon-Choru Kang, Hiromi Karasawa, Yuu Miyamoto, Hiroyuki Handa, Maki Suemitsu (Tohoku Univ.), Eiichi Sano (Hokkaido Univ.), Maxim Ryzhii, Victor Ryzhii (Univ. of Aizu) ED2008-224 SDM2008-216 |
This paper reviews recent advances in graphene material epitaxially grown on Si substrate and its applications to electr... [more] |
ED2008-224 SDM2008-216 pp.1-6 |