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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM, ED 2009-06-25
09:30		 Overseas Haeundae Grand Hotel, Busan, Korea [Invited Talk] MOS Transistors fabricated on Si(551) surface based on radical reaction processes
Akinobu Teramoto, Weitao Cheng, Chingfoa Tye, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) ED2009-84 SDM2009-79		 Though the electron mobility in the channel of MOSFET on Si(100) surface which is currently used for LSI devices is larg... [more] ED2009-84 SDM2009-79
pp.149-152
SDM 2008-10-10
14:30		 Miyagi Tohoku Univ. Impact of Fully Depleted Silicon-On-Insulator Accumualation-mode CMOS on Si(110)
Ching Foa Tye, Weitao Cheng, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2008-164		 This paper demonstrates the characteristic of Accumulation-mode Fully Depleted Silicon-On-Insulator (Acc-FD-SOI) MOSFETs... [more] SDM2008-164
pp.51-56
SDM 2007-10-05
13:35		 Miyagi Tohoku Univ. High Performance Accumulation Mode FD-SOI MOSFETs on Si(100) and (110) Surfaces
Weitao Cheng, Akinobu Teramoto, Rihito Kuroda, Chingfoa Tye, Syunichi Watabe, Tomoyuki Suwa, Tetsuya Goto, Fuminobu Imaizumi, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2007-187		  [more] SDM2007-187
pp.45-48
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