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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 7 of 7  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
IN, NS, CS, NV
(Joint)		 2018-09-07
10:10		 Miyagi Research Institute of Electrical Communication, Tohoku Univ. Bistability of IEEE 802.11 DCF in Saturated/Non-saturated Boundary Region
Taiki Tubotani, Xiang Li, Shigeo Shioda (Chiba Univ.) NS2018-101		 There exist two stable states of a IEEE-802.11-DCF-based wireless LAN (WLAN) in a region where the amount of frames tran... [more] NS2018-101
pp.77-82
CQ 2018-06-01
11:20		 Chiba Chiba Univ. Nishi-Chiba Campus, academic link center Mean Field Approximation Analysis and Bistability of IEEE 802.11 DCF in a Saturated/Non-saturated Boundary Region
Xiang Li, Shigeo Shioda (Chiba Univ.) CQ2018-25		 Using the analysis model of IEEE 802.11 DCF with mean field approximation, we show that the wireless LAN (WLAN) based on... [more] CQ2018-25
pp.43-48
NS, IN
(Joint)		 2017-03-03
15:10		 Okinawa OKINAWA ZANPAMISAKI ROYAL HOTEL Performance Analysis of the IEEE 802.11 DCF Based on a Macroscopic State Description Considering Frame-Size Variety
Xiang Li, Yuta Goto, Shigeo Shioda (Chiba Univ.) NS2016-243		  [more] NS2016-243
pp.493-498
CQ, ICM, NS
(Joint)		 2015-11-27
11:40		 Niigata Niigata University Performance Analysis of the IEEE 802.11 DCF Based on Continuous-Time Markov Chain
Yuki Narita, Xiang Li, Yuta Gotoh, Shigeo Shioda, Nobuyoshi Komuro, Hiroo Sekiya, Shiro Sakata (Chiba Univ.), Tutomu Murase (Nagoya Univ.), Gen Motoyoshi, Norio Yamagaki (NEC) NS2015-125		  [more] NS2015-125
pp.81-86
SDM 2014-10-16
14:50		 Miyagi Niche, Tohoku Univ. Introduction of Atomically Flattening of Silicon Surface in Shallow Trench Isolation Process Technology
Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.), Yuki Kumagai, Yutaka Kamata, Katsuhiko Shibusawa (LAPIS Semiconductor Miyagi) SDM2014-85		 Atomically flattening technology was introduced to the widely-used complementary metal oxide silicon (CMOS) process empl... [more] SDM2014-85
pp.7-12
SDM 2011-10-20
15:45		 Miyagi Tohoku Univ. (Niche) On the relation between interface flattening effect and insulator breakdown characteristic of radical reaction based insulator formation technology
Rihito Kuroda, Akinobu Teramoto, Xiang Li, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2011-101		  [more] SDM2011-101
pp.21-26
ED, SDM 2010-07-02
12:15		 Tokyo Tokyo Inst. of Tech. Ookayama Campus High Integrity Gate Insulator Films on Atomically Flat Silicon Surface
Xiang Li, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) ED2010-93 SDM2010-94		 A low temperature atomically flattening technology for Si(100) wafer is developed. By annealing in ultra pure argon ambi... [more] ED2010-93 SDM2010-94
pp.183-188
 Results 1 - 7 of 7  /   
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