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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
IN, NS, CS, NV (Joint) |
2018-09-07 10:10 |
Miyagi |
Research Institute of Electrical Communication, Tohoku Univ. |
Bistability of IEEE 802.11 DCF in Saturated/Non-saturated Boundary Region Taiki Tubotani, Xiang Li, Shigeo Shioda (Chiba Univ.) NS2018-101 |
There exist two stable states of a IEEE-802.11-DCF-based wireless LAN (WLAN) in a region where the amount of frames tran... [more] |
NS2018-101 pp.77-82 |
CQ |
2018-06-01 11:20 |
Chiba |
Chiba Univ. Nishi-Chiba Campus, academic link center |
Mean Field Approximation Analysis and Bistability of IEEE 802.11 DCF in a Saturated/Non-saturated Boundary Region Xiang Li, Shigeo Shioda (Chiba Univ.) CQ2018-25 |
Using the analysis model of IEEE 802.11 DCF with mean field approximation, we show that the wireless LAN (WLAN) based on... [more] |
CQ2018-25 pp.43-48 |
NS, IN (Joint) |
2017-03-03 15:10 |
Okinawa |
OKINAWA ZANPAMISAKI ROYAL HOTEL |
Performance Analysis of the IEEE 802.11 DCF Based on a Macroscopic State Description Considering Frame-Size Variety Xiang Li, Yuta Goto, Shigeo Shioda (Chiba Univ.) NS2016-243 |
[more] |
NS2016-243 pp.493-498 |
CQ, ICM, NS (Joint) |
2015-11-27 11:40 |
Niigata |
Niigata University |
Performance Analysis of the IEEE 802.11 DCF Based on Continuous-Time Markov Chain Yuki Narita, Xiang Li, Yuta Gotoh, Shigeo Shioda, Nobuyoshi Komuro, Hiroo Sekiya, Shiro Sakata (Chiba Univ.), Tutomu Murase (Nagoya Univ.), Gen Motoyoshi, Norio Yamagaki (NEC) NS2015-125 |
[more] |
NS2015-125 pp.81-86 |
SDM |
2014-10-16 14:50 |
Miyagi |
Niche, Tohoku Univ. |
Introduction of Atomically Flattening of Silicon Surface in Shallow Trench Isolation Process Technology Tetsuya Goto, Rihito Kuroda, Naoya Akagawa, Tomoyuki Suwa, Akinobu Teramoto, Xiang Li, Toshiki Obara, Daiki Kimoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.), Yuki Kumagai, Yutaka Kamata, Katsuhiko Shibusawa (LAPIS Semiconductor Miyagi) SDM2014-85 |
Atomically flattening technology was introduced to the widely-used complementary metal oxide silicon (CMOS) process empl... [more] |
SDM2014-85 pp.7-12 |
SDM |
2011-10-20 15:45 |
Miyagi |
Tohoku Univ. (Niche) |
On the relation between interface flattening effect and insulator breakdown characteristic of radical reaction based insulator formation technology Rihito Kuroda, Akinobu Teramoto, Xiang Li, Tomoyuki Suwa, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2011-101 |
[more] |
SDM2011-101 pp.21-26 |
ED, SDM |
2010-07-02 12:15 |
Tokyo |
Tokyo Inst. of Tech. Ookayama Campus |
High Integrity Gate Insulator Films on Atomically Flat Silicon Surface Xiang Li, Rihito Kuroda, Tomoyuki Suwa, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) ED2010-93 SDM2010-94 |
A low temperature atomically flattening technology for Si(100) wafer is developed. By annealing in ultra pure argon ambi... [more] |
ED2010-93 SDM2010-94 pp.183-188 |
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