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Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, LQE, CPM 2012-11-30
14:55		 Osaka Osaka City University The Effect of Carrier Transport and Thermal Activation Processes on Non-radiative Carrier Recombination Processes in InN Films
Daichi Imai, Yoshihiro Ishitani (Chiba Univ.), Xinqiang Wang (Peking Univ.), Kazuhide Kusakabe, Akihiko Yoshikawa (Chiba Univ. SMART) ED2012-87 CPM2012-144 LQE2012-115		 Carrier transition processes via deep states leading to the reduction of the band edge radiative recombination efficienc... [more] ED2012-87 CPM2012-144 LQE2012-115
pp.103-108
LQE, ED, CPM 2008-11-27
15:00		 Aichi Nagoya Institute of Technology Achieving P-type InN and Its Characterization -- Present Status and Future Prospects --
Akihiko Yoshikawa, Xinqiang Wang, Song-Bek Che, Yoshihiro Ishitani (Chiba Univ.) ED2008-162 CPM2008-111 LQE2008-106		  [more] ED2008-162 CPM2008-111 LQE2008-106
pp.45-50
CPM, ED, LQE 2007-10-12
14:40		 Fukui Fukui Univ. Fabrication of novel InN/GaN multi-quantum wells consisting of one-monolayer InN wells in GaN matrix for application for new structure light emitting devices
Naoki Hashimoto, Akihiko Yuki, Hideyuki Saito (Chiba Univ.), Xinqiang Wang (JST), Song-Bek Che, Yoshihiro Ishitani, Akihiko Yoshikawa (Chiba Univ./JST) ED2007-175 CPM2007-101 LQE2007-76		 In order to clarify RF-MBE growth mechanism of ultrathin InN on Ga-polarity GaN, we investigated tolal supply of InN dep... [more] ED2007-175 CPM2007-101 LQE2007-76
pp.93-96
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