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Committee Date Time Place Paper Title / Authors Abstract Paper #
CPM 2008-10-30
13:25
Niigata Niigata Univ. Epitaxial growth of III-V nitride semiconductor films by pulse-mode hot-mesh CVD
Yasuaki Komae, Takeshi Saitou (Nagaoka Univ of Tech), Maki Suemitsu, Takashi Ito, Tetsuo Endoh (CIR of Tohoku Univ), Hideki Nakazawa (FST of Hirosaki Univ), Yuzuru Narita (Kyushu Inst. of Tech.), Masasuke Takata, Kanji Yasui, Tadashi Akahane (Nagaoka Univ of Tech) CPM2008-76
Intermittent gas supplies in hot-mesh CVD for the epitaxial growth of gallium nitride (GaN) were investigated for the im... [more] CPM2008-76
pp.7-12
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