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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
OPE, LQE 2016-06-17
11:00
Tokyo   25-Gbps error-free operation of Si-photonics transmitter over 20-75 degree Celsius with integrated quantum dot laser
Jun Ushida, Kenichiro Yashiki, Kenji Mizutani, Yasuyuki Suzuki, Mitsuru Kurihara, Masatoshi Tokushima, Junichi Fujikata, Yasuhiko Hagihara, Kazuhiko Kurata (PETRA) OPE2016-10 LQE2016-20
Si-photonics optical transmitter was fabricated using quantum dot laser (QDL) light sources for multimode-fiber (MMF) tr... [more] OPE2016-10 LQE2016-20
pp.7-10
ICD, SDM 2007-08-23
14:35
Hokkaido Kitami Institute of Technology An Optimal Supply Voltage Determiner Circuit for Minimum Energy Operations
Yoshifumi Ikenaga, Masahiro Nomura, Yoetsu Nakazawa, Yasuhiko Hagihara (NEC Corp.) SDM2007-151 ICD2007-79
 [more] SDM2007-151 ICD2007-79
pp.57-62
ICD 2006-04-14
11:40
Oita Oita University Redefinition of Write Margin for Next-Generation SRAMs and Write-Margin Monitoring Circuits
Koichi Takeda, Hidetoshi Ikeda, Yasuhiko Hagihara, Masahiro Nomura (NEC), Hiroyuki Kobatake (NECEL)
 [more] ICD2006-16
pp.85-90
ICD, SDM 2005-08-18
14:55
Hokkaido HAKODATE KOKUSAI HOTEL Monitoring Scheme for Minimizing Power Consumption by Means of Supply and Threshold Voltage Control in Active and Standby Modes
Yoshifumi Ikenaga, Masahiro Nomura, Koichi Takeda, Yoetsu Nakazawa (NEC), Yoshiharu Aimoto (NECEL), Yasuhiko Hagihara (NEC)
(Advance abstract in Japanese is available) [more] SDM2005-139 ICD2005-78
pp.67-72
ICD 2005-04-14
09:00
Fukuoka   A Read-Static-Noise-Margin-Free SRAM cell for low-Vdd and High-speed applications
Koichi Takeda, Yasuhiko Hagihara (NEC), Yoshiharu Aimoto (NECEL), Masahiro Nomura, Yoetsu Nakazawa (NEC), Toshio Ishii, Hiroyuki Kobatake (NECEL)
A read-static-noise-margin-free SRAM cell consists of seven transistors, several of which are low-Vt NMOS transistors us... [more] ICD2005-1
pp.1-6
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