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All Technical Committee Conferences (Searched in: Recent 10 Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
OPE, LQE, OCS |
2024-10-17 13:00 |
Yamaguchi |
(Yamaguchi) |
[Invited Talk]
Ultra-high speed EO-polymer/Si hybrid optical modulator and Ge photodetector Junichi Fujikata (Tokushima Univ.), Yasuhiko Ishikawa (Toyohasi Univ. of Tech.), Shiyoshi Yokoyama (Kyushu Univ.) OCS2024-28 OPE2024-81 LQE2024-28 |
[more] |
OCS2024-28 OPE2024-81 LQE2024-28 pp.24-29 |
CPM, ED, SDM |
2023-05-19 16:05 |
Aichi |
Nagoya Institute of Technology (Aichi, Online) (Primary: On-site, Secondary: Online) |
Effect of Ge Epitaxial Buffer Layer on Solid Phase Growth of Ge on Si Satoki Furuya, Mikiya Kuzutani, Jose A. Piedra-Lorenzana, Takeshi Hizawa, Keisuke Yamane, Yasuhiko Ishikawa (Toyohashi Univ. Tech.) ED2023-6 CPM2023-6 SDM2023-23 |
[more] |
ED2023-6 CPM2023-6 SDM2023-23 pp.24-27 |
CPM, ED, SDM |
2023-05-19 17:20 |
Aichi |
Nagoya Institute of Technology (Aichi, Online) (Primary: On-site, Secondary: Online) |
AlN film by reactive sputtering as a stressor for Ge photonic devices on Si Jose A. Piedra-Lorenzana, Shohei Kaneko, Takaaki Fukushima, Keisuke Yamane (Toyohashi Univ. Tec.), Junichi Fujikata (Tokushima Univ.), Yasuhiko Ishikawa (Toyohashi Univ. Tec.) ED2023-9 CPM2023-9 SDM2023-26 |
AlN deposited by reactive sputtering is studied as an external stressor for controlling the operating wavelength of near... [more] |
ED2023-9 CPM2023-9 SDM2023-26 pp.36-39 |
SDM, ED, CPM |
2022-05-27 14:40 |
Online |
Online (Online) |
Reactive Sputtering of Nitride Dielectric Film for Silicon Photonics Applications Takaaki Fukushima, Jose A. Piedra Lorenzana, Rui Tsuchiya, Takeshi Hizawa, Yasuhiko Ishikawa (Toyohashi Univ. Tech.) ED2022-10 CPM2022-4 SDM2022-17 |
SiNx possesses a thermo-optic coefficient smaller by approximately one order of magnitude than that of Si, being effecti... [more] |
ED2022-10 CPM2022-4 SDM2022-17 pp.13-16 |
ED, SDM, CPM |
2021-05-27 13:45 |
Online |
Online (Online) |
Bandgap control for Ge epitaxial layer on Si using sub-micron wire structure Manami Shimokawa, Shuhei Sonoi, Riku Katamawari, Yasuhiko Ishikawa (TUT) ED2021-2 CPM2021-2 SDM2021-13 |
Ge epitaxial layer on Si has been used in silicon photonics as a material for photodetectors and optical intensity modul... [more] |
ED2021-2 CPM2021-2 SDM2021-13 pp.7-10 |
SDM, ED, CPM |
2019-05-16 13:25 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) (Shizuoka) |
Dark Current Characteristics for Near-infrared pin Photodiodes of Ge Layer on Si Mayu Tachibana, Shuhei Sonoi, Yasuhiko Ishikawa (Toyohashi Univ. Tech.) ED2019-11 CPM2019-2 SDM2019-9 |
Near-infrared pin photodiodes for silicon photonics are fabricated using Ge layers epitaxially grown on Si by ultrahigh-... [more] |
ED2019-11 CPM2019-2 SDM2019-9 pp.5-8 |
SDM, ED, CPM |
2019-05-16 14:40 |
Shizuoka |
Shizuoka Univ. (Hamamatsu) (Shizuoka) |
Characterizations of lattice strain and optical properties for Ge layers epitaxially grown on bonded Si-on-Quartz substrate Kyosuke Noguchi (Toyohashi Univ. Tech.), Michiharu Nishimura (Univ. Tokyo), Junji Matui, Yoshiyuki Tsusaka (Univ. Hyogo), Yasuhiko Ishikawa (Toyohashi Univ. Tech.) ED2019-14 CPM2019-5 SDM2019-12 |
Ge epitaxial layers on Si-on-insulator (SOI) wafer have been widely used for photodetectors operating in the C band (1.5... [more] |
ED2019-14 CPM2019-5 SDM2019-12 pp.21-24 |
ED, CPM, SDM |
2018-05-24 16:15 |
Aichi |
Toyohashi Univ. of Tech. (VBL) (Aichi) |
Reduction of threading dislocation density in Ge layers on Si by introducing tunnel-shaped voids Motoki Yako (Univ. of Tokyo), Yasuhiko Ishikawa (Toyohashi Univ. of Tech.), Kazumi Wada (Massachusetts Inst. Tech.) ED2018-20 CPM2018-7 SDM2018-15 |
[more] |
ED2018-20 CPM2018-7 SDM2018-15 pp.29-32 |
LQE |
2018-02-23 10:35 |
Kanagawa |
(Kanagawa) |
[Special Invited Talk]
Epitaxial Growth of Ge on Si and Photodetector Applications Yasuhiko Ishikawa (Toyohashi Univ. Tech.) LQE2017-152 |
Epitaxial growth of Ge layers on Si and applications to photodetectors (PDs) in the optical communication wavelength ran... [more] |
LQE2017-152 pp.7-10 |
OFT, OCS, OPE (Joint) [detail] |
2016-02-19 09:00 |
Okinawa |
Okinawa Univ. (Okinawa) |
High-performance Ge-on-Si Near-infrared Photodiodes Yasuhiko Ishikawa, Yuji Miyasaka, Kazuki Ito, Sho Nagatomo, Kazumi Wada (Univ. Tokyo) OCS2015-107 OFT2015-62 OPE2015-227 |
Near-infrared photodiodes for Si photonics are fabricated using Ge epitaxial layers on Si grown by
ultrahigh-vacuum che... [more] |
OCS2015-107 OFT2015-62 OPE2015-227 pp.39-42(OCS), pp.39-42(OFT), pp.65-68(OPE) |
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