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All Technical Committee Conferences  (Searched in: Recent 10 Years)

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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 10 of 10  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
OPE, LQE, OCS 2024-10-17
13:00
Yamaguchi (Yamaguchi) [Invited Talk] Ultra-high speed EO-polymer/Si hybrid optical modulator and Ge photodetector
Junichi Fujikata (Tokushima Univ.), Yasuhiko Ishikawa (Toyohasi Univ. of Tech.), Shiyoshi Yokoyama (Kyushu Univ.) OCS2024-28 OPE2024-81 LQE2024-28
 [more] OCS2024-28 OPE2024-81 LQE2024-28
pp.24-29
CPM, ED, SDM 2023-05-19
16:05
Aichi Nagoya Institute of Technology (Aichi, Online)
(Primary: On-site, Secondary: Online)
Effect of Ge Epitaxial Buffer Layer on Solid Phase Growth of Ge on Si
Satoki Furuya, Mikiya Kuzutani, Jose A. Piedra-Lorenzana, Takeshi Hizawa, Keisuke Yamane, Yasuhiko Ishikawa (Toyohashi Univ. Tech.) ED2023-6 CPM2023-6 SDM2023-23
 [more] ED2023-6 CPM2023-6 SDM2023-23
pp.24-27
CPM, ED, SDM 2023-05-19
17:20
Aichi Nagoya Institute of Technology (Aichi, Online)
(Primary: On-site, Secondary: Online)
AlN film by reactive sputtering as a stressor for Ge photonic devices on Si
Jose A. Piedra-Lorenzana, Shohei Kaneko, Takaaki Fukushima, Keisuke Yamane (Toyohashi Univ. Tec.), Junichi Fujikata (Tokushima Univ.), Yasuhiko Ishikawa (Toyohashi Univ. Tec.) ED2023-9 CPM2023-9 SDM2023-26
AlN deposited by reactive sputtering is studied as an external stressor for controlling the operating wavelength of near... [more] ED2023-9 CPM2023-9 SDM2023-26
pp.36-39
SDM, ED, CPM 2022-05-27
14:40
Online Online (Online) Reactive Sputtering of Nitride Dielectric Film for Silicon Photonics Applications
Takaaki Fukushima, Jose A. Piedra Lorenzana, Rui Tsuchiya, Takeshi Hizawa, Yasuhiko Ishikawa (Toyohashi Univ. Tech.) ED2022-10 CPM2022-4 SDM2022-17
SiNx possesses a thermo-optic coefficient smaller by approximately one order of magnitude than that of Si, being effecti... [more] ED2022-10 CPM2022-4 SDM2022-17
pp.13-16
ED, SDM, CPM 2021-05-27
13:45
Online Online (Online) Bandgap control for Ge epitaxial layer on Si using sub-micron wire structure
Manami Shimokawa, Shuhei Sonoi, Riku Katamawari, Yasuhiko Ishikawa (TUT) ED2021-2 CPM2021-2 SDM2021-13
Ge epitaxial layer on Si has been used in silicon photonics as a material for photodetectors and optical intensity modul... [more] ED2021-2 CPM2021-2 SDM2021-13
pp.7-10
SDM, ED, CPM 2019-05-16
13:25
Shizuoka Shizuoka Univ. (Hamamatsu) (Shizuoka) Dark Current Characteristics for Near-infrared pin Photodiodes of Ge Layer on Si
Mayu Tachibana, Shuhei Sonoi, Yasuhiko Ishikawa (Toyohashi Univ. Tech.) ED2019-11 CPM2019-2 SDM2019-9
Near-infrared pin photodiodes for silicon photonics are fabricated using Ge layers epitaxially grown on Si by ultrahigh-... [more] ED2019-11 CPM2019-2 SDM2019-9
pp.5-8
SDM, ED, CPM 2019-05-16
14:40
Shizuoka Shizuoka Univ. (Hamamatsu) (Shizuoka) Characterizations of lattice strain and optical properties for Ge layers epitaxially grown on bonded Si-on-Quartz substrate
Kyosuke Noguchi (Toyohashi Univ. Tech.), Michiharu Nishimura (Univ. Tokyo), Junji Matui, Yoshiyuki Tsusaka (Univ. Hyogo), Yasuhiko Ishikawa (Toyohashi Univ. Tech.) ED2019-14 CPM2019-5 SDM2019-12
Ge epitaxial layers on Si-on-insulator (SOI) wafer have been widely used for photodetectors operating in the C band (1.5... [more] ED2019-14 CPM2019-5 SDM2019-12
pp.21-24
ED, CPM, SDM 2018-05-24
16:15
Aichi Toyohashi Univ. of Tech. (VBL) (Aichi) Reduction of threading dislocation density in Ge layers on Si by introducing tunnel-shaped voids
Motoki Yako (Univ. of Tokyo), Yasuhiko Ishikawa (Toyohashi Univ. of Tech.), Kazumi Wada (Massachusetts Inst. Tech.) ED2018-20 CPM2018-7 SDM2018-15
 [more] ED2018-20 CPM2018-7 SDM2018-15
pp.29-32
LQE 2018-02-23
10:35
Kanagawa (Kanagawa) [Special Invited Talk] Epitaxial Growth of Ge on Si and Photodetector Applications
Yasuhiko Ishikawa (Toyohashi Univ. Tech.) LQE2017-152
Epitaxial growth of Ge layers on Si and applications to photodetectors (PDs) in the optical communication wavelength ran... [more] LQE2017-152
pp.7-10
OFT, OCS, OPE
(Joint) [detail]
2016-02-19
09:00
Okinawa Okinawa Univ. (Okinawa) High-performance Ge-on-Si Near-infrared Photodiodes
Yasuhiko Ishikawa, Yuji Miyasaka, Kazuki Ito, Sho Nagatomo, Kazumi Wada (Univ. Tokyo) OCS2015-107 OFT2015-62 OPE2015-227
Near-infrared photodiodes for Si photonics are fabricated using Ge epitaxial layers on Si grown by
ultrahigh-vacuum che... [more]
OCS2015-107 OFT2015-62 OPE2015-227
pp.39-42(OCS), pp.39-42(OFT), pp.65-68(OPE)
 Results 1 - 10 of 10  /   
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