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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 20 of 29  /  [Next]  
Committee Date Time Place Paper Title / Authors Abstract Paper #
ED, SDM, CPM 2021-05-27
Online Online Fabrication and Evaluation of Single-Electron Devices Formed by Single-Layered Fe Nanodot Array
Takayuki Gyakushi, Yuki Asai, Beommo Byun, Ikuma Amano, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2021-6 CPM2021-6 SDM2021-17
Recently, novel information processing techniques using nanoscale devices, such as neural networks and reconfigurable co... [more] ED2021-6 CPM2021-6 SDM2021-17
CPM, ED, SDM 2020-05-29
Aichi Nagoya Institute of Technology
(Cancelled, technical report was not issued)
Fabrication and evaluation of single-electron devices formed by Fe nanodot array
Takayuki Gyakushi, Yuki Asai, Beommo Byun, Ikuma Amano, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.)
SDM, ED, CPM 2019-05-16
Shizuoka Shizuoka Univ. (Hamamatsu) Evaluation of switching characteristics of Ta2O5-δ based analog resistive memory using Cu and Ta top electrode
Yuanlin Li, Atsushi Tsurumaki-Fukuchi, Masashi Arita (Hokkaido Univ.), Takashi Morie (Kyushu Inst. Tech.), Yasuo Takahashi (Hokkaido Univ.) ED2019-16 CPM2019-7 SDM2019-14
We present the differences of two mechanisms’ initial states and multilevel switching behavior using Ta2O5-δ ReRAM. For ... [more] ED2019-16 CPM2019-7 SDM2019-14
ED, SDM 2018-02-28
Hokkaido Centennial Hall, Hokkaido Univ. Electrical Characteristics of Single-Electron Transistor Made of Fe-MgF2 Single-Layer Granular Thin Films
Yuki Asai, Shusaku Honjo, Takayuki Gyakushi, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2017-104 SDM2017-104
Single-electron transistor (SET) is the expected future integrated device with very low power consumption in operation a... [more] ED2017-104 SDM2017-104
MW, EMCJ, EST, IEE-EMC [detail] 2017-10-19
Akita Yupopo Characteristics of Vibrating Intrinsic Reverberation Chamber
Makoto Hara, Yasuo Takahashi (KHI), Robert Vogt-Ardatjew, Frank Leferink (Univ. of Twente) EMCJ2017-39 MW2017-91 EST2017-54
We have built a vibrating intrinsic reverberation chamber (VIRC) that is one of the currently used reverberation chamber... [more] EMCJ2017-39 MW2017-91 EST2017-54
ED, SDM 2017-02-24
Hokkaido Centennial Hall, Hokkaido Univ. Fabrication and evaluation of silicon triple quantum dots with a compact device structure
Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita (IST. Hokkaido Univ.), Akira Fujiwara (NTT BRL), Yasuo Takahashi (IST. Hokkaido Univ.) ED2016-130 SDM2016-147
Silicon-based multiple quantum-dot with a scalable gate architecture is a promising candidate for quantum information pr... [more] ED2016-130 SDM2016-147
ICD 2016-04-14
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Visualization of Filament of ReRAM during Resistive Switching by in-situ Transmission Electron Microscopy
Yasuo Takahashi (Hokkaido Univ.), Masaki Kudo (Kyusyu Univ.), Masashi Arita (Hokkaido Univ.) ICD2016-5
Resistive random access memories (ReRAMs) have been investigated as a next generation non-volatile memory, where 16-Gbit... [more] ICD2016-5
Tokyo Tamagawa University An STDP control circuit and its evaluation using a Cu-MoOx-Al resistance change memory fabricated on a Si MOSFET
Kazumasa Tomizaki, Takashi Morie, Hideyuki Ando (Kyushu Inst. Tech.), Atsushi Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) NC2015-70
With the progress of practical implementation of deep learning in neural networks, high-speed and low-power neural hardw... [more] NC2015-70
SDM, ED 2015-02-05
Hokkaido Hokkaido Univ. Highly functionality of three-terminal nanodot array for multi-input and multi-output devices
Isamu Yoshioka, Hikaru Satoh, Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita (Hokkaido Univ.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ.) ED2014-141 SDM2014-150
Nanodot-array single-electron devices with multi-inputs and multi-outputs achieve higher functionality that conventional... [more] ED2014-141 SDM2014-150
ED, SDM 2014-02-28
Hokkaido Hokkaido Univ. Centennial Hall Direct observation of conductive filaments during MoOx/Cu ReRAM switching
Yuuki Ohno, Takahiro Hiroi, Masaki Kudo, Kouichi Hamada, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2013-148 SDM2013-163
While a conductive filament formed by movement of the metal ions in the solid electrolyte is considered as the mechanism... [more] ED2013-148 SDM2013-163
SDM, ED 2013-02-28
Hokkaido Hokkaido Univ. Characteristics of double quantum dot Si single-electron transisor caused by the number change of electrons in quantum dot
Takafumi Uchida, Hiroto Takenaka, Isamu Yoshioka, Masashi Arita (Hokkaido Univ), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ) ED2012-138 SDM2012-167
A double quantum-dot (DQD) device is expected as a key device for quantum information processing as well as a single-ele... [more] ED2012-138 SDM2012-167
ED, SDM 2012-02-07
Hokkaido   High-Frequency Properties of Si Single-Electron Transistors Fabricated by Pattern-Dependent Oxidation
Hiroto Takenaka, Michito Shinohara, Takafumi Uchida, Masashi Arita (Hokkaido Uni.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Uni.) ED2011-145 SDM2011-162
Single electron transistor (SET) is a low power device. However, the high frequency operation properties have not been i... [more] ED2011-145 SDM2011-162
ED, SDM 2012-02-08
Hokkaido   Electrical characteristics of MgF_(2)/Fe/MgF_(2) thin films
Takuma Ishikawa, Eita Sato, Kouichi Hamada, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2011-152 SDM2011-169
On carefully prepared SiO2/Si substrates, MgF2/Fe-nanodots/MgF2 granular films were prepared, and fundamental electric p... [more] ED2011-152 SDM2011-169
CS, IPSJ-AVM, ITE-BCT, IE [detail] 2011-12-16
Aichi Nagoya Univ. A proposal for rapid diffusion of digital terrestrial broadcasting in foreign countries by ISDB-T technology -- easy construction of broadcast infrastructure in non-electrified areas --
Yasuo Takahashi (YTC P&C)
SDM, ED 2011-02-24
Hokkaido Hokkaido Univ. Electrical Characteristics of Si Single-Electron Transistor with Single-Carrier Trap Formed by Photo-Irradiation
Michito Shinohara, Yuki Kato, Kei Mikami, Masashi Arita (Hokkaido Univ), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ) ED2010-203 SDM2010-238
It is well known that step-like current jumps are observed when huge vertical electric field are applied to a Si single-... [more] ED2010-203 SDM2010-238
SDM, ED 2009-06-25
Overseas Haeundae Grand Hotel, Busan, Korea [Invited Talk] Novel-Functional Single-Electron Devices Using Silicon Nanodot Array
Yasuo Takahashi, Takuya Kaizawa, Mingyu Jo, Masashi Arita (Hokkaido Univ.), Akira Fujiwar, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Jung-Bum Choi (Chungbuk National Univ.) ED2009-83 SDM2009-78
We demonstrate a highly functional Si nanodot array device that operates by means of single-electron effects. The device... [more] ED2009-83 SDM2009-78
SDM, ED 2009-06-26
Overseas Haeundae Grand Hotel, Busan, Korea Fabrication of double-dot single-electron transistor in silicon nanowire
Mingyu Jo, Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara, Yukinori Ono (NTT), Hiroshi Inokawa (Shizuoka Univ.), Jung-Bum Choi (Chungbuk National Univ.), Yasuo Takahashi (Hokkaido Univ.) ED2009-94 SDM2009-89
We propose a simple method for the fabrication of Si single-electron transistors (SET) with coupled dots by means of pat... [more] ED2009-94 SDM2009-89
SDM, ED 2009-02-27
Hokkaido Hokkaido Univ. Dual-dot single-electron transistor fabricated in silicon nanowire
Mingyu Jo, Takuya Kaizawa, Masashi Arita (Hokkaido Univ.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ.) ED2008-233 SDM2008-225
It is well known that a Si single-electron transistor (SET) is automatically fabricated by means of pattern-dependent ox... [more] ED2008-233 SDM2008-225
SDM, ED 2009-02-27
Hokkaido Hokkaido Univ. The fourth passive circuit element relating magnetic flux to charge
Yoshihito Amemiya, Yasuo Takahashi (Hokkaido Univ.) ED2008-236 SDM2008-228
 [more] ED2008-236 SDM2008-228
EMCJ 2009-01-23
Fukuoka   Evaluation of lightning strip protection area using FDTD method
Masato Kawabata (Fukuoka Industrial Technology Center), Taisuke Tokunaga, Masafumi Miyoshi, Yasuo Takahashi (KHI) EMCJ2008-113
A Radome is a weatherproof enclosure that protects antenna from rain and hail impact and so on. In any case, radomes are... [more] EMCJ2008-113
 Results 1 - 20 of 29  /  [Next]  
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