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All Technical Committee Conferences (Searched in: Recent 10 Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| ED, SDM, CPM | 2021-05-27 15:40 |
Online | Online (Online) | Fabrication and Evaluation of Single-Electron Devices Formed by Single-Layered Fe Nanodot Array Takayuki Gyakushi, Yuki Asai, Beommo Byun, Ikuma Amano, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.)  ED2021-6 CPM2021-6 SDM2021-17 |
Recently, novel information processing techniques using nanoscale devices, such as neural networks and reconfigurable co... [more] | ED2021-6 CPM2021-6 SDM2021-17 pp.23-26 |
| CPM, ED, SDM | 2020-05-29 16:25 |
Aichi | Nagoya Institute of Technology (Aichi) (Cancelled, technical report was not issued) |
Fabrication and evaluation of single-electron devices formed by Fe nanodot array Takayuki Gyakushi, Yuki Asai, Beommo Byun, Ikuma Amano, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) |
[more] | |
| SDM, ED, CPM | 2019-05-16 16:15 |
Shizuoka | Shizuoka Univ. (Hamamatsu) (Shizuoka) | Evaluation of switching characteristics of Ta2O5-δ based analog resistive memory using Cu and Ta top electrode Yuanlin Li, Atsushi Tsurumaki-Fukuchi, Masashi Arita (Hokkaido Univ.), Takashi Morie (Kyushu Inst. Tech.), Yasuo Takahashi (Hokkaido Univ.) ED2019-16 CPM2019-7 SDM2019-14 |
We present the differences of two mechanisms’ initial states and multilevel switching behavior using Ta2O5-δ ReRAM. For ... [more] | ED2019-16 CPM2019-7 SDM2019-14 pp.29-34 |
| ED, SDM | 2018-02-28 10:00 |
Hokkaido | Centennial Hall, Hokkaido Univ. (Hokkaido) | Electrical Characteristics of Single-Electron Transistor Made of Fe-MgF2 Single-Layer Granular Thin Films Yuki Asai, Shusaku Honjo, Takayuki Gyakushi, Atsushi Tsurumaki-Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) ED2017-104 SDM2017-104 |
Single-electron transistor (SET) is the expected future integrated device with very low power consumption in operation a... [more] | ED2017-104 SDM2017-104 pp.1-6 |
| MW, EMCJ, EST, IEE-EMC [detail] | 2017-10-19 16:00 |
Akita | Yupopo (Akita) | Characteristics of Vibrating Intrinsic Reverberation Chamber Makoto Hara, Yasuo Takahashi (KHI), Robert Vogt-Ardatjew, Frank Leferink (Univ. of Twente) EMCJ2017-39 MW2017-91 EST2017-54 |
We have built a vibrating intrinsic reverberation chamber (VIRC) that is one of the currently used reverberation chamber... [more] | EMCJ2017-39 MW2017-91 EST2017-54 pp.73-77 |
| ED, SDM | 2017-02-24 10:00 |
Hokkaido | Centennial Hall, Hokkaido Univ. (Hokkaido) | Fabrication and evaluation of silicon triple quantum dots with a compact device structure Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita (IST. Hokkaido Univ.), Akira Fujiwara (NTT BRL), Yasuo Takahashi (IST. Hokkaido Univ.) ED2016-130 SDM2016-147 |
Silicon-based multiple quantum-dot with a scalable gate architecture is a promising candidate for quantum information pr... [more] | ED2016-130 SDM2016-147 pp.1-6 |
| ICD | 2016-04-14 13:00 |
Tokyo | Kikai-Shinko-Kaikan Bldg. (Tokyo) | [Invited Lecture]
Visualization of Filament of ReRAM during Resistive Switching by in-situ Transmission Electron Microscopy Yasuo Takahashi (Hokkaido Univ.), Masaki Kudo (Kyusyu Univ.), Masashi Arita (Hokkaido Univ.) ICD2016-5 |
Resistive random access memories (ReRAMs) have been investigated as a next generation non-volatile memory, where 16-Gbit... [more] | ICD2016-5 pp.21-26 |
| MBE, NC (Joint) |
2016-03-22 11:00 |
Tokyo | Tamagawa University (Tokyo) | An STDP control circuit and its evaluation using a Cu-MoOx-Al resistance change memory fabricated on a Si MOSFET Kazumasa Tomizaki, Takashi Morie, Hideyuki Ando (Kyushu Inst. Tech.), Atsushi Fukuchi, Masashi Arita, Yasuo Takahashi (Hokkaido Univ.) NC2015-70 |
With the progress of practical implementation of deep learning in neural networks, high-speed and low-power neural hardw... [more] | NC2015-70 pp.7-12 |
| SDM, ED | 2015-02-05 15:05 |
Hokkaido | Hokkaido Univ. (Hokkaido) | Highly functionality of three-terminal nanodot array for multi-input and multi-output devices Isamu Yoshioka, Hikaru Satoh, Takafumi Uchida, Atsushi Tsurumaki-Fukuchi, Masashi Arita (Hokkaido Univ.), Akira Fujiwara (NTT), Yasuo Takahashi (Hokkaido Univ.) ED2014-141 SDM2014-150 |
Nanodot-array single-electron devices with multi-inputs and multi-outputs achieve higher functionality that conventional... [more] | ED2014-141 SDM2014-150 pp.17-22 |
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