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All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| CPM, ED, LQE | 2022-11-25 13:00 |
Aichi | Winc Aichi (Aichi Industry & Labor Center) (Primary: On-site, Secondary: Online) |
LED device operation of InGaN-based multiwavelength emission structures fabricated by a thermal reflow method Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.)  ED2022-43 CPM2022-68 LQE2022-76 |
Multiwavelength light emitters composed of InGaN-based microstructures without phosphors impact various fields such as s... [more] | ED2022-43 CPM2022-68 LQE2022-76 pp.85-88 |
| LQE, CPM, ED | 2020-11-26 11:55 |
Online | Online | 265 nm AlGaN-based LEDs grown on AlN substrates studied by electroluminescence and photoluminescence methods Ryota Ishii (Kyoto Univ.), Akira Yoshikawa, Kazuhiro Nagase (Asahi Kasei Corporation), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2020-6 CPM2020-27 LQE2020-57 |
[more] | ED2020-6 CPM2020-27 LQE2020-57 pp.21-24 |
| LQE, CPM, ED | 2020-11-27 15:40 |
Online | Online | High-efficiency light emissions by plasmonic nano-cavities and applications to quantum devices Koichi Okamoto, Seiya Kaito, Kohei Shimanoe, Fumiya Murao, Tetsuya Matsuyama, Kenji Wada (Osaka Pref. Univ.), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2020-25 CPM2020-46 LQE2020-76 |
Resonance with excitons in light-emitting materials and plasmon nano-cavities brings enhancements of the spontaneous emi... [more] | ED2020-25 CPM2020-46 LQE2020-76 pp.95-98 |
| CPM, LQE, ED | 2019-11-22 13:05 |
Shizuoka | Shizuoka Univ. (Hamamatsu) | Fabrication and optical characterization of ultrathin GaN quantum wells on AlN vicinal (0001) planes Mitsuru Funato, Hirotsugu Kobayashi, Yoichi Kawakami (Kyoto Univ.) ED2019-54 CPM2019-73 LQE2019-97 |
Ultra-thin GaN/AlN quantum wells at a mono-molecular layer (ML) level are fabricated on vicinal AlN (0001) substrates wi... [more] | ED2019-54 CPM2019-73 LQE2019-97 pp.89-92 |
| ED, LQE, CPM | 2018-11-29 13:00 |
Aichi | Nagoya Inst. tech. | Fabrication and optical anisotropy of GaN/AlN ultra-thin quantum wells Mitsuru Funato, Shuhei Ichikawa, Yoichi Kawakami (Kyoto Univ.) ED2018-32 CPM2018-66 LQE2018-86 |
[more] | ED2018-32 CPM2018-66 LQE2018-86 pp.1-4 |
| LQE | 2017-12-15 10:35 |
Tokyo | [Encouragement Talk]
Polar-plane-free faceted InGaN microstructures for highly efficient polychromatic emitters Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) LQE2017-86 |
InGaN quantum wells (QWs) grown on three dimensionally (3D) structured GaN are promising for phosphor-free white LEDs. H... [more] | LQE2017-86 pp.5-8 |
|
| LQE, CPM, ED | 2017-11-30 14:50 |
Aichi | Nagoya Inst. tech. | Optical properties of AlGaN quantum wires formed on AlN with macrostep surface Minehiro Hayakawa, Yuki Hayashi, Yuki Nagase, Shuhei Ichikawa, Kyosuke Kumamoto, Mami Shibaoka, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2017-52 CPM2017-95 LQE2017-65 |
Extensive studies on AlGaN/Al(Ga)N quantum wells recently achieved the commercialization of deep-ultraviolet LEDs. Howev... [more] | ED2017-52 CPM2017-95 LQE2017-65 pp.15-18 |
| CPM, LQE, ED | 2016-12-13 10:05 |
Kyoto | Kyoto University | Realization of multi-wavelength emission using polar plane-free InGaN multifacet quantum wells Yoshinobu Matsuda, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2016-70 CPM2016-103 LQE2016-86 |
InGaN quantum wells (QWs) grown on three dimensionally (3D) structured GaN are promising for phosphor-free white LEDs. H... [more] | ED2016-70 CPM2016-103 LQE2016-86 pp.67-70 |
| CPM, LQE, ED | 2016-12-13 10:30 |
Kyoto | Kyoto University | Crystal growth of bulk AlN by a clean process Katsuhiro Kishimoto, Wu PeiTsen, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2016-71 CPM2016-104 LQE2016-87 |
We have proposed Elementary source Vapor Phase Epitaxy (EVPE) as a new AlN bulk growth method, which is a simple and cle... [more] | ED2016-71 CPM2016-104 LQE2016-87 pp.71-74 |
| SAT, WBS (Joint) |
2016-05-19 15:50 |
Aichi | Nagoya Institute of Technology | [Special Talk]
Onboard antenna pointing control for geostationary multibeam satellites Yoichi Kawakami (HIU) SAT2016-6 |
Next-generation communication satellites with 30m class deployable onboard antennas are studied to complement mobile com... [more] | SAT2016-6 pp.31-36 |
| ED, LQE, CPM | 2015-11-26 16:30 |
Osaka | Osaka City University Media Center | Multi-wavelength excited Raman scattering spectroscopy for InGaN single layers Ryosuke Ishido, Ryota Ishii, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2015-79 CPM2015-114 LQE2015-111 |
Resonant Raman scattering spectroscopy is crucially useful in studying properties of light-emitting devices. However, it... [more] | ED2015-79 CPM2015-114 LQE2015-111 pp.59-62 |
| ED, LQE, CPM | 2015-11-26 16:55 |
Osaka | Osaka City University Media Center | Plasmonics with Aluminum applied to emission enhancements Koichi Okamoto, Kazutaka Tateishi, Shun Kawamoto, Haruku Nishida, Kaoru Tamada (Kyushu Univ.), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2015-80 CPM2015-115 LQE2015-112 |
The use of “Plasmonics” is one very promising method to improve the emission efficiencies of light-emitting diodes (LEDs... [more] | ED2015-80 CPM2015-115 LQE2015-112 pp.63-68 |
| LQE, ED, CPM | 2014-11-27 11:00 |
Osaka | Crystal growth of GaN-based nitride semiconductors on lattice-matched ScAlMgO4 Takuya Ozaki, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2014-74 CPM2014-131 LQE2014-102 |
Metalorganic vapor phase epitaxy (MOVPE) of GaN-based materials on ScAlMgO4 (SCAM) substrates is demonstrated. SCAM has ... [more] | ED2014-74 CPM2014-131 LQE2014-102 pp.5-8 |
|
| CPM, LQE, ED | 2013-11-28 16:40 |
Osaka | A novel method for crystallizations of aluminum nitride PeiTsen Wu, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2013-75 CPM2013-134 LQE2013-110 |
In this work, a new method of AlN crystal growth is proposed. AlN powders, whiskers, and films have successfully been sy... [more] | ED2013-75 CPM2013-134 LQE2013-110 pp.51-55 |
|
| ED, LQE, CPM | 2012-11-30 11:25 |
Osaka | Osaka City University | Effects of internal fields and potential inhomogeneity on the lasing properties of InGaN-based green laser diodes fabricated on (0001) polar substrates Yoon Seok Kim (Kyout Univ.), Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Takashi Miyoshi, Shin-ichi Nagahama (Nichia) ED2012-81 CPM2012-138 LQE2012-109 |
The optical properties of InGaN-based green (512 nm) laser structures fabricated on (0001) GaN substrates are investigat... [more] | ED2012-81 CPM2012-138 LQE2012-109 pp.71-74 |
| LQE, ED, CPM | 2011-11-18 09:30 |
Kyoto | Katsura Hall，Kyoto Univ. | Strain-Induced Effects on the Electronic Band Structure of AlN Ryota Ishii, Akio Kaneta, Ryan G. Banal, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2011-88 CPM2011-137 LQE2011-111 |
The top of the valence band structure in Wurtzite crystals is split to the irreducible representation of Γ1 and Γ5 by t... [more] |
ED2011-88 CPM2011-137 LQE2011-111 pp.77-80 |
| LQE, ED, CPM | 2011-11-18 11:10 |
Kyoto | Katsura Hall，Kyoto Univ. | Optical gain spectra in semipolar {20-21} oriented green InGaN LDs in comparison with (0001) LDs Yoon Seok Kim, Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.), Takashi Kyono, Masaki Ueno, Takao Nakamura (Sumitomo Electric) ED2011-92 CPM2011-141 LQE2011-115 |
[more] | ED2011-92 CPM2011-141 LQE2011-115 pp.99-102 |
| CPM, LQE, ED | 2010-11-11 14:55 |
Osaka | Carrier diffusion dynamics in InGaN/GaN SQW studied by spatial and temporal resolved PL spectroscopy
-- Efficiency droop mechanism assessed by SNOM -- Akira Hashiya, Akio Kaneta, Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2010-149 CPM2010-115 LQE2010-105 |
The temporally and spatially resolved photoluminescence (PL) mappings under the various carrier densities have been perf... [more] | ED2010-149 CPM2010-115 LQE2010-105 pp.33-36 |
|
| CPM, LQE, ED | 2010-11-11 15:20 |
Osaka | 100 mW Deep Ultraviolet Emission from AlGaN/AlN Quantum Wells by Electron Beam Pumping Takao Oto, Ryan G. Banal (Kyoto Univ.), Ken Kataoka (Ushio Inc.), Mitsuru Funato, Yoichi Kawakami (Kyoto Univ.) ED2010-150 CPM2010-116 LQE2010-106 |
The external quantum efficiencies of AlGaN-based deep ultraviolet light emitting diodes are less than 5%, due to the cau... [more] | ED2010-150 CPM2010-116 LQE2010-106 pp.37-40 |
|
| LQE | 2010-05-28 16:30 |
Fukui | Sougou Kenkyuu Tou I, Bunkyo Campus, Univ. of Fukui | High-Efficiency Light-emitting and Receiving Devices using Localized and Propagating Surface Plasmon Koichi Okamoto (Kyoto Univ./JST), Richard Bardoux, Yoichi Kawakami (Kyoto Univ.) LQE2010-15 |
We developed a novel method to enhance the light emission efficiencies and rates of InGaN/GaN quantum wells (QWs) and ot... [more] | LQE2010-15 pp.63-68 |
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