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Committee Date Time Place Paper Title / Authors Abstract Paper #
ICD, SDM 2009-07-16
15:25
Tokyo Tokyo Institute of Technology Comprehensive Design Methodology of Dopant Profile to Suppress Gate-LER-induced Threshold Voltage Variability in sub-30 nm NMOSFETs
Hidenobu Fukutome (Fujitsu Microelectronics Limited), Yoko Hori (Fujitsu Quality Lab. Limited), Kimihiko Hosaka, Yoichi Momiyama, Shigeo Satoh, Toshihiro Sugii (Fujitsu Microelectronics Limited) SDM2009-106 ICD2009-22
We have demonstrated for the first time that parallel extension implantation tilted along the gate width direction enabl... [more] SDM2009-106 ICD2009-22
pp.49-52
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