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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 9 of 9  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
OCS, OPE, LQE 2017-10-26
09:45
Kumamoto Josaien, Sakuranobaba Performance evaluation of fiber-coupler-based mode multiplexer for weakly-coupled six-mode multiplexed systems
Koji Igarashi (Osaka Univ.), Yuta Wakayama, Daiki Souma, Takehiro Tsuritani (KDDI Research), Kyung Jun Park, Byoung Yoon Kim (KAIST) OCS2017-36 OPE2017-68 LQE2017-41
(Advance abstract in Japanese is available) [more] OCS2017-36 OPE2017-68 LQE2017-41
pp.1-5
EA, ASJ-H 2017-08-10
14:50
Miyagi Tohoku Univ., R. I. E. C. Comparison of the theoretical model and optical measurement of diaphragm vibration for the laboratory standard microphone
Jae Gap Suh (Tohoku Univ.), Wan-Ho Cho (KRISS), Hack Yoon Kim (Cheongju Univ., Korea), Yoiti Suzuki (Tohoku Univ.) EA2017-42
As a method to measure the sensitivity of a microphone, a reciprocity calibration method using three microphones was pro... [more] EA2017-42
pp.91-96
LQE, OPE, OCS 2016-10-27
14:35
Miyazaki Miyazaki Citizen's Plaza Six-mode multiplexer and demultiplexer using all-fiber-based couplers
Koji Igarashi (KDDI Reseach), Kyung Jun Park (KAIST), Daiki Soma, Yuta Wakayama, Takehiro Tsuritani (KDDI Reseach), Byoung Yoon Kim (KAIST) OCS2016-40 OPE2016-81 LQE2016-56
(Advance abstract in Japanese is available) [more] OCS2016-40 OPE2016-81 LQE2016-56
pp.31-36
SDM, ED
(Workshop)
2012-06-27
14:15
Okinawa Okinawa Seinen-kaikan Control Effect of New Optimized Structure of Planar Thin Floating Gate (FG) NAND Flash to Fringing Field
Do-Bin Kim, Yoon Kim, Se Hwan Park, Wandong Kim, Joo Yun Seo, Seung-Hyun Kim, Byung-Gook Park (Seoul National Univ.)
As cell size of floating gate (FG) type NAND flash memory shrinks, formation of structure which has control gate wrappin... [more]
ED, SDM 2010-06-30
14:25
Tokyo Tokyo Inst. of Tech. Ookayama Campus A New Cone-Type 1T DRAM Cell
Gil Sung Lee, Doo-Hyun Kim, Jang-Gn Yun, Jung Hoon Lee, Yoon Kim, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ED2010-55 SDM2010-56
 [more] ED2010-55 SDM2010-56
pp.23-25
ED, SDM 2010-06-30
15:10
Tokyo Tokyo Inst. of Tech. Ookayama Campus Threshold Voltage Roll-off Mechanisms in SONOS Flash Memory in Retention Mode Including Trapped Charge Redistribution Effect
Doo-Hyun Kim, Gil Sung Lee, Seongjae Cho, Jung Hoon Lee, Jang-Gn Yun, Dong Hua Li, Yoon Kim, Se Hwan Park, Won Bo Shim, Wandong Kim, Byung-Gook Park (Seoul National Univ.) ED2010-58 SDM2010-59
 [more] ED2010-58 SDM2010-59
pp.37-40
ED, SDM 2010-07-02
15:35
Tokyo Tokyo Inst. of Tech. Ookayama Campus Independent Gate Twin-bit SONOS Flash Memory with Split-gate Effect
Yoon Kim, Jang-Gn Yun, Jung Hoon Lee, Gil Sung Lee, Se Hwan Park, Jong-Ho Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ED2010-99 SDM2010-100
 [more] ED2010-99 SDM2010-100
pp.217-220
SDM, ED 2009-06-26
10:00
Overseas Haeundae Grand Hotel, Busan, Korea Multi-level reading method by using PCI(Paierd Cell Interference) in vertical NAND flash memory.
Yoon Kim, Seongjae Cho, Jang-Gn Yun, Il Han Park, Gil Sung Lee, Doo-Hyun Kim, Dong Hua Li, Se Hwan Park, Wandong Kim, Wonbo Shim, Byung-Gook Park (Seoul National Univ.) ED2009-96 SDM2009-91
 [more] ED2009-96 SDM2009-91
pp.197-200
SDM, ED 2008-07-10
09:30
Hokkaido Kaderu2・7 3-dimensional Terraced NAND(3D TNAND) Flash Memory
Yoon Kim, Gil-Seong Lee, Jong Duk Lee, Hyungcheol Shin, Byung-Gook Park (Seoul National Univ.) ED2008-56 SDM2008-75
We propose the 3-dimensional terraced NAND flash memory. It has a vertical channel so it can be possible to make a enoug... [more] ED2008-56 SDM2008-75
pp.85-88
 Results 1 - 9 of 9  /   
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