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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM, EID |
2016-12-12 14:30 |
Nara |
NAIST |
Island shape a-Ge film by FLA crystallization Naoki yoshioka, Akira Heya, Naoto matsuo (Univ.of Hyogo), Yoshiaki Nakamura, Takehiko Yokomori, Masaki Yoshioka (USHIO INC) EID2016-21 SDM2016-102 |
[more] |
EID2016-21 SDM2016-102 pp.55-58 |
EID, SDM |
2015-12-14 13:15 |
Kyoto |
Ryukoku University, Avanti Kyoto Hall |
Lamp-voltage dependence of FLA crystallization for a-Ge film Shota Hirano, Akira Heya, Naoto Matsuo (Univ. of Hyogo), Naoya Kawamoto (Yamaguchi Univ.), Yoshiaki Nakamura, Takehiko Yokomori, Masaki Yoshioka (USHIO) EID2015-14 SDM2015-97 |
[more] |
EID2015-14 SDM2015-97 pp.23-26 |
SDM |
2015-06-19 16:10 |
Aichi |
VBL, Nagoya Univ. |
Improvements of electrical properties of wafer-bonded GeOI substrates with ultrathin Al2O3/SiO2 hybrid BOX layers by post-annealing Keisuke Yoshida, Shotaro Takeuchi, Yoshiaki Nakamura, Akira Sakai (Osaka Univ.) SDM2015-53 |
The electrical properties of wafer-bonded germanium (001)-on-insulator (Ge (001)-OI) substrates with Al2O3/SiO2 hybrid b... [more] |
SDM2015-53 pp.81-86 |
SDM, ED |
2015-02-05 13:30 |
Hokkaido |
Hokkaido Univ. |
[Invited Talk]
Development of Si-based thermoelectric nanomaterial using ultrathin SiO2 film technique Yoshiaki Nakamura (Osaka Univ.) ED2014-138 SDM2014-147 |
The structure of connected nanodots (NDs) epitaxially grown on Si substrates was proposed as thermoelectric nanomaterial... [more] |
ED2014-138 SDM2014-147 pp.1-5 |
SDM |
2013-06-18 13:35 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Epitaxial growth of iron oxide nanodots on Si substrate and their electronic states Takafumi Ishibe, Yoshiaki Nakamura, Hideki Matsui, Shotaro Takeuchi, Akira Sakai (Osaka Univ.) SDM2013-54 |
Iron oxide thin film on Si substrate has been expected as a low-cost and ecological material for resistive random access... [more] |
SDM2013-54 pp.51-55 |
SDM |
2012-06-21 09:20 |
Aichi |
VBL, Nagoya Univ. |
Resistive Switching Properties of Directly Bonded SrTiO3 Substrate Ryota Asada, Pham Phu Thanh Son, Kokate Nishad Vasant, Jun Kikkawa, Shotaro Takeuchi, Yoshiaki Nakamura, Akira Sakai (Osaka Univ.) SDM2012-44 |
As one of new non-volatile memory devices, much attention has been paid to the resistive switching memory which has a me... [more] |
SDM2012-44 pp.7-12 |
HCGSYMPO (2nd) |
2011-12-07 - 2011-12-09 |
Kagawa |
Sun Port Hall Takamatsu |
Image authentication by hand shape recognition
-- Stress comparison among biometric authentications -- Yoshiaki Nakamura, Kazuhiro Notomi (KAIT), Keiichi Saito (International University of Health and Welfare) |
It is Important consideration at biometrics authentication to improve convenience and reduce burden on users. In this ar... [more] |
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SDM |
2011-07-04 16:00 |
Aichi |
VBL, Nagoya Univ. |
Evaluation of Electrical Property at SrTiO3 Bicrystal Interface by EBIC Tetsuji Kato, Son Phu Thanh Pham, Yoshiaki Nakamura, Jun Kikkawa, Akira Sakai (Osaka Univ.) SDM2011-66 |
[more] |
SDM2011-66 pp.93-96 |
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