| IEICE Technical Committee Submission System Conference Schedule |
Online Proceedings [Sign in] Tech. Rep. Archives |
All Technical Committee Conferences (Searched in: All Years)
| Committee | Date Time | Place | Paper Title / Authors | Abstract | Paper # | |
| LQE, OPE, EMD, R, CPM | 2016-08-26 14:35 |
Hokkaido | Equalizer-free 100-Gbit/s/λ signal transmission using flip-chip interconnection EADFB laser module Shigeru Kanazawa, Satoshi Tsunashima, Yasuhiko Nakanishi, Yoshifumi Muramoto, Hiroshi Yamazaki, Yuta Ueda, Wataru Kobayashi, Hiroyuki Ishii, Hiromasa Tanobe, Hiroaki Sanjoh (NTT) |
[more] | ||
| EMD, LQE, OPE, CPM, R | 2014-08-22 11:30 |
Hokkaido | Otaru Economy Center | High-speed avalanche photodiodes with vertical illumination structure for reliability and stability Masahiro Nada, Haruki Yokoyama, Yoshifumi Muramoto, Hideaki Matsuzaki (NTT)  R2014-41 EMD2014-46 CPM2014-61 OPE2014-71 LQE2014-45 |
[more] | R2014-41 EMD2014-46 CPM2014-61 OPE2014-71 LQE2014-45 pp.91-94 |
| LQE, OCS, OPE | 2013-10-25 11:15 |
Fukuoka | High-performance InAlAs avalanche photodiode for 25-Gbit/s applications Masahiro Nada, Yoshifumi Muramoto, Haruki Yokoyama, Tadao Ishibashi, Hideaki Matsuzaki (NTT) OCS2013-69 OPE2013-115 LQE2013-85 |
[more] | OCS2013-69 OPE2013-115 LQE2013-85 pp.99-102 |
|
| ED | 2012-12-18 12:05 |
Miyagi | Tohoku University | Sub-Millimeter-Wave InP-Based Schottky-Barrier Diode Module for Zero-Biased Operation Hiroshi Ito (Kitasato Univ.), Yoshifumi Muramoto (NTT), Hiroshi Yamamoto (Kitasato Univ.), Tadao Ishibashi (NEL) ED2012-107 |
An InP/InGaAsP Schottky barrier diode (SBD) for zero-biased operation in the sub-millimeter-wave range has been develope... [more] | ED2012-107 pp.77-82 |
| EMT, PN, LQE, OPE, MWP, EST, IEE-EMT [detail] | 2012-01-27 14:40 |
Osaka | Osaka Univ. Convention Center | Heterogeneous-integrated optoelectronic receiver on a silica-based PLC platform Yu Kurata, Yusuke Nasu, Munehisa Tamura, Yoshifumi Muramoto, Haruki Yokoyama (NTT) PN2011-75 OPE2011-191 LQE2011-177 EST2011-125 MWP2011-93 |
We proposed the heterogeneous integration of high-speed InP PDs on a silica-based PLC platform. A high-speed photo-detec... [more] | PN2011-75 OPE2011-191 LQE2011-177 EST2011-125 MWP2011-93 pp.299-304 |
| OPE, EMT, LQE, PN, IEE-EMT [detail] | 2011-01-28 10:50 |
Osaka | Osaka Univ. | High-gain operation of avalanche photodiodes with InP/InGaAs new structures Masahiro Nada, Yoshifumi Muramoto, Haruki Yokoyama, Naoteru Shigekawa, Satoshi Kodama (NTT) PN2010-44 OPE2010-157 LQE2010-142 |
Due to higher voltage operation than that of conventional photodiodes (PDs), electrical field need to be confined inside... [more] | PN2010-44 OPE2010-157 LQE2010-142 pp.103-106 |
| OPE, LQE | 2010-06-25 14:55 |
Tokyo | Kikai-Shinko-Kaikan Bldg. | Composite Field MIC-PD for Low Bias and High Input Power Operation Toshihide Yoshimatsu, Yoshifumi Muramoto, Satoshi Kodama, Naoteru Shigekawa, Haruki Yokoyama (NTT Corp.), Tadao Ishibashi (NTT Electronics Corp.) OPE2010-16 LQE2010-18 |
Maximized Induced Current Photodiode (MIC-PD) has an optimized structure between a responsivity and a bandwidth by minim... [more] | OPE2010-16 LQE2010-18 pp.7-10 |
| LQE, OPE, OCS | 2007-11-01 11:15 |
Fukuoka | High-speed, high-efficient photodiode with p-InGaAs/i-InGaAs absorption layers Yoshifumi Muramoto, Toshihide Yoshimatsu, Satoshi Kodama, Fumito Nakajima, Tomofumi Furuta, Hiroshi Ito (NTT) OCS2007-44 OPE2007-99 LQE2007-85 |
We proposed a new design principle for a photodiode structure that has a depleted InGaAs absorption layer combined with ... [more] | OCS2007-44 OPE2007-99 LQE2007-85 pp.23-27 |
|
[Return to Top Page]