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 Results 1 - 8 of 8  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
LQE, OPE, EMD, R, CPM 2016-08-26
Hokkaido   Equalizer-free 100-Gbit/s/λ signal transmission using flip-chip interconnection EADFB laser module
Shigeru Kanazawa, Satoshi Tsunashima, Yasuhiko Nakanishi, Yoshifumi Muramoto, Hiroshi Yamazaki, Yuta Ueda, Wataru Kobayashi, Hiroyuki Ishii, Hiromasa Tanobe, Hiroaki Sanjoh (NTT)
EMD, LQE, OPE, CPM, R 2014-08-22
Hokkaido Otaru Economy Center High-speed avalanche photodiodes with vertical illumination structure for reliability and stability
Masahiro Nada, Haruki Yokoyama, Yoshifumi Muramoto, Hideaki Matsuzaki (NTT) R2014-41 EMD2014-46 CPM2014-61 OPE2014-71 LQE2014-45
 [more] R2014-41 EMD2014-46 CPM2014-61 OPE2014-71 LQE2014-45
LQE, OCS, OPE 2013-10-25
Fukuoka   High-performance InAlAs avalanche photodiode for 25-Gbit/s applications
Masahiro Nada, Yoshifumi Muramoto, Haruki Yokoyama, Tadao Ishibashi, Hideaki Matsuzaki (NTT) OCS2013-69 OPE2013-115 LQE2013-85
 [more] OCS2013-69 OPE2013-115 LQE2013-85
ED 2012-12-18
Miyagi Tohoku University Sub-Millimeter-Wave InP-Based Schottky-Barrier Diode Module for Zero-Biased Operation
Hiroshi Ito (Kitasato Univ.), Yoshifumi Muramoto (NTT), Hiroshi Yamamoto (Kitasato Univ.), Tadao Ishibashi (NEL) ED2012-107
An InP/InGaAsP Schottky barrier diode (SBD) for zero-biased operation in the sub-millimeter-wave range has been develope... [more] ED2012-107
EMT, PN, LQE, OPE, MWP, EST, IEE-EMT [detail] 2012-01-27
Osaka Osaka Univ. Convention Center Heterogeneous-integrated optoelectronic receiver on a silica-based PLC platform
Yu Kurata, Yusuke Nasu, Munehisa Tamura, Yoshifumi Muramoto, Haruki Yokoyama (NTT) PN2011-75 OPE2011-191 LQE2011-177 EST2011-125 MWP2011-93
We proposed the heterogeneous integration of high-speed InP PDs on a silica-based PLC platform. A high-speed photo-detec... [more] PN2011-75 OPE2011-191 LQE2011-177 EST2011-125 MWP2011-93
OPE, EMT, LQE, PN, IEE-EMT [detail] 2011-01-28
Osaka Osaka Univ. High-gain operation of avalanche photodiodes with InP/InGaAs new structures
Masahiro Nada, Yoshifumi Muramoto, Haruki Yokoyama, Naoteru Shigekawa, Satoshi Kodama (NTT) PN2010-44 OPE2010-157 LQE2010-142
Due to higher voltage operation than that of conventional photodiodes (PDs), electrical field need to be confined inside... [more] PN2010-44 OPE2010-157 LQE2010-142
OPE, LQE 2010-06-25
Tokyo Kikai-Shinko-Kaikan Bldg. Composite Field MIC-PD for Low Bias and High Input Power Operation
Toshihide Yoshimatsu, Yoshifumi Muramoto, Satoshi Kodama, Naoteru Shigekawa, Haruki Yokoyama (NTT Corp.), Tadao Ishibashi (NTT Electronics Corp.) OPE2010-16 LQE2010-18
Maximized Induced Current Photodiode (MIC-PD) has an optimized structure between a responsivity and a bandwidth by minim... [more] OPE2010-16 LQE2010-18
LQE, OPE, OCS 2007-11-01
Fukuoka   High-speed, high-efficient photodiode with p-InGaAs/i-InGaAs absorption layers
Yoshifumi Muramoto, Toshihide Yoshimatsu, Satoshi Kodama, Fumito Nakajima, Tomofumi Furuta, Hiroshi Ito (NTT) OCS2007-44 OPE2007-99 LQE2007-85
We proposed a new design principle for a photodiode structure that has a depleted InGaAs absorption layer combined with ... [more] OCS2007-44 OPE2007-99 LQE2007-85
 Results 1 - 8 of 8  /   
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