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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2014-01-29
10:25		 Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] High Electron Mobility Triangular InGaAs-OI nMOSFETs with (111)B Side Surfaces Formed by MOVPE Regrowth
Toshifumi Irisawa, Minoru Oda, Keiji Ikeda, Yoshihiko Moriyama, Eiko Mieda, Wipakorn. Jevasuwan, Tatsuro Maeda (AIST), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Yasuyuki Miyamoto (Tokyo Inst. of Tech.), Tsutomu Tezuka (AIST) SDM2013-137		 riangular In0.53Ga0.47As-OI nMOSFETs with smooth (111)B side surfaces on Si have been successfully fabricated. The trian... [more] SDM2013-137
pp.9-12
NS, PN
(Joint)		 2007-12-20
15:50		 Chiba Chiba Univ. Dynamic Leaky Bucket Deflection Method for Optical Burst Switching Networks
Kentaro Miyoko, Yoshihiko Mori, Yugo Ikeda (Kansai Univ), Young Bok Choi (Tongmyong Univ), Hiromi Okada (Kansai Univ) NS2007-108		 Recently, due to the great popularization of the Internet, the traffic has increased exponentially. So that Optical Burs... [more] NS2007-108
pp.13-18
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