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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
SDM |
2014-01-29 10:25 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
[Invited Talk]
High Electron Mobility Triangular InGaAs-OI nMOSFETs with (111)B Side Surfaces Formed by MOVPE Regrowth Toshifumi Irisawa, Minoru Oda, Keiji Ikeda, Yoshihiko Moriyama, Eiko Mieda, Wipakorn. Jevasuwan, Tatsuro Maeda (AIST), Osamu Ichikawa, Takenori Osada, Masahiko Hata (Sumitomo Chemical), Yasuyuki Miyamoto (Tokyo Inst. of Tech.), Tsutomu Tezuka (AIST) SDM2013-137 |
riangular In0.53Ga0.47As-OI nMOSFETs with smooth (111)B side surfaces on Si have been successfully fabricated. The trian... [more] |
SDM2013-137 pp.9-12 |
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