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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 11 of 11  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
ET 2023-09-08
09:40
Osaka Osaka Metropolitan University / Online
(Primary: On-site, Secondary: Online)
Survey on learning-state-estimation methods using learning trace data
Yoshihiro Hayashi, Kimihiko Miyazaki, Masashi Kudo, Yamana Hayato (Waseda Univ.) ET2023-13
In recent years, the use of online learning platforms and learning applications has increased rapidly due to the spread ... [more] ET2023-13
pp.1-8
SDM, ICD 2015-08-25
09:30
Kumamoto Kumamoto City [Invited Talk] Low-Power Embedded ReRAM Technology for IoT Applications
Makoto Ueki, Akira Tanabe, Hiroshi Sunamura, Mitsuru Narihiro, Kazuya Uejima, Koji Masuzaki, Naoya Furutake, Akira Mitsuiki, Koichi Takeda, Takashi Hase, Yoshihiro Hayashi (Renesas Electronics) SDM2015-65 ICD2015-34
A low-power 2Mb ReRAM macro was developed in 90 nm CMOS platform, demonstrating lower power data-writing (x1/7-x1/10) an... [more] SDM2015-65 ICD2015-34
pp.41-46
ICD, SDM 2014-08-05
13:05
Hokkaido Hokkaido Univ., Multimedia Education Bldg. [Invited Talk] Oxide Semiconductor-based Transistors Formed in LSI Interconnects
Hiroshi Sunamura, Naoya Furutake, Shinobu Saito, Mitsuru Narihiro, Yoshihiro Hayashi (REL) SDM2014-76 ICD2014-45
We report on the latest progress on our proposed new transistor technology called BEOL-FET, in which we form oxide-based... [more] SDM2014-76 ICD2014-45
pp.77-82
SDM 2012-03-05
11:20
Tokyo Kikai-Shinko-Kaikan Bldg. Highly Reliable BEOL-Transistor with oxygen-controlled InGaZnO channel and Gate/Drain Offset design
Kishou Kaneko, Naoya Inoue, Shinobu Saito, Naoya Furutake, Hiroshi Sunamura, Jun Kawahara, Masami Hane, Yoshihiro Hayashi (Renesas Electronics) SDM2011-178
Reliability of BEOL-transistors with a wide-gap oxide semiconductor InGaZnO film for high-voltage interface, integrated ... [more] SDM2011-178
pp.13-17
ICD 2011-04-19
10:20
Hyogo Kobe University Takigawa Memorial Hall Multi-step Word-line Control Technology in Hierarchical Cell Architecture for Scaled-down High-density SRAMs
Koichi Takeda, Toshio Saito, Shinobu Asayama, Yoshiharu Aimoto, Hiroyuki Kobatake, Shinya Ito, Toshifumi Takahashi, Kiyoshi Takeuchi, Masahiro Nomura, Yoshihiro Hayashi (Renesas Electronics) ICD2011-10
 [more] ICD2011-10
pp.55-58
SDM 2011-02-07
10:50
Tokyo Kikai-Shinko-Kaikan Bldg. Path-finding for Integration of Robust Low-k (k-2.5) SiOCH in System LSI
Naoya Inoue, Makoto Ueki, Hironori Yamamoto, Ippei Kume, Jun Kawahara, Manabu Iguchi, Hirokazu Honda, Yoshitaka Horikoshi, Yoshihiro Hayashi (Renesas Electronics Corp.) SDM2010-217
Impacts of k-value reduction on LSI performances are clarified quantitatively using 2M-gate net-list. Reduction in k-val... [more] SDM2010-217
pp.7-12
PRMU, MVE, IPSJ-CVIM [detail] 2011-01-21
17:10
Shiga   Robust to Object Detection for Pose Estimation in Real Environments
Yuya Sasaki, Yoshihiro Hayashi, Yoshihiro Okada (Ryukoku Univ.) PRMU2010-204 MVE2010-129
In this paper, we propose a new object detection method for pose estimation of real object in the camera image. The shap... [more] PRMU2010-204 MVE2010-129
pp.411-416
SDM 2010-02-05
10:50
Tokyo Kikai-Shinko-Kaikan Bldg. Highly-Reliable Cu Interconnect covered with CoWB Metal-cap in a Waterproof Molecular-Pore-Stack (MPS)-SiOCH film
Yoshihiro Hayashi, Masayoshi Tagami, Naoya Furutake, Naoya Inoue, Emiko Nakazawa, Kouji Arita (NEC Electronics) SDM2009-183
A new low-power copper (Cu) interconnect structure is developed with selective-metal (CoWB) cap, which selectively cover... [more] SDM2009-183
pp.7-11
PRMU, SP, MVE, CQ 2010-01-21
15:20
Kyoto Kyoto Univ. Object Detection for Pose Estimation Considering Occlusion Problem and Motion
Yuya Sasaki, Yoshihiro Hayashi, Gou Fujisawa, Yoshihiro Okada (Ryukoku Univ.) CQ2009-79 PRMU2009-178 SP2009-119 MVE2009-101
In this paper, we propose a new object detection method for pose estimation of physical object in the camera image. The ... [more] CQ2009-79 PRMU2009-178 SP2009-119 MVE2009-101
pp.155-160
MW 2009-09-25
13:50
Tokyo Univ. of Electro-Communications A Low-Power, Small Area Quadrature LC-VCO using miniature 3D Solenoid shaped Inductor
Akira Tanabe, Ken'ichiro Hijioka, Hirokazu Nagase, Yoshihiro Hayashi (NEC Electronics Corp.) MW2009-83
An extra small area, low-power 5GHz Quadrature LC-VCO and PLL have been fabricated using 3 dimensional (3D) solenoid sha... [more] MW2009-83
pp.55-60
ICD 2008-12-12
13:20
Tokyo Tokyo Inst. Tech., Ohokayama Campus, Kokusa-Kouryu-Kaikan Fast Voltage Control Scheme with Adaptive Voltage Control Steps and Temporary Reference Voltage Overshoots for Dynamic Voltage and Frequency Scaling
Yoshifumi Ikenaga, Masahiro Nomura (NEC Electronics), Yoetsu Nakazawa (NEC Corporation), Yoshihiro Hayashi (NEC Electronics) ICD2008-121
 [more] ICD2008-121
pp.95-100
 Results 1 - 11 of 11  /   
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