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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
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Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2021-01-28
Online Online [Invited Talk] Evaluation of Defects in Si Substrates Introduced by Stochastic Lateral Straggling during Plasma Exposure and Its Impact on Ultra-low Leakage Devices
Yoshihiro Sato, Takayoshi Yamada, Kazuko Nishimura, Masayuki Yamasaki, Masashi Murakami (Panasonic), Keiichiro Urabe, Koji Eriguchi (Kyoto Univ.) SDM2020-53
In the design of ultra-low leakage devices such as image sensors, it is critical to understand the distribution of an ex... [more] SDM2020-53
ITS, IE, ITE-AIT, ITE-HI, ITE-ME [detail] 2013-02-19
Hokkaido Hokkaido Univ. 3D Modeling of Long Tunnel in a Highway and its Evaluation -- Dense Measurement and Absolute Localization --
Shintaro Ono, Liang Xue, Atsuhiko Banno, Takeshi Oishi, Yoshihiro Sato, Katsushi Ikeuchi (Univ. of Tokyo) ITS2012-51 IE2012-131
Precise and accurate 3D model of a road structure is basic information that can be utilized for various purposes, such a... [more] ITS2012-51 IE2012-131
ED, LQE, CPM 2009-11-20
Tokushima Univ. of Tokushima (Josanjima Campus, Kogyo-Kaikan) Large Current operation of GaN MOSFETs
Takehiko Nomura, Hiroshi Kambayashi, Yoshihiro Satoh, Yuki Niiyama, Sadahiro Kato (Advanced Power Device Research Association) ED2009-156 CPM2009-130 LQE2009-135
A large current operation of GaN-based MOSFET on Si substrate is reported. To realize both low on-resistance and high br... [more] ED2009-156 CPM2009-130 LQE2009-135
ED 2008-10-23
Fukuoka Kyushu Institute of Technology High-power AlGaN/GaN HFETs on 4-inch Si substrates
Nariaki Ikeda, Syuusuke Kaya, Jiang Li, Takuya Kokawa, Yoshihiro Sato, Sadahiro Kato (Furukawa Electric) ED2008-148
 [more] ED2008-148
SDM 2007-03-15
Tokyo Kikai-Shinko-Kaikan Bldg. Reset switching mechanism of ReRAM using thermal reaction model
Yoshihiro Sato, Kentaro Kinoshita, Hideyuki Noshiro, Masaki Aoki, Yoshihiro Sugiyama (FUJITSU LAB.)
We investigated the resistive memory (ReRAM) cells with binary metal oxide (BMO) junctions by applying a short voltage p... [more] SDM2006-255
ICD, SDM 2005-08-19
Hokkaido HAKODATE KOKUSAI HOTEL A Novel Voltage Sensing 1T/2MTJ Cell with Resistance Ratio for Highly Stable and Scalable MRAM
Masaki Aoki, Hiroshi Iwasa, Yoshihiro Sato (Fujitsu Lab)
We propose a new scalable MRAM cell that consists of one transistor (1T) and two magnetic tunnel junctions (2MTJ), and c... [more] SDM2005-150 ICD2005-89
 Results 1 - 6 of 6  /   
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