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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 18 of 18  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
EMD 2020-03-06
16:50
Chiba CHIBA Institute of Technology Tsudanuma Campus
(Cancelled but technical report was issued)
Influence of Ambient Gas on Breaking Arc Discharge of Electromagnetic contactor -- Effect of Gas Pressure and Current --
Sota Nagase, Yoshiki Yamamoto, Koichiro Sawa, Kiyoshi Yoshida (NIT) EMD2019-72
The electromagnetic contactor was opened and closed in air or in hydrogen. The arc duration ta, arc energy Ea, arc exti... [more] EMD2019-72
pp.65-70
EMD 2020-01-17
14:55
Kanagawa Rental hall Shonan Hiratsuka Influence of Ambient Gas and Pressure on Break Arc Characteristics in Alternating Current
Yoshiki Yamamoto, Sota Nagase, Kiyoshi Yoshida, Koichiro Sawa (NIT), Kenji Suzuki (Fuji Electric FA Components & System) EMD2019-50
Arc discharge at break was generated in the electromagnetic contactor in the air and hydrogen. The arc duration ta, the ... [more] EMD2019-50
pp.11-16
ICD 2018-04-20
10:20
Tokyo   [Invited Lecture] An Implementation of 2RW Dual-Port SRAM using 65 nm Silicon-on-Thin-Box (SOTB) for Smart IoT
Yohei Sawada, Yoshiki Yamamoto, Takumi Hasegawa, Hiroki Shinkawata, Makoto Yabuuchi (REL), Yoshihiro Shinozaki, Kyoji Ito (NSW), Shinji Tanaka, Nii Koji, Shiro Kamohara (REL) ICD2018-8
 [more] ICD2018-8
pp.29-32
SDM, ICD, ITE-IST [detail] 2017-07-31
10:40
Hokkaido Hokkaido-Univ. Multimedia Education Bldg. A 65 nm 1.0V 1.84ns Silicon-on-Thin-Box (SOTB) Embedded SRAM with 13.72 nW/Mbit Standby Power for Smart IoT
Makoto Yabuuchi, Koji Nii, Shinji Tanaka (Renesas), Shinozaki Yoshihiro (Nippon Systemware), Yoshiki Yamamoto, Takumi Hasegawa, Hiroki Shinkawata, Shiro Kamohara (Renesas) SDM2017-33 ICD2017-21
 [more] SDM2017-33 ICD2017-21
pp.13-16
SDM 2016-10-26
15:30
Miyagi Niche, Tohoku Univ. [Invited Talk] Back-Bias Control Technique for Suppression of Die-to-Die Delay Variability of SOTB CMOS Circuits at Ultralow-Voltage (0.4 V) Operation
Hideki Makiyama, Yoshiki Yamamoto, Takumi Hasegawa, Shinobu Okanishi, Keiichi Maekawa, Hiroki Shinkawata, Shiro Kamohara, Yasuo Yamaguchi (Renesas Electronics Corp.), Nobuyuki Sugii (Hitach), Koichiro Ishibashi (The Univ. of Electro-Communications), Tomoko Mizutani, Toshiro Hiramoto (The Univ. of Tokyo) SDM2016-71
Small-variability transistors such as silicon on thin buried oxide (SOTB) are effective for reducing the operation volta... [more] SDM2016-71
pp.15-20
SDM 2016-10-26
16:10
Miyagi Niche, Tohoku Univ. [Invited Talk] Ultralow-Voltage Operation of Silicon-on-Thin-BOX (SOTB) 2Mbit SRAM Down to 0.37 V Utilizing Adaptive Back Bias
Yoshiki Yamamoto, Hideki Makiyama, Takumi Hasegawa, Shinobu Okanishi, Keiichi Maekawa, Shinkawata Hiroki, Shiro Kamohara, Yasuo Yamaguchi (Renesas), Nobuyuki Sugii (Hitachi), Tomoko Mizutani, Toshiro Hiramoro (UT) SDM2016-72
We demonstrated record 0.37V minimum operation voltage (VMIN) of 2Mb Silicon-on-Thin-Buried-oxide (SOTB) 6T-SRAM. Thanks... [more] SDM2016-72
pp.21-25
SDM, ICD 2015-08-25
10:55
Kumamoto Kumamoto City [Invited Talk] Novel Single p+Poly-Si/Hf/SiON Gate Stack Technology on Silicon-on-Thin-Buried-Oxide (SOTB) for Ultra-Low Leakage Applications
Yoshiki Yamamoto, Hideki Makiyama, Tomohiro Yamashita, Hidekazu Oda, Shiro Kamohara, Yasuo Yamaguchi (Renesas Electronics Corp.), Nobuyuki Sugii (Hitachi), Tomoko Mizutani, Masaharu Kobayashi, Toshiro Hiramoto (UT) SDM2015-67 ICD2015-36
We demonstrate a cost effective 65-nm SOTB CMOS technology for ultra-low leakage applications. Novel single p+poly-Si/Hf... [more] SDM2015-67 ICD2015-36
pp.53-57
SDM 2014-10-17
14:30
Miyagi Niche, Tohoku Univ. [Invited Talk] Back-Bias Control technique for Suppression of Die-to-Die Delay Variability of SOTB MOS Circuits at Ultralow-Voltage (0.4 V) Operation
Hideki Makiyama, Yoshiki Yamamoto, Hidekazu Oda, Shiro Kamohara, Nobuyuki Sugii, Yasuo Yamaguchi (LEAP), Koichiro Ishibashi (Univ. of Electro-Communications), Tomoko Mizutani, Toshiro Hiramoto (Univ. of Tokyo) SDM2014-94
Small-variability transistors such as silicon on thin buried oxide (SOTB) are effective for reducing the operation volta... [more] SDM2014-94
pp.61-68
ICD, SDM 2014-08-04
09:00
Hokkaido Hokkaido Univ., Multimedia Education Bldg. [Invited Talk] A Perpetuum Mobile 32bit CPU with 13.4pJ/cycle, 0.14μA Sleep Current using Reverse-Body-Bias Assisted 65nm SOTB CMOS Technology
Koichiro Ishibashi (UEC), Nobuyuki Sugii (LEAP), Kimiyoshi Usami (SIT), Hideharu Amano (KU), Kazutoshi Kobayashi (KIT), Cong-Kha Pham (UEC), Hideki Makiyama, Yoshiki Yamamoto, Hirofumi Shinohara, Toshiaki Iwamatsu, Yasuo Yamaguchi, Hidekazu Oda, Takumi Hasegawa, Shinobu Okanishi, Hiroshi Yanagita (LEAP) SDM2014-62 ICD2014-31
 [more] SDM2014-62 ICD2014-31
pp.1-4
ICD, SDM 2014-08-05
09:50
Hokkaido Hokkaido Univ., Multimedia Education Bldg. Statistical Analysis of Minimum Operation Voltage (Vmin) in Fully Depleted Silicon-on-Thin-BOX (SOTB) SRAM Cells
Tomoko Mizutani (Univ. of Tokyo), Yoshiki Yamamoto, Hideki Makiyama, Tomohiro Yamashita, Hidekazu Oda, Shiro Kamohara, Nobuyuki Sugii (LEAP), Toshiro Hiramoto (Univ. of Tokyo) SDM2014-72 ICD2014-41
The minimum operation voltage (Vmin) of fully depleted (FD) silicon-on-thin-BOX (SOTB) SRAM cells are measured and stati... [more] SDM2014-72 ICD2014-41
pp.55-58
ICD 2014-04-18
09:55
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Lecture] Ultralow-Voltage Operation of Silicon-on-Thin-BOX (SOTB) 2Mbit SRAM Down to 0.37 V Utilizing Adaptive Back Bias
Yoshiki Yamamoto, Hideki Makiyama, Tomohiro Yamashita, Hidekazu Oda, Shiro Kamohara, Nobuyuki Sugii, Yasuo Yamaguchi (LEAP), Tomoko Mizutani, Toshiro Hiramoto (UTokyo) ICD2014-11
We demonstrated record 0.37V minimum operation voltage (VMIN) of 2Mb Silicon-on-Thin-Buried-oxide (SOTB) 6T-SRAM. Thanks... [more] ICD2014-11
pp.53-57
SDM 2014-01-29
14:40
Tokyo Kikai-Shinko-Kaikan Bldg. [Invited Talk] Suppression of Die-to-Die Delay Variability of Silicon on Thin Buried Oxide (SOTB) CMOS Circuits by Balanced P/N Drivability Control with Back-Bias for Ultralow-Voltage (0.4 V) Operation
Hideki Makiyama, Yoshiki Yamamoto, Hirofumi Shinohara, Toshiaki Iwamatsu, Hidekazu Oda, Nobuyuki Sugii (LEAP), Koichiro Ishibashi (Univ. of Electro- Comm.), Tomoko Mizutani, Toshiro Hiramoto (Univ. of Tokyo), Yasuo Yamaguchi (LEAP) SDM2013-143
Small-variability transistors such as silicon on thin buried oxide (SOTB) are effective for reducing the operation volta... [more] SDM2013-143
pp.35-38
SDM, ICD 2013-08-02
09:25
Ishikawa Kanazawa University Reduced Cell Current Variability in Fully Depleted Silicon-on-Thin-BOX (SOTB) SRAM Cells at Supply Voltage of 0.4V
Tomoko Mizutani (Univ. of Tokyo), Yoshiki Yamamoto, Hideki Makiyama, Hirofumi Shinohara, Toshiaki Iwamatsu, Hidekazu Oda, Nobuyuki Sugii (LEAP), Toshiro Hiramoto (Univ. of Tokyo) SDM2013-75 ICD2013-57
Cell current (ICELL) variability in 6T-SRAM composed of silicon-on-thin-BOX (SOTB) MOSFETs by 65nm technology is measure... [more] SDM2013-75 ICD2013-57
pp.47-52
ICD, SDM 2012-08-02
13:00
Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido [Invited Lecture] Silicon on Thin Buried Oxide (SOTB) Technology for Ultralow-Power (ULP) Applications
Nobuyuki Sugii, Toshiaki Iwamatsu, Yoshiki Yamamoto, Hideki Makiyama, Takaaki Tsunomura, Hirofumi Shinohara, Hideki Aono, Hidekazu Oda, Shiro Kamohara, Yasuo Yamaguchi (LEAP/Renesas), Tomoko Mizutani, Toshiro Hiramoto (IIS, The University of Tokyo) SDM2012-68 ICD2012-36
Needs for low-power CMOS devices are still increasing. Ultralow-voltage-operation (ULV) CMOS with maximum power efficien... [more] SDM2012-68 ICD2012-36
pp.29-32
ICD, SDM 2012-08-02
13:25
Hokkaido Sapporo Center for Gender Equality, Sapporo, Hokkaido Reduced Drain Current Variability in Fully Depleted Silicon-on-Thin-BOX (SOTB) MOSFETs
Tomoko Mizutani (Univ. of Tokyo), Yoshiki Yamamoto, Hideki Makiyama, Takaaki Tsunomura, Toshiaki Iwamatsu, Hidekazu Oda, Nobuyuki Sugii (LEAP), Toshiro Hiramoto (Univ. of Tokyo) SDM2012-69 ICD2012-37
Drain current variability in silicon-on-thin-BOX (SOTB) MOSFETs by 65nm technology is analyzed and compared with convent... [more] SDM2012-69 ICD2012-37
pp.33-36
SDM, ED
(Workshop)
2012-06-29
09:45
Okinawa Okinawa Seinen-kaikan [Invited Talk] Silicon on Thin Buried Oxide (SOTB) Technology for Ultralow-Power (ULP) Applications
Nobuyuki Sugii, Toshiaki Iwamatsu, Yoshiki Yamamoto, Hideki Makiyama, Takaaki Tsunomura, Hirofumi Shinohara, Hideki Aono, Hidekazu Oda, Shiro Kamohara, Yasuo Yamaguchi (LEAP/Renesas), Tomoko Mizutani, Toshiro Hiramoto (IIS, Univ. of Tokyo)
Needs for low-power CMOS devices are still increasing. Ultralow-voltage-operation CMOS with maximum power efficiency can... [more]
MW 2008-11-20
11:05
Nagasaki Nagasaki-Univ. A Contiguous Channel Multiplexer using Singly Terminated Filters without Matching Circuits -- An Application to Combiners in Digital Terrestrial Broadcasting Relay Stations --
Toshihiro Nomoto, Yoshiki Yamamoto, Makoto Taguchi (Japan Broadcasting Corporation) MW2008-121
A contiguous band multiplexer which consists of singly terminated filters always require matching circuits (or annulling... [more] MW2008-121
pp.19-24
EMT, OPE, MW 2007-08-03
09:00
Hokkaido Muroran Institute of Technology Passband Insertion Loss of a Filter Consisting of Resonators with Different Unloaded Q
Toshihiro Nomoto, Yoshiki Yamamoto, Masayoshi Nakano (NHK), Takashi Nagamatsu, Miki Negishi (NDK) MW2007-67 OPE2007-54
The spectrum of an OFDM signal is almost flat in the in-band and so it is desired that the insertion-loss variation of a... [more] MW2007-67 OPE2007-54
pp.143-146
 Results 1 - 18 of 18  /   
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