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All Technical Committee Conferences (Searched in: All Years)
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Search Results: Conference Papers |
Conference Papers (Available on Advance Programs) (Sort by: Date Descending) |
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Committee |
Date Time |
Place |
Paper Title / Authors |
Abstract |
Paper # |
ED |
2016-01-20 15:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
Analysis of Millimeter Wave Oscillation in GaN HEMT Unit Cell Shinsuke Watanabe, Shouhei Imai, Eigo Kuwata, Hidetoshi Koyama, Yoshitaka Kamo, Yoshitsugu Yamamoto (Mitsubishi Electric) ED2015-119 |
A millimeter wave oscillation was observed in GaN HEMT unit cell. To prevent this oscillation, we performed electromagne... [more] |
ED2015-119 pp.43-48 |
MW, ED |
2011-01-14 14:30 |
Tokyo |
Kikai-Shinko-Kaikan Bldg. |
A low 1/f Noise and High Reliability InP/GaAsSb DHBT for 76 GHz Automotive Radars Ko Kanaya, Hirotaka Amasuga, Shinsuke Watanabe, Yoshitsugu Yamamoto, Naoki Kosaka, Shinichi Miyakuni, Seiki Goto, Akihiro Shima (Mitsubishi Electric) ED2010-190 MW2010-150 |
This paper presents a low 1/f noise and high reliability InP/GaAsSb DHBT developed for automotive radars. To improve 1/... [more] |
ED2010-190 MW2010-150 pp.81-86 |
NLP |
2009-11-11 09:40 |
Kagoshima |
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Experimentally faithful model for synchronous flashing of Southeast Asia fireflies Yoshitsugu Yamamoto, Kiyotake Tetsuka, Hisa-Aki Tanaka (Univ. of Electro-Comm.) NLP2009-82 |
In this study, we present an experimentally faithful model for synchronous flashing of Southeast Asia fireflies.
This m... [more] |
NLP2009-82 pp.7-11 |
ED |
2007-06-15 13:25 |
Toyama |
Toyama Univ. |
A High Power and High Breakdown Voltage Millimeter-Wave GaAs pHEMT with Low Nonlinear Drain Resistance Hirotaka Amasuga, Akira Inoue, Seiki Goto, Tetsuo Kunii, Yoshitsugu Yamamoto, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric) ED2007-32 |
A new GaAs pHEMT structure, which has achieved both high power density and high breakdown voltage for millimeter-wave am... [more] |
ED2007-32 pp.7-11 |
MW, ED |
2005-11-17 14:00 |
Saga |
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A High Humidity Resistance and High Power Density TaN/Au T-gate pHEMT for Ka-band Applications Hirotaka Amasuga, Seiki Goto, Toshihiko Shiga, Masahiro Totsuka, Hajime Sasaki, Tetsuo Kunii, Yoshitsugu Yamamoto, Akira Inoue, Tomoki Oku, Takahide Ishikawa (Mitsubishi Electric Corp.) |
A 0.8 W/mm high power pHEMT with high resistance to humidity is reported. By using tantalum nitride as the refractory ga... [more] |
ED2005-166 MW2005-121 pp.45-49 |
MW, ED |
2005-01-18 11:10 |
Tokyo |
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- Tetsuo Kunii, Masahiro Totsuka, Yoshitaka Kamo, Yoshitsugu Yamamoto, -, -, Toshihiko Shiga, -, -, -, -, Akira Inoue, Tomoki Oku, Takuma Nanjo, Toshiyuki Oishi (Mitsubishi Electric) |
[more] |
ED2004-216 MW2004-223 pp.25-30 |
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