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Committee Date Time Place Paper Title / Authors Abstract Paper #
EID, ITE-IDY, IEIJ-SSL, SID-JC, IEE-EDD [detail] 2018-01-25
13:40
Shizuoka Shizuoka Univ., Hamamatsu Luminescence characteristics of GaN films grown by chemical vapor deposition using Ga vapor
Yuichiro Masuda, Tsuyoshi Nagase, Wataru Kunieda, Tetsuya Kouno, Hiroko Kominami, Kazuhiko Hara (Shizuoka Univ.) EID2017-31
We have grown gallium nitride (GaN) thin films on c-plane sapphire substrate by chemical vapor deposition (CVD) using Ga... [more] EID2017-31
pp.5-8
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