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 Conference Papers (Available on Advance Programs)  (Sort by: Date Descending)
 Results 1 - 8 of 8  /   
Committee Date Time Place Paper Title / Authors Abstract Paper #
SDM 2013-10-17
16:10		 Miyagi Niche, Tohoku Univ. A device structure design of multi-gate MOSFETs based on carrier mobility characteristics of atomically flattened Si surface
Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2013-91		  [more] SDM2013-91
pp.15-20
SDM 2013-10-18
09:30		 Miyagi Niche, Tohoku Univ. Si photodiode wiht high sensitivity and high stability to UV-light with 100% internal Q.E. and high transmittance on-chip multilayer dielectric stack
Yasumasa Koda, Rihito Kuroda, Yukihisa Nakao, Shigetoshi Sugawa (Tohoku Univ.) SDM2013-92		  [more] SDM2013-92
pp.21-25
SDM 2012-10-26
09:55		 Miyagi Tohoku Univ. (Niche) Low Temperature PECVD of High Quality Silicon Nitride for Gate Spacer
Yukihisa Nakao, Akinobu Teramoto, Rihito Kuroda, Tomoyuki Suwa, Hiroaki Tanaka, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2012-93		  [more] SDM2012-93
pp.21-26
SDM 2012-10-26
10:20		 Miyagi Tohoku Univ. (Niche) [Special Talk] Science-Based New Silicon LSI Technologies: New Technologies for the LSI Performance Improvement Instead of Current Device Miniaturization
Tadahiro Ohmi, Yukihisa Nakao, Rihito Kuroda, Tomoyuki Suwa, Hiroaki Tanaka, Shigetoshi Sugawa (Tohoku Univ.) SDM2012-94		  [more] SDM2012-94
pp.27-32
SDM, ED
(Workshop)		 2012-06-27
14:45		 Okinawa Okinawa Seinen-kaikan 100nm-gate-length Normally-off Accumulation-Mode FD-SOI MOSFETs for Low Noise Analog/RF Circuits
Hidetoshi Utsumi, Ryohei Kasahara, Yukihisa Nakao, Rihito Kuroda, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) 		 [more]
SDM 2010-10-21
17:10		 Miyagi Tohoku University Low Resistance Source/Drain Contacts with Low Schottky Barrier for High Performance Transistors
Hiroaki Tanaka, Rihito Kuroda, Yukihisa Nakao, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) SDM2010-157		  [more] SDM2010-157
pp.25-30
ED, SDM 2010-07-02
15:30		 Tokyo Tokyo Inst. of Tech. Ookayama Campus High Current Drivability FD-SOI CMOS with Low Source/Drain Series Resistance
Yukihisa Nakao, Rihito Kuroda, Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ.) ED2010-119 SDM2010-120		  [more] ED2010-119 SDM2010-120
pp.303-308
SDM 2009-10-29
14:00		 Miyagi Tohoku University High current drivability transistors with optimized silicides for n+- and p+-Si
Yukihisa Nakao, Rihito Kuroda, Hiroaki Tanaka, Akinobu Teramoto, Shigetoshi Sugawa, Tadahiro Ohmi (Tohoku Univ) SDM2009-117		 Formation process of silicide/silicon contact with low contact resistance in the source/drain regions has been developed... [more] SDM2009-117
pp.1-6
 Results 1 - 8 of 8  /   
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